2015
DOI: 10.4028/www.scientific.net/amr.1120-1121.424
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Anomalous Hall Effect of the Co Thin Film Deposited by High-Pressure Magnetron Sputtering

Abstract: In this paper, we studied the dependence of temperature and weak localization (WL) effect on the anomalous Hall effect (AHE) in strong disordered and poorly crystallized metal Co thin film deposited by high-pressure magnetron sputtering. The temperature coefficients of resistivity is positive at high temperatures and becomes negative at low temperatures, which is the typical characteristic of weak localization effect in dirty metal regime due to the strong disorder. The saturation anomalous Hall resistivity (ρ… Show more

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