Anomalous history behavior in stacked PD SOI gates

Ketchen,; Bhushan,

doi:10.1109/soi.2003.1242939

Cited by 1 publication

(1 citation statement)

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“…Motivated by a need for more comprehensive floating-body analysis, we have developed a scheme for measurement, with sub-picosecond precision, of circuit delays that are independently dominated by the pull-up (p-FET) and pull-down (n-FET) characteristics of a single-or multiple-input gate [19][20][21]. Any combination of inputs and number of switching events, arbitrarily configured with respect to timing and sequence, may precede the event to be measured.…”

Section: Test Structures With High-frequency I/osmentioning

confidence: 99%

Product-representative “at speed” test structures for CMOS characterization

Ketchen

Bhushan

2006

IBM J. Res. & Dev.

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The design of product-representative test structures for measuring and characterizing CMOS circuit performance, power, and variability at speeds characteristic of present-day microprocessors is described. The current use of this set of test structures in the IBM partially depleted silicon-on-insulator CMOS technologies covers diagnostics in early process development, monitoring mature processes in manufacturing, enabling model-to-hardware correlation, and tracking product performance. The designs focus on measuring high-frequency performance early in the product fabrication cycle while minimizing test and data analysis time. The physical layouts are compact, facilitating placement in the chip. A subset of these test structures can be measured at the first metal level, while more complex designs use three or more metal layers. Most designs are compatible with standard in-line parametric test equipment, although a limited number of bench tests continue to play an important role. Differential measurement techniques are key to many of the test structure designs. Hardware data analysis also relies heavily on differencing schemes for relating MOSFET parameters and associated parasitic components to circuit delays in a self-consistent manner.

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Section: Test Structures With High-frequency I/osmentioning

confidence: 99%