Anomalous in-plane magnetoresistance of electron-doped cuprate La2−x
                            Ce
                                x
                            CuO4±δ

Yu, Heshan; He, Ge; Jia, Yunfei; Zhang, Xu; Yuan, Jie; Zhu, Bo; Kusmartseva, Anna F.; Kusmartsev, F. V.; Jin, Kui

doi:10.1007/s11433-017-9050-7

Cited by 5 publications

(2 citation statements)

References 40 publications

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“…This rule also applies to samples as a function of Ce doping, e.g., NCCO and PCCO [28,36], in which the p-MR reaches the maximum at optimal Ce doping. For LCCO, the underdoped samples without superconductivity only show n-MR. With increasing Ce doping, p-MR and superconductivity emerge simultaneously as the long-range AF order is destroyed [23,24]. Field and doping, once again, show a resemblance in tuning the MR besides the similarity of jump in Hall number at the AF QCP.…”

Section: E the Relation Between P-mr And Superconductivitymentioning

confidence: 86%

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Quantum criticality tuned by magnetic field in optimally electron-doped cuprate thin films

Zhang

Chen

et al. 2021

Phys. Rev. B

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Antiferromagnetic (AF) spin fluctuations are commonly believed to play a key role in electron pairing of cuprate superconductors. In electron-doped cuprates, it is still in paradox about the interplay among different electronic states in quantum perturbations, especially between superconducting and magnetic states. Here, we report a systematic transport study on cation-optimized La 2−x Ce x CuO 4±δ (x = 0.10) thin films in high magnetic fields. We find an AF quantum phase transition near 60 T, where the Hall number jumps from n H = −x to n H = 1 − x, resembling the change of n H at the AF boundary (x AF = 0.14) tuned by Ce doping. In the AF region a spin dependent state manifesting anomalous positive magnetoresistance is observed, which is closely related to superconductivity. Once the AF state is suppressed by magnetic field, a polarized ferromagnetic state is predicted, reminiscent of the recently reported ferromagnetic state at the quantum endpoint of the superconducting dome by Ce doping. The magnetic field that drives phase transitions in a similar but distinct manner to doping thereby provides a unique perspective to understand the quantum criticality of electron-doped cuprates.

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Section: E the Relation Between P-mr And Superconductivitymentioning

confidence: 86%

“…The n-MR is common in AF state [12,23,24]. In our study, the starting field of n-MR (B max ) is the same as the characteristic field where n H deviates from −0.1 as shown in Fig.…”

Section: Abnormal P-mrmentioning

confidence: 92%

Quantum criticality tuned by magnetic field in optimally electron-doped cuprate thin films

Zhang

Chen

et al. 2021

Phys. Rev. B

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Spin-orbital polarons in electron doped copper oxides

Kusmartseva

Jin

et al. 2018

Journal of Magnetism and Magnetic Materials

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Present work demonstrates the formation of spin-orbital polarons in electron doped copper oxides, that arise due to doping-induced polarisation of the oxygen orbitals in the CuO 2 planes. The concept of such polarons is fundamentally different from previous interpretations. The novel aspect of spin-orbit polarons is best described by electrons becoming self-trapped in one-dimensional channels created by polarisation of the oxygen orbitals. The one-dimensional channels form elongated filaments with two possible orientations, along the diagonals of the elementary CuO 2 square plaquette. As the density of doped electrons increases multiple filaments are formed. These may condense into a single percollating filamentary phase. Alternatively, the filaments may cross perpendicularly to create an interconnected conducting quasi-one-dimensional web. At low electron doping the antiferromagnetic (AFM) state and the polaron web coexist. As the doping is increased the web of filaments modifies and transforms the AFM correlations leading to a series of quantum phase transitions -which affect the normal and superconducting state properties.

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Anisotropic magnetoresistance and planar Hall effect in correlated and topological materials

Zhang

Hong

2021

Journal of Vacuum Science &Amp; Technology A

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This article reviews the recent progress in understanding the anisotropic magnetoresistance (AMR) and the planar Hall effect (PHE) in two classes of quantum materials, the strongly correlated oxides and topological materials. After introducing the phenomenological description, we give a comprehensive survey of the experimental results, including the effects of temperature, magnetic field, strain, chemical doping, and electric field effect tuning. The material systems of interest include single-phase bulk and thin film materials, artificial nanostructures, surfaces and heterointerfaces, as well as superlattices. We focus on the critical information revealed by the AMR and PHE about the complex energy landscape in these emergent materials, elucidating their connection with magnetocrystalline anisotropy, charge correlation, spin-orbit coupling, band topology, and interface coupling.

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Anomalous in-plane magnetoresistance of electron-doped cuprate La2−x Ce x CuO4±δ

Abstract: We report the systematic in-plane magnetoresistance measurements on the electron-doped cuprate La 2-x Ce x CuO 4±δ thin films as a function of doping and oxygen content in the magnetic field up to 14 T.

Cited by 5 publications

References 40 publications

Quantum criticality tuned by magnetic field in optimally electron-doped cuprate thin films

Quantum criticality tuned by magnetic field in optimally electron-doped cuprate thin films

Spin-orbital polarons in electron doped copper oxides

Anisotropic magnetoresistance and planar Hall effect in correlated and topological materials

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