Anomalous luminescence temperature dependence of (In,Ga)(As,Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications
Elisa Maddalena Sala,
Petr Klenovský
Abstract:We study (In,Ga)(As,Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, i.e. increase of energy with temperature increase from 10 K to ∼70 K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from… Show more
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