Anomalous Oxide Charge Variation Identified by Alternating Current Surface Photovoltage Method in Cr-Aqueous-Solution-Rinsed p-Type Si(001) Wafers Exposed to Air

Abstract

Chromium (Cr)-aqueous-solution-rinsed and/or hydrofluoric acid (HF)-solution-dipped p-type silicon (Si) (001) wafer surfaces are investigated by the frequency-dependent alternating current (AC) surface photovoltage (SPV) method. At the Cr(OH)3/p-type Si interface, in principle, a Schottky barrier could not possibly be generated. The Cr ion (Cr3+) is considered to forcibly deprive a p-type Si substrate of electrons during metallization (Cr3++3e-→Cr). Thus, at an early stage of air exposure, a positive fixed oxide charge may be compensated for by electrons, indicating the disappearance of AC SPV. With air exposure time, AC SPV emerges again and increases gradually in a Cr-deposited p-type Si(001) surface. This is because the native oxide between the Cr atom layer and the p-type Si substrate grows with time. As a result, a positive fixed oxide charge exceeds the overall charge state of the Cr-deposited p-type Si surface. Thus, AC SPV appears again and gradually increases with the fixed oxide charge in p-type Si. The saturated value is in a good agreement with that of the HF aqueous-solution-dipped p-type Si surface.