Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

Tunç, Tuncay; Altındal, Ş.; Dökme, İlbilge; Uslu, Habibe

doi:10.1007/s11664-010-1440-9

Cited by 62 publications

(13 citation statements)

References 54 publications

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“…Furthermore, the increase in illumination intensities induced an expansion of molecules, which causes an increase in the electronic polarization to some extend and, hence, an increase in the ε′ and ε″ of the dielectric material. In recent years, similar results have been reported in the literature 32–35…”

Section: Resultssupporting

confidence: 85%

Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni‐doped PVA nanofibers as an interfacial layer

2011

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ABSTRACT:In this study, the Au/poly(vinyl alcohol) (Co, Ni-doped)/n-Si Schottky devices (SDs) were fabricated using n-type single crystal silicon (phosphor-doped). The ohmic and rectifier contacts were thermally formed by annealing them in an evaporating system. Polyvinyl alcohol (PVA)/(Co-Ni) nanofiber film was used as an interfacial layer between metal-semiconductor. After the PVA/(Co-Ni) acetate was obtained, the nanofiber film was fabricated on silicon wafer using electrospinning technique. The dielectric properties of

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Section: Resultssupporting

confidence: 85%

Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni‐doped PVA nanofibers as an interfacial layer

2011

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“…Herein, poly (vinyl alcohol) (PVA) is a water-soluble polymeric material that has interesting optical properties [ 14 ]. It exhibits good thermal and chemical stability, relatively high dielectric strength, is hydrophilic and nontoxic, and has sufficient storage capacity and dopants (DPs)-dependent optical and electrical properties [ 15 , 16 , 17 , 18 ]. It is of great importance to improve several properties in terms of structure, electrical, and chemical properties.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of PVA/CeO2 Based Nanocomposites with Tuned Refractive Index and Reduced Absorption Edge: Structural and Optical Studies

et al. 2021

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In the current study, polymer nanocomposites (NCPs) based on poly (vinyl alcohol) (PVA) with altered refractive index and absorption edge were synthesized by means of a solution cast technique. The characterization techniques of UV–Vis spectroscopy and XRD were used to inspect the structural and optical properties of the prepared films. The XRD patterns of the doped samples have shown clear amendments in the structural properties of the PVA host polymer. Various optical parameters were studied to get more insights about the influence of CeO2 on optical properties of PVA. On the insertion of CeO2 nanoparticles (NPs) into the PVA matrix, the absorption edge was found to move to reduced photon energy sides. It was concluded that the CeO2 nanoparticles can be used to tune the refractive index (n) of the host polymer, and it reached up to 1.93 for 7 wt.% of CeO2 content. A detailed study of the bandgap (BG) was conducted using two approaches. The outcomes have confirmed the impact of the nanofiller on the BG reduction of the host polymer. The results of the optical BG study highlighted that it is crucial to address the ɛ” parameter during the BG analysis, and it is considered as a useful tool to specify the type of electronic transitions. Finally, the dispersion region of n is conferred in terms of the Wemple–DiDomenico single oscillator model.

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“…The electrical characteristics of fabricated Au/PVA (x‐doped)/n‐Si SBDs as a function of temperature or illumination/radiation were reported separately in our previous studies 4–13. In this study, however, the effect of temperature, illumination, and radiation on the structural parameters of Au/PVA (Co, Zn‐doped)/n‐Si comparatively analyzed with synthesize the previous studies in the aggregate of the external parameters.…”

Section: Introductionmentioning

confidence: 81%

The effects of temperature, radiation, and illumination on current–voltage characteristics of Au/PVA(Co, Zn‐doped)/n‐Si Schottky diodes

Dökme

Altındal

Uslu

2012

J of Applied Polymer Sci

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Polyvinyl alcohol (PVA)/(Co‐Ni) nanofiber film was fabricated on silicon wafer using electrospinning technique. The topography of the produced PVA/(Co‐Ni) nanofiber film was examined by scanning electron microscopy (SEM). The Au/Poly (vinyl alcohol) (Co, Ni‐doped)/n‐Si Schottky diode (SD) was thermally formed in evaporating system after the spinning process. At first, the current–voltage (I–V) characteristics of Au/PVA (Co, Zn‐doped)/n‐Si SD was measured at the room temperature (300 K). For the investigating the effect of temperature, illumination and radiation on Au/PVA (Co, Zn‐doped)/n‐Si SD comparatively, the measurement was performed under the illumination intensity of 200 W, at 380K, and finally the radiation dose of 22 kGy respectively. The diode characteristics such as the zero‐bias barrier height (ϕBo), ideality factor (n) and series resistance (Rs) were calculated at room temperature and under the condition of high temperature, illumination, and radiation. It was found that these characteristics were affected by the illumination and radiation as well as the temperature. The density of interface states (Nss) distribution profiles as a function of (Ec ‐ Ess) extracted from the forward I–V measurements were also affected by illumination and radiation even if just a bit. © 2012 Wiley Periodicals, Inc. J Appl Polym Sci, 2012

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Anomalous Peak in the Forward-Bias C–V Plot and Temperature-Dependent Behavior of Au/PVA (Ni,Zn-doped)/n-Si(111) Structures

Cited by 62 publications

References 54 publications

Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni‐doped PVA nanofibers as an interfacial layer

Illumination intensity effects on the dielectric properties of schottky devices with Co, Ni‐doped PVA nanofibers as an interfacial layer

Synthesis of PVA/CeO2 Based Nanocomposites with Tuned Refractive Index and Reduced Absorption Edge: Structural and Optical Studies

The effects of temperature, radiation, and illumination on current–voltage characteristics of Au/PVA(Co, Zn‐doped)/n‐Si Schottky diodes

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