Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires

Johannes, Andreas; Noack, Stefan; Wesch, W.; Glaser, Markus; Lugstein, Alois; Ronning, Carsten

doi:10.1021/acs.nanolett.5b00431

Cited by 22 publications

(26 citation statements)

References 42 publications

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“…1(b) and in the back of Fig. 1(d), as shown in previous studies-albeit mainly at ion energies from 100 keV to a few MeV-with various ion species, energies and target materials [27][28][29].…”

Section: Methodssupporting

confidence: 65%

Morphology modification of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

Heinig

Möller

et al. 2019

Semicond. Sci. Technol.

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Si nanopillars of less than 50 nm diameter have been irradiated in a helium ion microscope with a focused Ne + beam. The morphological changes due to ion beam irradiation at room temperature and elevated temperatures have been studied with the transmission electron microscope. We found that the shape changes of the nanopillars depend on irradiation-induced amorphization and thermally driven dynamic annealing.While at room temperature, the nanopillars evolve to a conical shape due to ioninduced plastic deformation and viscous flow of amorphized Si, simultaneous dynamic annealing during the irradiation at elevated temperatures prevents amorphization which is necessary for the viscous flow. Above the critical temperature of ion-induced amorphization, a steady decrease of the diameter was observed as a result of the dominating forward sputtering process through the nanopillar sidewalls. Under these conditions the nanopillars can be thinned down to a diameter of ∼10 nm in a wellcontrolled manner. A deeper understanding of the pillar thinning process has been achieved by a comparison of experimental results with 3D computer simulations based on the binary collision approximation.

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Section: Methodssupporting

confidence: 65%

Morphology modification of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

Heinig

Möller

et al. 2019

Semicond. Sci. Technol.

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“…Full amorphization and a significant shortening as well as a change of the NW cross-section from hexagonal to circular was observed due to plastic deformation of NWs during ion implantation. 13 Remarkably, the SiO 2 shell was found to persist during implantation with little intermixing at the interface to the Si core (see Supporting Information 1). Finally the phase separation and actual formation of NW heterostructures by liquid phase epitaxy (LPE) 14 was induced by a 3 min preheating at 600 °C and subsequent 20 ms FLA, whereby the SiO 2 shell stabilized the molten core of the NWs.…”

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confidence: 97%

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

et al. 2016

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In this letter, we demonstrate the formation of unique Ga/GaAs/Si nanowire heterostructures, which were successfully implemented in nanoscale light-emitting devices with visible room temperature electroluminescence. Based on our recent approach for the integration of InAs/Si heterostructures into Si nanowires by ion implantation and flash lamp annealing, we developed a routine that has proven to be suitable for the monolithic integration of GaAs nanocrystallite segments into the core of silicon nanowires. The formation of a Ga segment adjacent to longer GaAs nanocrystallites resulted in Schottky-diode-like I/V characteristics with distinct electroluminescence originating from the GaAs nanocrystallite for the nanowire device operated in the reverse breakdown regime. The observed electroluminescence was ascribed to radiative band-to-band recombinations resulting in distinct emission peaks and a low contribution due to intraband transition, which were also observed under forward bias. Simulations of the obtained nanowire heterostructure confirmed the proposed impact ionization process responsible for hot carrier luminescence. This approach may enable a new route for on-chip photonic devices used for light emission or detection purposes.

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“…Most probably, the islands are formed at places where few of the nanostructures connect together and Ge is transported to the surface of the nanostructures due to anomalous plastic deformation in the amorphous phase. A similar effect was observed in ion-irradiated Si nanowires (NWs) at room temperature [21]. The plastic deformation of Si NWs is suppressed by increasing the sample temperature above 350 • C, which was the threshold temperature for avoiding NW amorphization during the implantation process.…”

Section: Materials 2020 13 X For Peer Review 4 Of 10mentioning

confidence: 56%

Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

et al. 2020

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Controlled doping with an effective carrier concentration higher than 1020 cm−3 is a key challenge for the full integration of Ge into silicon-based technology. Such a highly doped layer of both p- and n type is needed to provide ohmic contacts with low specific resistance. We have studied the effect of ion implantation parameters i.e., ion energy, fluence, ion type, and protective layer on the effective concentration of electrons. We have shown that the maximum electron concentration increases as the thickness of the doping layer decreases. The degradation of the implanted Ge surface can be minimized by performing ion implantation at temperatures that are below −100 °C with ion flux less than 60 nAcm−2 and maximum ion energy less than 120 keV. The implanted layers are flash-lamp annealed for 20 ms in order to inhibit the diffusion of the implanted ions during the recrystallization process.

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Anomalous Plastic Deformation and Sputtering of Ion Irradiated Silicon Nanowires

Cited by 22 publications

References 42 publications

Morphology modification of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

Morphology modification of Si nanopillars under ion irradiation at elevated temperatures: plastic deformation and controlled thinning to 10 nm

Synthesis, Morphological, and Electro-optical Characterizations of Metal/Semiconductor Nanowire Heterostructures

Electron Concentration Limit in Ge Doped by Ion Implantation and Flash Lamp Annealing

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