Anomalous resistive switching phenomenon

Mojarad, Shahin A.; Goss, Jonathan P.; Kwa, Kelvin S. K.; Petrov, Peter K.; Zou, Bin; Alford, Neil McN.; O'Neill, AG

doi:10.1063/1.4770489

Cited by 17 publications

(6 citation statements)

References 33 publications

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“…On the contrary, symmetric systems presenting two similar metal/oxide memristive active interfaces in series were reported to display HSLs with the so-called "table with legs" (TWL) shape [9,16]. In these cases, the two interfaces behave in a complementary way [17][18][19]: when one switches from low resistance (LR) to high resistance (HR), the other switches inversely. Symmetric Pt/TiO 2 /Pt devices stimulated with symmetric stimuli displayed complex I-V curves with multiple transitions, which was interpreted as bipolar switching taking place simultaneously at both Pt/TiO interfaces [20].…”

Section: Introductionmentioning

confidence: 99%

Selective activation of memristive interfaces in TaO_x-based devices by controlling oxygen vacancies dynamics at the nanoscale

Ferreyra

Sánchez²,

Aguirre³

et al. 2020

Nanotechnology

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The development of novel devices for neuromorphic computing and non-traditional logic operations largely relies on the fabrication of well controlled memristive systems with functionalities beyond standard bipolar behavior and digital ON-OFF states. In the present work we demonstrate for Ta O-based devices that it is possible to selectively activate/deactivate two series memristive interfaces in order to obtain clockwise or counterclockwise multilevel squared remanent resistance loops, just by controlling both the electroforming process and the (a)symmetry of the applied stimuli, and independently of the nature of the used metallic electrodes. Based on our thorough characterization, analysis and modeling, we show that the physical origin of this electrical behavior relies on controlled oxygen vacancies electromigration between three different nanoscopic zones of the active Ta 2 O 5−x layer: a central one and two quasi-symmetric interfaces with reduced TaO 2−h(y) layers. Our devices fabrication process is rather simple as it implies the room temperature deposition of only one CMOS compatible oxide-Ta-oxide-and one metal, suggesting that it might be possible to take advantage of these properties at low cost and with easy scability. The tunable opposite remanent resistance loops circulations with multiple-analogic-intermediate stable states allows mimicking the adaptable synaptic weight of biological systems and presents potential for non-standard logic devices.

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Section: Introductionmentioning

confidence: 99%

Selective activation of memristive interfaces in TaO_x-based devices by controlling oxygen vacancies dynamics at the nanoscale

Ferreyra

Sánchez²,

Aguirre³

et al. 2020

Nanotechnology

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“…In agreement with other reports, we previously described the switching behavior and the electronic conduction in SrTiO 3−x through band transport and tunnelling through a Schottky barrier. 6,16,17,30−33 In contrast, other groups found indications for trap-assisted tunnelling or (small polaron) hopping mechanisms 34,35 (for example, at very low 36 or very high 37 complicate the scenario, the coexistence of both mechanisms was suggested theoretically 38,39 and experimentally. 40−42 Given the multitude of contradicting models used to describe this material, a direct experimental characterization of the electronic structure of the conductive filament is mandatory.…”

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confidence: 99%

In-Gap States and Band-Like Transport in Memristive Devices

et al. 2018

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Point defects such as oxygen vacancies cause emergent phenomena such as resistive switching in transition-metal oxides, but their influence on the electron-transport properties is far from being understood. Here, we employ direct mapping of the electronic structure of a memristive device by spectromicroscopy. We find that oxygen vacancies result in in-gap states that we use as input for single-band transport simulations. Because the in-gap states are situated below the Fermi level, they do not contribute to the current directly but impact the shape of the conduction band. Accordingly, we can describe our devices with band-like transport and tunneling across the Schottky barrier at the interface.

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“…6(b) . The emergence of CRS was originally suggested for the two anti-parallel connected electrochemical metallization cells 68 , but such behavior has recently been reported in several single layer oxides 69 70 . Discussions on the emergence of CRS in this material system will be provided later.…”

Section: Resultsmentioning

confidence: 97%

Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases

Lee

Yoo

Yoon

et al. 2016

Sci Rep

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Identification of microstructural evolution of nanoscale conducting phase, such as conducting filament (CF), in many resistance switching (RS) devices is a crucial factor to unambiguously understand the electrical behaviours of the RS-based electronic devices. Among the diverse RS material systems, oxide-based redox system comprises the major category of these intriguing electronic devices, where the local, along both lateral and vertical directions of thin films, changes in oxygen chemistry has been suggested to be the main RS mechanism. However, there are systems which involve distinctive crystallographic phases as CF; the Magnéli phase in TiO2 is one of the very well-known examples. The current research reports the possible presence of distinctive local conducting phase in atomic layer deposited SrTiO3 RS thin film. The conducting phase was identified through extensive transmission electron microscopy studies, which indicated that oxygen-deficient Sr2Ti6O13 or Sr1Ti11O20 phase was presumably present mainly along the grain boundaries of SrTiO3 after the unipolar set switching in Pt/TiN/SrTiO3/Pt structure. A detailed electrical characterization revealed that the samples showed typical bipolar and complementary RS after the memory cell was unipolar reset.

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Anomalous resistive switching phenomenon

Cited by 17 publications

References 33 publications

Selective activation of memristive interfaces in TaO_x-based devices by controlling oxygen vacancies dynamics at the nanoscale

Selective activation of memristive interfaces in TaO_x-based devices by controlling oxygen vacancies dynamics at the nanoscale

In-Gap States and Band-Like Transport in Memristive Devices

Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases

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Anomalous resistive switching phenomenon

Cited by 17 publications

References 33 publications

Selective activation of memristive interfaces in TaO x -based devices by controlling oxygen vacancies dynamics at the nanoscale

Selective activation of memristive interfaces in TaO x -based devices by controlling oxygen vacancies dynamics at the nanoscale

In-Gap States and Band-Like Transport in Memristive Devices

Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases

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Selective activation of memristive interfaces in TaO_x-based devices by controlling oxygen vacancies dynamics at the nanoscale

Selective activation of memristive interfaces in TaO_x-based devices by controlling oxygen vacancies dynamics at the nanoscale