2001
DOI: 10.1016/s0921-4526(01)00939-5
|View full text |Cite
|
Sign up to set email alerts
|

Anomalous temperature dependence of electroluminescence intensity in InGaN single quantum well diodes

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
5
0

Year Published

2002
2002
2014
2014

Publication Types

Select...
5

Relationship

2
3

Authors

Journals

citations
Cited by 5 publications
(5 citation statements)
references
References 9 publications
0
5
0
Order By: Relevance
“…However, with further decrease of temperature down to 15 K, significant reduction of the EL intensity is observed. 11,12 That is, it is found that the EL efficiency at lower temperatures ͑15-80 K͒ is unexpectedly decreased from the maximum value around 140 K. In Fig. 2͑b͒, a similar plot of EL spectra for the blue SQW diode is shown.…”
Section: Resultsmentioning
confidence: 64%
See 1 more Smart Citation
“…However, with further decrease of temperature down to 15 K, significant reduction of the EL intensity is observed. 11,12 That is, it is found that the EL efficiency at lower temperatures ͑15-80 K͒ is unexpectedly decreased from the maximum value around 140 K. In Fig. 2͑b͒, a similar plot of EL spectra for the blue SQW diode is shown.…”
Section: Resultsmentioning
confidence: 64%
“…For investigating causes of the reduced EL efficiency at lower temperatures, the detailed EL spectral line shape has been studied as a function of injection current. 12 The results at 20, 140, and 260 K are shown in Figs. 5͑a͒ and 5͑b͒ for the green and blue diodes, respectively.…”
Section: B Injection Current Dependence Of El Spectramentioning
confidence: 99%
“…Optical measurements of electroluminescence (EL) and cathodoluminescence (CL) provide an interesting experimental approach in order to clarify some aspects of the previous problem [4][5][6][7][8]. In this framework, our aim is to exploit the combination of these techniques to gain by complementary information a deeper insight into the injection/recombination mechanisms.…”
Section: Introductionmentioning
confidence: 99%
“…At 300 K the green SQW-LED shows an emission band centered around 2.3 eV (540 nm) at the current level of 10 mA with multiple fine structures due to Fabry-Perot fringes. The emission peak shows a blue-shift with increasing the injection current (from 0.1 to 10 mA) due to the band-filling effect on the excitonic localized recombination centers at 300 K [10]. The EL spectral intensity from the green SQW layer varies significantly with changing the sample temperature.…”
mentioning
confidence: 99%
“…Previous spectroscopic studies by photoluminescence (PL), electroluminescence (EL), reflectance, and photoabsorption spectral measurements suggest that quantum confinement effects on the InGaN alloy well with spatially inhomogeneous In distributions play an important role for the superior luminous efficiency. Especially, it is believed that efficient carrier capturing processes by the localized radiative recombination centers within quantum-dot-like regions are crucial for the origins of the high emission efficiency [8][9][10]. In this paper, temperature and injection current dependence of EL spectral intensity of the InGaN single-quantum-well (SQW) LEDs with high recombination efficiency, have been carefully studied over a wide temperature range and as a function of injection current.…”
mentioning
confidence: 99%