Anomalous temperature dependence of photoluminescence spectra from InAs/GaAs quantum dots grown by formation–dissolution–regrowth method

Abstract

Two kinds of InAs/GaAs quantum dot (QD) structures are grown by molecular beam epitaxy in formationdissolution-regrowth method with different in-situ annealing and regrowth processes. The densities and sizes of quantum dots are different for the two samples. The variation tendencies of PL peak energy, integrated intensity, and full width at half maximum versus temperature for the two samples are analyzed, respectively. We find the anomalous temperature dependence of the InAs/GaAs quantum dots and compare it with other previous reports. We propose a new energy band model to explain the phenomenon. We obtain the activation energy of the carrier through the linear fitting of the Arrhenius curve in a high temperature range. It is found that the GaAs barrier layer is the major quenching channel if there is no defect in the material. Otherwise, the defects become the major quenching channel when some defects exist around the QDs.

InP quantum dots-based electroluminescent devices*

“…The growing demand for non-toxic and eco-friendly QDs has greatly stimulated the enthusiasm of researchers. [12][13][14][15][16] InP is of great importance as a potential substitute for toxic Cd-based and lead perovskite QDs due to its lower toxicity and similar optical properties. [17][18][19][20][21] Recently, remarkable improvements have been made with the synthesis of core-shell-type InP QDs, where the highest photoluminescence quantum yield (PLQY) of 90% for green with FWHM of 35 nm and 95% for red with FWHM of 42 nm was achieved by the core-shell-type InP QDs.…”