Anomalous temperature dependence of photoluminescence from stoichiometric GD2O3−x film

Zhou, Jianping; Chai, Chuan; Yang, Shaoyan; Liu, Zhikai; Song, S.C.; Chen, Nuofu

doi:10.1016/j.jcrysgro.2003.08.014

Cited by 7 publications

(4 citation statements)

References 27 publications

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“…30 eV higher. The former displayed the characteristic shape of a spin−orbit doublet, and their BEs [BE(Gd 4d 5/2 ) = 142.1 eV; BE(Gd 4d 3/2 ) = 147.5 eV] and spacing (Δ = 5.4 eV) were in agreement with some previous works on Gd 2 O 3 , ,, despite the fact that higher BE values for Gd(III) oxide have also been reported. ,,, The satellite peak at BE = 170.3 eV was suggested to arise from exchange interactions …”

Section: Resultssupporting

confidence: 88%

“…In fact, for both Gd 2 O 3 and Dy 2 O 3 samples, the O1s band shape was characterized by two main components, highlighted in Figure for the sake of clarity. The most intense contribution, centered at BE = 531.7 eV, was attributed to the presence of −OH groups and carbonates/bicarbonates, due to the high reactivity of lanthanides toward CO 2 and H 2 O arising from atmospheric exposure. ,,,,, The presence of carbonate species was indeed confirmed by a high BE shoulder centered at 288.4 eV in the C1s peak. ,, Appreciable amounts of hydroxide and carbonate functionalities have indeed been previously observed for both Gd 2 O 3 and Dy 2 O 3 thin films deposited by different methods (MOCVD, e-beam evaporation). ,,,, The minor O 1s component at BE = 529.1 eV was related to oxygen in Gd(Dy) 2 O 3 , despite the fact that the pertaining literature is rather ambiguous on lattice oxygen BEs. − ,,,,,− …”

Section: Resultsmentioning

confidence: 55%

“…In the case of the Gd 4d photopeak, a complex multiplet structure was observed, arising from electrostatic interactions between the 4d hole and 4f electrons. − Indeed, the overall photopeak was composed by an intense signal centered at a BE value of ca. 145 eV and a weaker satellite located ca.…”

Section: Resultsmentioning

confidence: 99%

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Lanthanide Oxide Thin Films by Metalorganic Chemical Vapor Deposition Employing Volatile Guanidinate Precursors

et al. 2009

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The application of two novel metalorganic complexes, namely the isostructural tris(N,N’-diisopropyl-2-dimethlyamido-guanidinato)gadolinium(III) (1) and tris(N,N’-diisopropyl-2-dimethlyamido-guanidinato)dysprosium(III) (2) as precursors for metalorganic chemical vapor deposition (MOCVD) of Gd2O3 and Dy2O3 is discussed. On the basis of the detailed thermal gravimetric analysis (TGA) and isothermal TGA studies, both the precursors are very volatile and able to deliver continuous mass transport into the gas phase. The extraordinary thermal stability of the precursors was revealed by nulcear magnetic resonance (NMR) decomposition studies. Depositions were carried out in the presence of oxygen at reduced pressure and varying the substrate temperature in the range 300−700 °C. Uniform films with reproducible quality were deposited on Si(100) and Al2O3(0001) substrates over the entire temperature range. Employing a multitechnique approach (XRD, SEM, AFM, EDX, XPS, RBS, SNMS, C−V), variations of the growth characteristics and film properties with deposition temperature are studied in terms of crystallinity, structure, surface roughness, composition, and electrical properties.

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Section: Resultssupporting

confidence: 88%

Section: Resultsmentioning

confidence: 55%

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Lanthanide Oxide Thin Films by Metalorganic Chemical Vapor Deposition Employing Volatile Guanidinate Precursors

et al. 2009

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“…In general, the PL intensity decreases with increasing temperature due to a reduction of excitonic transitions with temperature. The characteristic exhibited by the integrated intensity of the PL peak-a maximum at some measurement temperatures-has also appeared in other materials, such as porous silicon [16] , a-C:H film [17] , silicon nanocrystals in SiO 2 [18] and stoichiometric Gd 2 O 3−x film [19] . In this article, the integrated intensity of the peaks increases at first, reaches its maximum at about 50 K, and finally starts to diminish gradually.…”

Section: -2mentioning

confidence: 80%

Synthesis of ZnS whiskers and their photoluminescence properties

Du¹,

Wang²,

Li³

2009

J. Semicond.

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ZnS whiskers were successfully synthesized by the chemical vapor deposition method with the assistance of CuS micro-spheres. The composition, morphology and structure of the samples were characterized by X-ray diffraction, X-ray energy dispersive spectroscopy, scanning electron microscopy, and the temperature-dependent photoluminescence (PL) spectrum over a temperature range from 10 to 250 K was studied. The results show that the as-synthesized ZnS whiskers have an average length of 0.3 mm and diameter of 2.5 μm with a cubic zinc-blende structure. There exist three emission bands in the blue, green and yellow regions, and the emission mechanism is discussed. As the temperature increases, the temperature-dependent PL spectrum shows anomalous behavior, where distinct inverted V-shaped characters of blue and green emission integrated intensity and an inconspicuous S-shape of blue emission peak energy are observed. The transition mechanism is discussed.

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Atomic Layer Deposition of Gadolinium Oxide Films

Kukli

Hatanpää

Ritala

et al. 2007

Chemical Vapor Deposition

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Thin cubic Gd 2 O 3 films are grown by atomic layer deposition (ALD), in the temperature range 300-400°C, using a novel tris(2,3-dimethyl-2-butoxy)gadolinium(III) precursor, Gd[OC(CH 3 ) 2 CH(CH 3 ) 2 ] 3 , and water. The films are crystalline in their as-deposited state. The films contain some residual hydrogen and carbon, and are probably oxygen-deficient in the as-deposited state, causing flat-band shifts in Gd 2 O 3 -based metal-oxide-semiconductor (MOS) capacitor structures. On the other hand, the permittivity of Gd 2 O 3 dielectric layers reaches 16, approximately, when calculated from the relationship between equivalent and physical oxide thicknesses, and breakdown fields as high as 8 MV cm -1 .

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Anomalous temperature dependence of photoluminescence from stoichiometric GD2O3−x film

Cited by 7 publications

References 27 publications

Lanthanide Oxide Thin Films by Metalorganic Chemical Vapor Deposition Employing Volatile Guanidinate Precursors

Lanthanide Oxide Thin Films by Metalorganic Chemical Vapor Deposition Employing Volatile Guanidinate Precursors

Synthesis of ZnS whiskers and their photoluminescence properties

Atomic Layer Deposition of Gadolinium Oxide Films

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