Anomalous temperature dependence of series resistance in Ag\Si and Al\Si Schottky junctions

Horváth, Zs. J.; Ádám, M.; Pintér, István; Cvikl, B.; Korošak, Dean; Mrdjen, T; Tuyen, Vo Van; Makaró, Zs; Dücső, Csaba; Bársony, I.

doi:10.1016/s0042-207x(98)00076-1

Cited by 14 publications

(3 citation statements)

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“…The decrease in series resistance with an increasing temperature is usual behavior for semiconductors. Such temperature dependence of R s is an obvious agreement with the reported negative temperature coefficient of the R s 29, 30. However, the detail of the effect of radiation and the illumination on electrical characteristics of these devices is unclear.…”

Section: Resultssupporting

confidence: 87%

The effects of temperature, radiation, and illumination on current–voltage characteristics of Au/PVA(Co, Zn‐doped)/n‐Si Schottky diodes

Dökme

Altındal

Uslu

2012

J of Applied Polymer Sci

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Polyvinyl alcohol (PVA)/(Co‐Ni) nanofiber film was fabricated on silicon wafer using electrospinning technique. The topography of the produced PVA/(Co‐Ni) nanofiber film was examined by scanning electron microscopy (SEM). The Au/Poly (vinyl alcohol) (Co, Ni‐doped)/n‐Si Schottky diode (SD) was thermally formed in evaporating system after the spinning process. At first, the current–voltage (I–V) characteristics of Au/PVA (Co, Zn‐doped)/n‐Si SD was measured at the room temperature (300 K). For the investigating the effect of temperature, illumination and radiation on Au/PVA (Co, Zn‐doped)/n‐Si SD comparatively, the measurement was performed under the illumination intensity of 200 W, at 380K, and finally the radiation dose of 22 kGy respectively. The diode characteristics such as the zero‐bias barrier height (ϕBo), ideality factor (n) and series resistance (Rs) were calculated at room temperature and under the condition of high temperature, illumination, and radiation. It was found that these characteristics were affected by the illumination and radiation as well as the temperature. The density of interface states (Nss) distribution profiles as a function of (Ec ‐ Ess) extracted from the forward I–V measurements were also affected by illumination and radiation even if just a bit. © 2012 Wiley Periodicals, Inc. J Appl Polym Sci, 2012

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Section: Resultssupporting

confidence: 87%

The effects of temperature, radiation, and illumination on current–voltage characteristics of Au/PVA(Co, Zn‐doped)/n‐Si Schottky diodes

Dökme

Altındal

Uslu

2012

J of Applied Polymer Sci

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“…Such enhanced broadband absorbance would result in the Au NPs converting most of the incident white light to heat, accompanied by a significant increase in the global temperature. Moreover, we also casted the composite films onto thermally sensitive Schottky diodes, − as displayed in Figure b. The SiO 2 layer was used as a passivation layer and also enhanced the affinity between the polymer matrix and the metal electrode.…”

Section: Resultsmentioning

confidence: 99%

“…In other words, almost all of the incident photons would have been trapped in the composite film to increase the global temperature rather than reach the Al–Si interface to generate electron/hole pairs. On the other hand, temperature-dependent I – V curves of metal/semiconductor Schottky diodes have been reported from a few studies. − ,− For example, the Al/Si Schottky diode displays a nearly linear increase in reverse current at a constant reverse bias with respect to temperature (Figure S13), presumably because more carriers with sufficient energy are collected to the opposite electrodes upon increase of the temperature, thereby contributing to the measured current. Therefore, we suspected that the enhancement in reverse current of the integrating system under illumination arose predominantly from the elevated temperature at the interface, rather than from the light-induced generation of electron/hole pairs.…”

Section: Resultsmentioning

confidence: 99%

White-Light-Induced Collective Heating of Gold Nanocomposite/Bombyx mori Silk Thin Films with Ultrahigh Broadband Absorbance

et al. 2015

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This paper describes a systematic investigation of the phenomenon of white-light-induced heating in silk fibroin films embedded with gold nanoparticles (Au NPs). The Au NPs functioned to develop an ultrahigh broadband absorber, allowing white light to be used as a source for photothermal generation. With an increase of the Au content in the composite films, the absorbance was enhanced significantly around the localized surface plasmon resonance (LSPR) wavelength, while non-LSPR wavelengths were also increased dramatically. The greater amount of absorbed light increased the rate of photoheating. The optimized composite film exhibited ultrahigh absorbances of approximately 95% over the spectral range from 350 to 750 nm, with moderate absorbances (>60%) at longer wavelengths (750–1000 nm). As a result, the composite film absorbed almost all of the incident light and, accordingly, converted this optical energy to local heat. Therefore, significant temperature increases (ca. 100 °C) were readily obtained when we irradiated the composite film under a light-emitting diode or halogen lamp. Moreover, such composite films displayed linear light-to-heat responses with respect to the light intensity, as well as great photothermal stability. A broadband absorptive film coated on a simple Al/Si Schottky diode displayed a linear, significant, stable photo-thermo-electronic effect in response to varying the light intensity.

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On thermal and optical sensor applications of chitosan molecule in the Co/Chitosan/p-Si hybrid heterojunction design

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Aydoğan

İncekara

et al. 2021

J Mater Sci: Mater Electron

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Anomalous temperature dependence of series resistance in Ag\Si and Al\Si Schottky junctions

Cited by 14 publications

References 3 publications

The effects of temperature, radiation, and illumination on current–voltage characteristics of Au/PVA(Co, Zn‐doped)/n‐Si Schottky diodes

The effects of temperature, radiation, and illumination on current–voltage characteristics of Au/PVA(Co, Zn‐doped)/n‐Si Schottky diodes

White-Light-Induced Collective Heating of Gold Nanocomposite/Bombyx mori Silk Thin Films with Ultrahigh Broadband Absorbance

On thermal and optical sensor applications of chitosan molecule in the Co/Chitosan/p-Si hybrid heterojunction design

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