Anomalous temperature dependence of the Hall mobility in undoped bulk GaAs

Siegel, W.; Schulte, Stefan; Reichel, Christian; Kühnel, G.; Monecke, J.

doi:10.1063/1.365747

Cited by 10 publications

(8 citation statements)

References 11 publications

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“…Carrier transport phenomena also depend on the material homogeneity, therefore the peculiarities of these phenomena can give information related to the material homogeneity [8][9]. It is especially important to analyse the limit up to which a random distribution of defects does not influence the free carrier transport character, and when the overlap of the space charge regions causes the appearance of percolation phenomena [10].…”

Section: Introductionmentioning

confidence: 99%

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Neutron irradiation influence on mobility and compensation of dark conductivity in silicon

Mekys¹,

Rumbauskas²,

Storasta³

2016

Lith. J. Phys.

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The electrical properties of the neutron irradiated Si were analysed by means of the Hall effect and magnetoresistance temperature dependence. It was demonstrated that the electron mobility decreased with increasing the neutron fluence in a wide fluence range, and the microinhomogeneities in samples caused differences between the mobility values from the measured Hall and magnetoresistance effects. Exploiting the magnetoresistance mobility temperature dependence, the free carrier concentration dependence on temperature was analysed. It was found that the neutron irradiation introduced deep levels in the upper part of the bandgap, but their contribution decreased with increasing the neutron fluence – that is explained by more effective generation of acceptor type levels in the middle or lower part of the bandgap. The activation energy of the free carrier concentration did not follow the homogeneous semiconductor model, so the dark conductivity origin, that is related to the modified cluster model and cluster environment, was proposed.

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Section: Introductionmentioning

confidence: 99%

“…Hall effect measurement scheme: sample (1); electrometer Keithley 6514 (2); source meter Keithley 6430 (3); magnet source (4, brown online); thermo resistance meter Agilent 34401A (5, brown); heater source TTi QL564P (6, brown); computer (7); magnet (8); cryostat(9).…”

mentioning

confidence: 99%

Neutron irradiation influence on mobility and compensation of dark conductivity in silicon

Mekys¹,

Rumbauskas²,

Storasta³

2016

Lith. J. Phys.

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“…This dependence is characterized by a minimum of µ H (<2000 cm 2 V −1 s −1 ) at n ≈ 1 × 10 10 cm −3 as well as by maxima of µ H (>6000 cm 2 V −1 s −1 ) at about n = 2 × 10 7 cm −3 and n = 3 × 10 11 cm −3 . Moreover, 'low-mobility' samples show an anomalous temperature dependence of the Hall mobility [3]. The µ H (n) dependence is not a real one of the Hall mobility on the carrier concentration, respectively on the Fermi level, but is due to cellular-structure-related mesoscopic non-uniformities of the resistivity whose strength is correlated to the integral carrier concentration n of a sample.…”

Section: Introductionmentioning

confidence: 98%

Parameters of mesoscopic non-uniformities and their influence on the Hall mobility in undoped high-resistivity LEC GaAs

Siegel

Schulte

Kretzer

et al. 1999

Semicond. Sci. Technol.

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The Hall mobility in undoped high-resistivity GaAs grown by the liquid encapsulation Czochralski technique is strongly reduced due to mesoscopic electrical non-uniformities related to the cellular structure of dislocations. According to model calculations using effective medium theory and approximating the non-uniformities by a mixture of two different phases (cell walls and cell interiors) the most essential inhomogeneity parameters are the ratio of the carrier concentrations and the ratio of the volumes of both phases. Comparing the calculated dependences of the Hall mobility on the carrier concentration and on the temperature with experimental results the different influences of both parameters could be separated.

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“…The main difference between the Hall and MR effects appears if the sample is non-uniform. Many papers have demonstrated a complicated character of the Hall effects in inhomogeneous materials [4][5][6][7] that hid the true change of the Hall mobility. Preliminary investigations have already presented how the irradiation with fast neutrons changes Hall and MR effects in silicon [7], but as they were performed in the samples with the extended defects, the methods have to be compared in homogeneous samples.…”

Section: Introductionmentioning

confidence: 99%

Hall and magnetoresistance measurements in fast electron irradiated silicon

Mekys¹,

Rumbauskas²,

Storasta³

et al. 2014

Lith. J. Phys.

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A set of n-type silicon samples has been irradiated by 6.6 MeV electrons with doses from 1 to 5 (× 10 16) e/cm 2 , and temperature dependences of Hall and magnetoresistance mobilities were measured. The ratio of magnetoresistance and Hall mobilities was found equal to 1.15 ± 0.25. The correspondence of the data measured by both methods opened the possibility of measurement of electron mobility in semiconductors with microinhomogeneities by magnetoresistance effect investigation.

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Anomalous temperature dependence of the Hall mobility in undoped bulk GaAs

Abstract: Hall mobility lowering in undoped n -type bulk GaAs due to cellular-structure related nonuniformities

Cited by 10 publications

References 11 publications

Neutron irradiation influence on mobility and compensation of dark conductivity in silicon

Neutron irradiation influence on mobility and compensation of dark conductivity in silicon

Parameters of mesoscopic non-uniformities and their influence on the Hall mobility in undoped high-resistivity LEC GaAs

Hall and magnetoresistance measurements in fast electron irradiated silicon

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