Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy

Ng, Tien Khee; Yoon, Soon Fatt; Loke, Wan Khai; Wicaksono, Satrio

doi:10.1016/j.jcrysgro.2004.07.002

Cited by 3 publications

(3 citation statements)

References 36 publications

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“…The change of the band gap energy between 300 K and 10 K decreases from about 113 meV in ZnSe to about 93 meV in ZnSe 1−x O x with x=0.0135. Similar effects have been previously observed in other HMAs [20][21][22][23][24][25][26]. In order to analyze the observed temperature dependence of the band gap, we note that because of the highly localized nature of the O level it can be assumed that the energy of this level is independent on temperature on the absolute scale, i.e.…”

supporting

confidence: 66%

Effects of band anticrossing on the temperature dependence of the band gap of ZnSe_1−xO_xalloys

Wełna¹,

Baranowski²,

Kudrawiec³

et al. 2016

Semicond. Sci. Technol.

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Interband optical transitions in highly mismatched ZnSe 1−x O x alloys with up to 1.35% O content have been studied with photoreflectance. Incorporation of oxygen results in a pronounced reduction of the temperature dependence of the energy gap of the alloy. A detailed analysis of the experimental data shows that the reduction in the temperature dependence of the band gap with increasing O content can be explained by the band anticrossing interaction between the temperature dependent conduction band of ZnSe host matrix and the temperature independent on the absolute scale energy highly localized O states. It has been shown that the assumption of constant energy separation between the oxygen level and the valence band cannot be applied in order to achieve good quantitative agreement of the theoretical and experiment data.

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supporting

confidence: 66%

Effects of band anticrossing on the temperature dependence of the band gap of ZnSe_1−xO_xalloys

Wełna¹,

Baranowski²,

Kudrawiec³

et al. 2016

Semicond. Sci. Technol.

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“…Previous reports derived a reduced dependence of the band-gap energy of diluted nitrides with temperature as compared to their N-free counterpart. [17][18][19][20][21][22] It is worth noting that these works were based on PL measurements corrected from carrier localization energy at low temperatures. We believe that the discrepancy with our results is due to an inaccuracy in the estimate of the carrier localization from PL measurements.…”

Section: A Photoreflectance Versus Macrophotoluminescencementioning

confidence: 99%

“…It is worth noting that the PL technique is particularly inappropriate to measure the temperature dependence of the band-gap energy of III-V-N alloys due to this strong carrier localization. [17][18][19][20][21][22] Therefore, investigations on temperature dependence of the energy [E 0 (T )] and broadening parameter [ 0 (T )] of the fundamental band gap for III-V-N alloys are necessary to clarify the issue of localized and delocalized states in various III-V-N.…”

Section: Introductionmentioning

confidence: 99%

Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN0.02As0.98, Ga
Kudrawiec
¹
,
Latkowska
²
,
Baranowski
³

et al. 2013
Phys. Rev. B

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Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitionsbetween delocalized and localized states in GaN 0.02 As 0.98 , Ga 0.95 In 0.05 N 0.02 As 0.98 , and GaN 0.02 As 0.90 Sb 0.08 layers Optical transitions in as-grown and annealed GaN 0.02 As 0.98 , Ga 0.95 In 0.05 N 0.02 As 0.98 , and GaN 0.02 As 0.90 Sb 0.08 bulklike layers have been studied with photoreflectance (PR), photoluminescence (PL), and microphotoluminescence (μPL) in a broad range of temperatures. The exciton binding energy and the temperature dependence of the energy gap have been determined from PR measurements. In addition, the alloy-related broadening of optical transitions has been analyzed and compared for the three alloys. The largest alloy inhomogeneities have been observed for GaN 0.02 As 0.90 Sb 0.08 . In μPL spectra of GaN 0.02 As 0.98 and Ga 0.95 In 0.05 N 0.02 As 0.98 layers measured at low temperatures and low excitation conditions, sharp PL lines of 100-300-μeV widths have been clearly observed ∼10-20 meV below the energy gap of these alloys. Analyzing the temperature quenching of the sharp PL lines, they have been attributed to the recombination of localized excitons trapped at deep donor (acceptor)-like states. Such lines were not well resolved for GaN 0.02 As 0.90 Sb 0.08 layers. The analysis of thermal quenching of localized exciton emission suggests that for this alloy excitons are localized mostly on alloy content fluctuations. With the increase in the excitation power an additional PL band has been observed in μPL spectra at the higher-energy side. This band corresponds to the optical transitions between delocalized states which are observed in photoreflectance spectra. The emission of localized excitons without resolved sharp lines has been also observed with macro-PL measurements at low temperatures. In addition, the donor trap-valence band (DT-VB) recombination has been identified for the three alloys in macro-PL spectra. It has been clearly observed that the intensity of DT-VB recombination is the weakest for GaN 0.02 As 0.90 Sb 0.08 alloys whereas for GaN 0.02 As 0.98 and Ga 0.95 In 0.05 N 0.02 As 0.98 alloys it is very similar. The observed differences between the three alloys and the role of postgrowth annealing have been analyzed and discussed in the context of the influence of III-V host on alloy inhomogeneities, formation of native point defects in III-V-N alloys, and their influence on the optical quality of III-V-N alloys.

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Temperature-dependent photoluminescence spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs single quantum wells under different excitation intensities

Lourenço¹,

Dias²,

Duarte³

et al. 2007

Braz. J. Phys.

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The mechanism for low-temperature photoluminescence (PL) emissions in GaAsSb/AlGaAs and GaAsSbN/GaAs strained-layer single quantum wells (SQWs), grown by molecular-beam epitaxy, is studied in detail, using PL spectroscopy as a function of temperature and excitation intensity. In all samples, the PL peak energy as well as the full width at half maximum (FWHM), as a function of temperature, present anomalous behaviors, i.e., the PL peak energy shows a successive red/blue/redshift (S-shaped behavior) and the FWHM shows a successive blue/red/blueshift ("inverted S-shaped curve") with increasing temperature. At sufficiently low excitation intensity and in a narrow temperature interval (50-80 K), the nitrogen-containing samples present two clear competitive PL peaks. The low-energy PL mechanism (8-80 K) is dominated by localized PL transitions, while the high-energy PL mechanism is dominated by the ground state (e1-hh1) PL transition. Additionally, these PL peaks show different temperature dependence with the low-energy PL peak, showing a stronger redshift than the high-energy PL peak. A competition process between localized and delocalized excitons is used to discuss these PL properties.

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Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy

Cited by 3 publications

References 36 publications

Effects of band anticrossing on the temperature dependence of the band gap of ZnSe_1−xO_xalloys

Effects of band anticrossing on the temperature dependence of the band gap of ZnSe_1−xO_xalloys

Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN0.02As0.98, Ga
Kudrawiec
¹
,
Latkowska
²
,
Baranowski
³

et al. 2013
Phys. Rev. B

Temperature-dependent photoluminescence spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs single quantum wells under different excitation intensities

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Anomalous temperature-dependent photoluminescence characteristic of as-grown GaInNAs/GaAs quantum well grown by solid source molecular beam epitaxy

Cited by 3 publications

References 36 publications

Effects of band anticrossing on the temperature dependence of the band gap of ZnSe1−xOxalloys

Effects of band anticrossing on the temperature dependence of the band gap of ZnSe1−xOxalloys

Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN0.02As0.98, GaKudrawiec1, Latkowska2, Baranowski3 et al. 2013Phys. Rev. B

Temperature-dependent photoluminescence spectra of GaAsSb/AlGaAs and GaAsSbN/GaAs single quantum wells under different excitation intensities

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Product

Resources

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Effects of band anticrossing on the temperature dependence of the band gap of ZnSe_1−xO_xalloys

Effects of band anticrossing on the temperature dependence of the band gap of ZnSe_1−xO_xalloys

Photoreflectance, photoluminescence, and microphotoluminescence study of optical transitions between delocalized and localized states in GaN0.02As0.98, Ga
Kudrawiec
¹
,
Latkowska
²
,
Baranowski
³

et al. 2013
Phys. Rev. B