2009
DOI: 10.1149/1.3206602
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Anomalous VFB Shift in High-k Gate Stacks - Is its Origin at the Top or Bottom Interface ? -

Abstract: The biggest challenge of metal/high-k gate stack technology is controlling the V TH because achieving a high performance CMOS is almost impossible without it. We discuss anomalous V TH in poly-Si/high-k gate stacks and in metal/high-k systems. The possible origin for anomalous behavior is also discussed, focusing on the dipole formation difference between the top and bottom interfaces.

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Cited by 28 publications
(28 citation statements)
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“…However, the O − -ion migration is expected to occur even if other types of expressions are employed, as long as the expression correctly describes the nature of O − ions with a large ionic radius. For example, similar results are obtained using the potential function proportional to 1=r 12 , which is the short-range term of the Lennard-Jones potential.…”
supporting
confidence: 65%
See 1 more Smart Citation
“…However, the O − -ion migration is expected to occur even if other types of expressions are employed, as long as the expression correctly describes the nature of O − ions with a large ionic radius. For example, similar results are obtained using the potential function proportional to 1=r 12 , which is the short-range term of the Lennard-Jones potential.…”
supporting
confidence: 65%
“…The V TH changes depend on the materials of the high-k oxide, which is attributed to the electric dipole layer that forms at the interface between the high-k oxide and the underling interfacial SiO 2 layer. [1][2][3][4][5][6][7][8][9][10][11][12][13][14] However, the physics of dipole layer formation is controversial; thus, guidelines for V TH tuning using the interfacial dipole have not yet been established.…”
mentioning
confidence: 99%
“…[5][6][7] The control of the effective work function is related to the formation of dipoles at the interface between the high-κ dielectric and the interfacial SiO 2 layer underneath. [8][9][10] A schematic illustration of the location of a dipole layer is shown in Fig. 1.…”
mentioning
confidence: 99%
“…Oxygen displacement in the network due to Si's higher oxygen affinity than Ta is a possible mechanism. In fact, SiO 2 /high-κ dielectrics interfaces are known to form defects, such as dipoles (V O -I O pairs) caused by oxygen displacement (due to deferring oxygen areal densities in these materials [72,73], or oxygen vacancies [74,75]. Note, that the oxygen vacancy formation energy in Ta 2 O 5 is low compared to other high-k dielectrics [76].…”
Section: Mechanism Of the Anomalous V Th Shiftmentioning
confidence: 99%