Anti-bubble topcoat for immersion lithography

Marinier, Laurent; Aksenov, Y.; Morton, Rob; Steenwinckel, David Van; Zandbergen, Peter

doi:10.1117/12.599643

Cited by 2 publications

(1 citation statement)

References 0 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Top coat (TC) and TC-less resist are well-known as materials for ArF immersion exposure process ( Fig.1) [2][3][4][5]. From the view point of material costs, TC-less resist process is more preferable than TC process.…”

Section: Introductionmentioning

confidence: 99%

Challenges and Progress in Low Defectivity for advanced ArF Lithography Processes using Surface Localized Material Technology

Shirakawa¹,

Fujimori²,

Tango³

et al. 2017

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

The main challenge in ArF lithography is to reduce cost of ownership (CoO) because increase in multi-patterning process is generally required to obtain a fine pattern. As a consequence, industry strongly requires ArF lithography process with a fast scan speed scanner and low defectivity material for CoO. The breakthrough technology to improve defectivity and resolution simultaneously was the polarity-change property of film surface from hydrophobic to hydrophilic after alkaline development process because a property after development process should be only associated with defectivity, not with fast scan speed. The materials with high polarity change function were explored to EUV process to achieve low defectivity with good lithography performances.

show abstract

Section: Introductionmentioning

confidence: 99%

Challenges and Progress in Low Defectivity for advanced ArF Lithography Processes using Surface Localized Material Technology

Shirakawa¹,

Fujimori²,

Tango³

et al. 2017

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

show abstract

Challenges and Progress in Defectivity for Advanced ArF Lithography Process

Tango

Takahashi

Marumo

et al. 2018

J. Photopol. Sci. Technol.

View full text Add to dashboard Cite

The contentious issue in ArF lithography is to reduce cost with multi-patterning process. To achieve low defectivity is required at high speed scanner for increasing throughput. Especially, demand of applying topcoat (TC) less process is being increasing recent year at using high speed scanner. The hydrophobic film surface is preferred because less immersion defect is caused without remaining water droplet in exposure. For positive-tone development (PTD) by using alkaline developer, the polarity-change property function of film surface from hydrophobic to hydrophilic after alkaline development process is key to reduce defectivity. High alkaline-responsive materials which were not only polymer additives but also copolymers as main component of resist have good potential to defectivity reducing. Additionally, to suppress swelling is one of very impotent factor to improve bridge type defect mode.

show abstract

Anti-bubble topcoat for immersion lithography

Cited by 2 publications

References 0 publications

Challenges and Progress in Low Defectivity for advanced ArF Lithography Processes using Surface Localized Material Technology

Challenges and Progress in Low Defectivity for advanced ArF Lithography Processes using Surface Localized Material Technology

Challenges and Progress in Defectivity for Advanced ArF Lithography Process

Contact Info

Product

Resources

About