Anti-ferroelectric Hf_xZr_1-xO₂ Capacitors for High-density 3-D Embedded-DRAM

Emerging Fluorite-Structured Antiferroelectrics and Their Semiconductor Applications

“…Furthermore, the read/write speed of capacitors is strongly related to the polarization switching time in AFE materials, which must be equal to 10 ns or less for eDRAM operation . Considering the resistor–capacitor (RC) time constant (i.e., the product of the circuit resistance and circuit capacitance), the intrinsic AFE response time of the proposed device was expected to be shorter than 10 ns . Thus, the fluorite-structured AFE materials fabricated by the well-established ALD technique can be potentially used in high-density 3D-structured DRAM cell capacitors.…”

Reliability Study of 1T1C FeRAM Arrays With Hf0.5Zr0.5O₂ Thickness Scaling

“…In addition, anti-ferroelectric type (AFE-type) 1T1C FeRAMs comprising tetragonal phase dominant HfO2-based ferroelectric material have been proposed. The remanent polarization of the AFEtype 1T1C FeRAMs becomes smaller than that of ferroelectric type 1T1C FeRAMs, but low operation voltage with high endurance would be obtained [14], [15]. On the other hand, film thickness scaling allows ferroelectric type (FE-type) 1T1C FeRAMs to reduce the operating voltage more flexibly compared with FeFETs or FTJs, owing to the thickness optimization between the ferroelectric layer and insulation layer.…”

Polarization Evolution in Nanometer-Thick PbZrO3 Films: Implications for Energy Storage and Pyroelectric Sensors

“…Dielectric materials with polar ordering feature unique dipolar arrangements, which advances their diverse applications in electronics. Antiferroelectrics are receiving tremendous attention and research interest for their extensive applications in high-energy-storage capacitors, , microactuators, pyroelectric security sensors, cooling devices, tunnel junctions, memories, , etc. Such applications greatly rely on the dipole arrangement and response to an external field in antiferroelectrics.…”

“…Polarization evolution in a ferroelectric nanoscale film is amazing and excites the exploration of antiferroelectric polarization with scale-down. On the other hand, cycloidal order of polarization during the antiferroelectric and ferroelectric phase transition in antiferroelectric bulk has been observed under electron-beam illumination. , Compared with the bulk, the ultrathin antiferroelectric film with nanometer-thickness could enable a higher energy storage density , and a stable memory performance over its conventional ferroelectric counterpart. , Exploring the polarization vector distribution with thickness in an antiferroelectric film is meaningful for the guidance of device design in nanoscale. However, the polarization evolution and corresponding electrical response still remain as unsolved issues.…”

“…17,18 Compared with the bulk, the ultrathin antiferroelectric film with nanometer-thickness could enable a higher energy storage density 1,2 and a stable memory performance over its conventional ferroelectric counterpart. 7,8 Exploring the polarization vector distribution with thickness in an antiferroelectric film is meaningful for the guidance of device design in nanoscale. However, the polarization evolution and corresponding electrical response still remain as unsolved issues.…”