Anti‐Phase Domains and Dislocation Ribbons in Tealite (PbSnS<sub>2</sub>)

Marinković, V.; Amelinckx, S.

doi:10.1002/pssb.19640060320

Cited by 19 publications

(11 citation statements)

References 6 publications

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“…The (001) plane is the glide and/or cleavage plane in the orthorhombic structure under consideration (see Ref. 29) as already reported for the isostructural compounds GeSe 30–32 and GeS 31, too. This means, due to the 90° twisting between stacked blocks around their common c ‐axis with following plastic relaxation (001) twist boundaries are formed consisting of rectangular networks of screw dislocations to reduce interfacial strain.…”

Section: Resultssupporting

confidence: 62%

Microstructure of Sn_1–xPb_xS grown by hot‐wall technique

Wagner

Kaden

Lazenka

et al. 2011

Physica Status Solidi (a)

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Orthorhombic Sn1–xPbxS (x ≈ 0.1) was grown on glass substrates by hot‐wall technique. The entire deposited material is subdivided into a more or less continuous layer and whiskers grown on it. The former one consists of stacked blocks with their c‐axis always parallel to growth direction. However, each block is alternately rotated 90° around the [001] against its underlying and following one. Therefore, the boundaries between them are twist boundaries having an orthogonal network of pure screw dislocations due to plastic relaxation. On these blocks Sn1–xPbxS whiskers of the same composition grow via a VLS mechanism. Especially, these whiskers consist of either thicker misaligned blocks, too (at 300 °C), or at higher growth temperatures (e.g., 320 °C) they contain many 90°‐twisted very thin strained sequences being intergrown pseudomorphically. Based on α‐SnS (Herzenbergite) a structural model is presented which is sufficient to describe the defects observed and to simulate the corresponding HRTEM images.

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Section: Resultssupporting

confidence: 62%

Microstructure of Sn_1–xPb_xS grown by hot‐wall technique

Wagner

Kaden

Lazenka

et al. 2011

Physica Status Solidi (a)

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“…Besides the phase boundaries and dislocations in all three samples, we also found high density stacking faults in samples of 0.055% PbI 2 doped PbTe‐PbSnS 2 (11% and 25%) and displacement layers in 2% PbS doped PbTe‐PbSnS 2 14%, however the number density of the stacking faults in pure PbSnS 2 was not high 23 . Figure (a) clearly shows the regular stacking faults as pointed out by arrowheads for the sample PbTe‐PbSnS 2 25%.…”

mentioning

confidence: 63%

“…PbSnS 2 has orthorhombic structure [Figure 1(b)] with space group Pnma (No. 62) and lattice parameters a = 1.1166 nm, b = 0.3999 nm, c = 0.4210 nm 22, 23. The crystal structure of PbSnS 2 exhibits Pb‐Sn bilayers, approximately 0.56 nm, which form a superstructure along the a axis.…”

mentioning

confidence: 99%

Strong Phonon Scattering by Layer Structured PbSnS₂ in PbTe Based Thermoelectric Materials

He¹,

Girard²,

Zheng³

et al. 2012

Advanced Materials

137

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The incorporation of PbSnS(2) in PbTe results in a tremendous reduction of the lattice thermal conductivity to 0.8 W/mK at room temperature, a reduction of almost 60% over bulk PbTe. Transmission electron microscopy reveals very high density displacement layers, misfit dislocations, and phase boundaries. Our thermal transport calculations based on modified Debye-Callaway model, well in agreement with the experimental measurements, reveal that the layer structured PbSnS(2) plays an important role in reducing the lattice thermal conductivity.

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“…31) for A and B models, respectively. Marinkovic and Amelinckx suggested a different distribution of the metal atoms, also involving the formation of bilayers, but with different arrangement and symmetry (model C, Figure ) and without specifying a certain space group. The A, B, and C models can be considered as superstructures of the model 0 structure, whereby the submodels show no alteration of lattice parameters of the unit cell but do exhibit differing symmetry. , Two representative projections of the models are presented in Figure along the crystallographic [001] and [110] directions.…”

Section: Resultsmentioning

confidence: 99%

Analysis and Implications of Structural Complexity in Low Lattice Thermal Conductivity High Thermoelectric Performance PbTe–PbSnS₂ Composites

et al. 2016

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The high-performance PbTe–SnTe–PbS thermoelectric system forms a completely new composite PbTe–PbSnS2 with high n-type figure of merit. Electron diffraction and high-resolution electron microscopy characterization of the thermoelectric composite PbTe + 25% PbSnS2 reveals that the system is nanostructured, with PbSnS2nanocrystals in the range of 80 to 500 nm in size. In most of the cases, they are endotaxially grown within the PbTe matrix. Three independent crystal superstructures were observed for the PbSnS2 inclusions, originating from the same parent SnS-type structure. The presence of the parent structure is not excluded. Modified structural models for two of the superstructures observed in the PbSnS2 precipitates are proposed. Often, more than one of the structural phases are observed in the same nanocrystal, providing one extra phonon scattering factor in the system. Evidence was also found for the growth process of the nanocrystals, starting from PbS and followed by gradual dissolving of SnS. Our findings suggest that this nanostructured thermoelectric composite exhibits unique structural complexity, which contributes to the low lattice thermal conductivity reported for these nanocomposite materials.

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Anti‐Phase Domains and Dislocation Ribbons in Tealite (PbSnS₂)

Cited by 19 publications

References 6 publications

Microstructure of Sn_1–xPb_xS grown by hot‐wall technique

Microstructure of Sn_1–xPb_xS grown by hot‐wall technique

Strong Phonon Scattering by Layer Structured PbSnS₂ in PbTe Based Thermoelectric Materials

Analysis and Implications of Structural Complexity in Low Lattice Thermal Conductivity High Thermoelectric Performance PbTe–PbSnS₂ Composites

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Anti‐Phase Domains and Dislocation Ribbons in Tealite (PbSnS2)

Cited by 19 publications

References 6 publications

Microstructure of Sn1–xPbxS grown by hot‐wall technique

Microstructure of Sn1–xPbxS grown by hot‐wall technique

Strong Phonon Scattering by Layer Structured PbSnS2 in PbTe Based Thermoelectric Materials

Analysis and Implications of Structural Complexity in Low Lattice Thermal Conductivity High Thermoelectric Performance PbTe–PbSnS2 Composites

Contact Info

Product

Resources

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Anti‐Phase Domains and Dislocation Ribbons in Tealite (PbSnS₂)

Microstructure of Sn_1–xPb_xS grown by hot‐wall technique

Microstructure of Sn_1–xPb_xS grown by hot‐wall technique

Strong Phonon Scattering by Layer Structured PbSnS₂ in PbTe Based Thermoelectric Materials

Analysis and Implications of Structural Complexity in Low Lattice Thermal Conductivity High Thermoelectric Performance PbTe–PbSnS₂ Composites