Surface behavior modification by
forming surface-transparent conductive
nanowires (NWs) is an important technique for many applications, particularly
when the polarities of the NWs can be controlled. The polarities of
Ga-doped ZnO (GaZnO) NWs grown on templates of different polarities
under different growth conditions are studied for exploring a polarity
control growth technique. The NWs are formed on Ga- and N-face GaN
through the vapor–liquid–solid (VLS) process using Ag
nanoparticles as growth catalyst. The NWs
grown on templates of different polarities under the Zn- (O-) rich
conditions are always Zn (O) polar. During the early stage
of NW growth, because the lattice sizes among different nucleation
islands formed at the triple-phase line are quite different, high-density
planar defects are produced when lateral growths from multiple nucleation
islands form a GaZnO double bilayer. In this situation, frequent domain
inversions occur, and GaZnO polarity is unstable. Under the Zn- (O-)
rich conditions, because the lateral growth rate of GaZnO in the
Zn- (O-) polar structure is higher due to more available dangling
bonds,
the growth of the Zn- (O-) polar structure dominates NW formation
such that the NW eventually
becomes Zn (O) polar irrespective of the polarity of the growth template.
Therefore, the polarity of a doped-ZnO NW can be controlled simply
by the relative supply rates of Zn and O during VLS growth.