Anti-Shock Air Gap Control for SIL-Based Near-Field Recording System

Kim, Jung-Gon; Kim, Wan-Chin; Hwang, Hyunwoo; Shin, Weon Ho; Park, Kyoung‐Su; Park, No−Cheol; Yang, Hyunseok; Park, Young−Pil

doi:10.1109/tmag.2009.2016237

Cited by 14 publications

(2 citation statements)

References 6 publications

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“…In terms of the bandwidth, we selected a dead-zone nonlinear controller, the gain value of which was set to 70 on the basis of the preexperiment results. 14) In addition, to facilitate faster and more accurate cancellation of specific narrow band disturbances, such as experimentally measured at 60, 105, and 240 Hz, a NBDF-based controller was designed and the gain value was set to 0.0003.…”

Section: Design Of Nanogap Control Algorithmmentioning

confidence: 99%

“…The SIL-based nanolithography method can precisely control the nanogap between the optical head and the substrate with an active gap controller that uses the gap error signal (GES); [12][13][14] thus the line patterning with a several tens nanometer-size width can be performed at high speed. To realize an optical head beyond the diffraction limit, we designed and fabricated a plasmonic SIL optical head with an optimized sharp-ridged hightransmission nanoaperture on an Al film.…”

Section: Introductionmentioning

confidence: 99%

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Application of Solid Immersion Lens-Based Near-Field Recording Technology to High-Speed Plasmonic Nanolithography

Park

Kim

Lee

et al. 2012

Jpn. J. Appl. Phys.

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In this paper, we proposed a high-speed and high-throughput plasmonic nanolithography technique that uses a fabricated sharp-ridged nanoaperture on a solid immersion lens (SIL) and a precise active nanogap control algorithm. This plasmonic lithography with high throughput can make an optical spot with a diameter of the order of 10 nm and can perform nanopatterning at sub-m/s speed. An optical high-throughput head was designed on a metallic aluminum aperture by optimizing the geometric parameters of a sharp-ridged antenna on the basis of the optical intensity and spot size. Using the evanescent field generated from the SIL, the plasmonic SIL could be maintained below 20 nm above a photoresist-coated Si-wafer and could move at a speed of greater than 200 mm/s without friction; the patterning of lines could be performed under this condition. We achieved patterning with a line width (full-width at half-magnitude, FWHM) of 130 nm.

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Section: Design Of Nanogap Control Algorithmmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Application of Solid Immersion Lens-Based Near-Field Recording Technology to High-Speed Plasmonic Nanolithography

Park

Kim

Lee

et al. 2012

Jpn. J. Appl. Phys.

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Improved safety mode considering external shock direction for near-field recording system using SIL

et al. 2011

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To increase the near-field coupling efficiency in a near-field recording (NFR) system, extremely small air gap (less than 100 nm) between the solid immersion lens (SIL) and media should be maintained. However, maintaining the air gap is very important and difficult. Despite various anti-shock control methods, there are physical limitations to controlling the air gap against external shock. A safety mode that moves the actuator to the initial position for large external shock is currently being used. The existing safety mode exhibits good performance for downward shocks of 6 G amplitude and 10 ms duration time, but some problems arise for upward shocks of 3 G amplitude and 10 ms duration time. To avoid collision for upward and downward shocks, we present an improved safety mode that considers the direction of the external shock for an SIL-based near-field recording system. We analyzed the upward and downward shock responses of the NFR system. The shape of the pulse input was designed to minimize the overshoot of the actuator. Through various experiments, the amplitude and duration time of the pulse input were optimized. Even with an upward shock with 8 G and 10 ms, no collision was observed between the actuator and the media by using the improved safety mode with the optimized pulse input.

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Physical principles and current status of emerging non-volatile solid state memories

Wang

Yang

Wen

2015

Electron. Mater. Lett.

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Today the influence of non-volatile solid-state memories on persons' lives has become more prominent because of their non-volatility, low data latency, and high robustness. As a pioneering technology that is representative of non-volatile solidstate memories, flash memory has recently seen widespread application in many areas ranging from electronic appliances, such as cell phones and digital cameras, to external storage devices such as universal serial bus (USB) memory. Moreover, owing to its large storage capacity, it is expected that in the near future, flash memory will replace hard-disk drives as a dominant technology in the mass storage market, especially because of recently emerging solid-state drives. However, the rapid growth of the global digital data has led to the need for flash memories to have larger storage capacity, thus requiring a further downscaling of the cell size. Such a miniaturization is expected to be extremely difficult because of the well-known scaling limit of flash memories. It is therefore necessary to either explore innovative technologies that can extend the areal density of flash memories beyond the scaling limits, or to vigorously develop alternative non-volatile solid-state memories including ferroelectric random-access memory, magnetoresistive random-access memory, phase-change random-access memory, and resistive random-access memory. In this paper, we review the physical principles of flash memories and their technical challenges that affect our ability to enhance the storage capacity. We then present a detailed discussion of novel technologies that can extend the storage density of flash memories beyond the commonly accepted limits. In each case, we subsequently discuss the physical principles of these new types of non-volatile solid-state memories as well as their respective merits and weakness when utilized for data storage applications. Finally, we predict the future prospects for the aforementioned solid-state memories for the next generation of data-storage devices based on a comparison of their performance.

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Anti-Shock Air Gap Control for SIL-Based Near-Field Recording System

Cited by 14 publications

References 6 publications

Application of Solid Immersion Lens-Based Near-Field Recording Technology to High-Speed Plasmonic Nanolithography

Application of Solid Immersion Lens-Based Near-Field Recording Technology to High-Speed Plasmonic Nanolithography

Improved safety mode considering external shock direction for near-field recording system using SIL

Physical principles and current status of emerging non-volatile solid state memories

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