Interatomic antibonding states are commonly linked to a reduced bonding strength and lattice anharmonicity, both of which play a crucial role in determining the heat transport properties of crystalline solids. However, there is still a need for a comprehensive understanding of their specific relevance in order to design materials with significant control over lattice thermal conductivity (κ L ). Herein, the nature of the antibonding state and its influence on the chemical bonds and anharmonicity in three types of w-InSb (w-InAs), SnTe (SnSe), and CdTe 2 (CdSe 2 ) compounds are studied. We show that in comparison to the strong bonding states observed in w-InSb, occupied Sn−Te antibonding states in SnTe originate from the Sn-5s and Te-5p electrons. This bonding behavior results in enhanced lattice anharmonicity, which is characterized by a large Gruneisen parameter. Furthermore, the antibonding states in CdTe 2 , caused by the presence of Te 2 dimers, significantly weaken the heat transport-dominant Cd−Te bonds. As a consequence, this leads to larger bond lengths, smaller interatomic force constants, and lower Debye temperatures, contributing to a large suppression of κ L . Moreover, by combining the reasonably high power factor of CdTe 2 that arises from its multivalley band characteristics, we find remarkably high ZTs of 2.5 and 2.4 at 500 K for p-type and n-type CdTe 2 , respectively. Overall, this work enhances our understanding of the relationship between antibonding states, chemical bonds, and lattice thermal conductivity, and also establishes a simplified descriptor for searching high-performance thermoelectric materials.