Antidote-induced armchair graphene nanoribbon based resonant tunneling diodes

Abstract

Resonant tunneling phenomena are explored using armchair graphene nanoribbon (AGNR), which eliminates the lattice mismatch and electron mobility degradation problems of conventional heterostructure resonant tunneling diodes (RTDs). Eight antidote topologies are proposed in this paper. These antidote topologies significantly increase or decrease the band gap of AGNR. Both double barrier quantum well and single barrier quantum well structures have been achieved by putting the antidote-induced AGNRs and pristine AGNRs. A numerical approach with a tight binding model and non-equilibrium Green's function formalism has been used to simulate the quantum phenomena of the device. Current-voltage characteristics of these proposed RTDs show a high peak to valley ratio and low power dissipation with respect to different antidote topologies. Channel length variation effects are investigated in the proposed RTDs, and it is found that the peak to valley ratio, valley current, valley voltage, and power dissipation can be improved by tuning the channel length. These graphene-based RTDs are easy to fabricate and offer more flexibility in terms of peak to valley ratio, valley current, valley voltage, and power dissipation.

A semi-classical Floquet-NEGF approach to model photon-assisted tunneling in quantum-well devices

“…The sparsity of the involved matrices is kept, and shifting of energy intervals no longer complicates the scheme as was the case for the traditional method. Furthermore, since only G R n,0 (E)-matrices are required in (32), it is not necessary to invert the full block-matrix. Instead, the system of equations can be partially solved.…”

“…A method that meets both of these requirements is the non-equilibrium Green's function formalism (NEGF), which was pioneered in the 60s by Schwinger, Kadanoff-Baym and Keldysh [20][21][22]. This many-body physics based solution tool allows the calculation of device properties based on the Hamiltonian of the device and it has been applied broadly to the modeling of, e.g., atoms [23], nanojunctions [24,25], transistors [26], quantum dots [27,28] and carbon nanodevices [29][30][31][32].…”

Resonant tunnelling of wave packet

“…There are ongoing research on RTDs based on heterostructure materials such as the hole-tunneling in Si 0.82 Ge 0.18 Si asymmetric double-quantum-well RTD with suppressed thermionic emission and significant resonance current studied by Shinkawa et al [9]. On the other hand, an interest is growing on the application of RTDs based on graphene nanoribbons structure [10][11][12][13]. In the reference of [10], the authors investigated a novel method of RTDs utilizing antidote-induced armchair graphene nanoribbons (AGN).…”

“…On the other hand, an interest is growing on the application of RTDs based on graphene nanoribbons structure [10][11][12][13]. In the reference of [10], the authors investigated a novel method of RTDs utilizing antidote-induced armchair graphene nanoribbons (AGN). The related study [12] discussed the performance of AGN RTDs enhanced by antidote and boron/nitride atoms doping.…”

Study of Conductance in Graphene Nanochannels for Symmetric and Asymmetric Junction Configurations

“…Jimenez et al studied the I-V characteristics of AGNR where a channel with electrodes attached on both sides acts as a potential barrier and the overall considered shape behaves as a graphene tunnel diode (Jimenez et al 2014). Hossain et al investigated the tunneling behavior of AGNR by introducing different topologies of antidote in the channel region (Hossain et al 2021). Teong et al studied the I-V characteristics of different graphene nanoribbon junctions like H, W, and S-shape (Teong et al 2009).…”