Antiferroelectric-like properties and enhanced polarization of Cu-doped K0.5Na0.5NbO3 piezoelectric ceramics

Ke, Shanming; Huang, Haitao; Fan, Huiqing; Lee, H. K.; Zhou, Limin; Mai, Yiu‐Wing

doi:10.1063/1.4747212

Cited by 74 publications

(41 citation statements)

References 21 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[32][33][34] Because the ionic radius of Sb 5+ (0.60 A) is slightly smaller than that of Nb 5+ (0.64 A), 35 the replacement of Sb 5+ in Nb 5+ may lead to a shift of central ion in BO 6 octahedron and thus weaken the stability of the BO 6 octahedron, inducing the weakening of B-O bond strength. 37 As a result of the combination of the replacement of Sb 5+ in Nb 5+ and the generation of oxygen vacancies, the Raman shifts of v 1 and v 5 decrease with x increasing. 36 Besides, after the substitution of Cu 2+ for Nb 5+ , the oxygen vacancies are created to compensate charge neutrality in ceramics, giving an increase in the distance between B-site atoms and oxygen atoms, which also induces a weakening of B-O bond strength.…”

Section: Resultsmentioning

confidence: 99%

“…As shown in Figure 2G, for the DC1 defect complex, it contains a large electric dipole moment P DC1 =qÁl with q=À3e at Cu 2+ site and q=+2e at oxygen vacancy site, and the distance l is equal to the distance of oxygen vacancy site to Cu 2+ site. 37,38 Therefore, the electric dipole moment for DC2 almost vanishes. 37,38 Therefore, the electric dipole moment for DC2 almost vanishes.…”

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Defect‐driven evolution of piezoelectric and ferroelectric properties in CuSb₂O₆‐doped K_0.5Na_0.5NbO₃ lead‐free ceramics

Wang

Deng

et al. 2017

J Am Ceram Soc

View full text Add to dashboard Cite

Defect greatly affects the microscopic structure and electrical properties of perovskite piezoelectric ceramics, but the microscopic mechanism of defect-driven macroscopic properties in the materials is not still completely comprehended. In this work, K 0.5 Na 0.5 NbO 3 +x mol CuSb 2 O 6 lead-free piezoelectric ceramics were fabricated by a solid-state reaction method and the defect-driven evolution of piezoelectric and ferroelectric properties was studied. The addition of CuSb 2 O 6 induces the formation of dimeric ðCu 000At low doping concentration of CuSb 2 O 6 (0.5-1.0 mol%), DC1 and DC2 coexist in the ceramics and harden the ceramics, inducing a constricted double P-E loop and high Q m of 895 at x=0.01. However, DC2 becomes more dominant in the ceramics with high concentration of CuSb 2 O 6 (≥1.5 mol%) and thus leads to softening behavior of piezoelectricity and ferroelectricity as compared to the ceramic with x=0.01, giving a single slanted P-E loop and relatively low Q m of 206 at x=0.025. All ceramics exhibit relatively high d 33 of 106-126 pC/ N. Our study shows that the piezoelectricity and ferroelectricity of K 0.5 Na 0.5 NbO 3 ceramics can be tailored by controlling defect structure of the materials. K E Y W O R D Sdefects, ferroelectricity/ferroelectric materials, lead-free ceramics, perovskites, piezoelectric materials/ properties

show abstract

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Defect‐driven evolution of piezoelectric and ferroelectric properties in CuSb₂O₆‐doped K_0.5Na_0.5NbO₃ lead‐free ceramics

Wang

Deng

et al. 2017

J Am Ceram Soc

View full text Add to dashboard Cite

show abstract

“…These changes should be resulted from the resistance effect from the defect polarization (P D ) and the "pinning" effect of the defects (e.g., Sc Ta 00 and V O •• ) on the domain walls, where P D could provide a restoring force to reverse the switched ferroelectric domains after removing the external field. 40 Therefore, an increase in d 33 of the NBTO-x seems to be incompatible with the "harden" of the ferroelectric polarization and the decrease of the P r and P max . One probability is that: the defect polarization associated with non-centric distributing defect dipoles [(Sc Ta 00 -V O •• ) Â ], is reoriented along the poled field and follows the reverse of the ferroelectric domains during samples' poling.…”

Section: A Structure and Phase Transitionmentioning

confidence: 98%

“…So the enhanced intrinsic lattice contribution could be responsible for the increased d 33 of the acceptor NBTO-x. However, further Sc 3þ acceptor substitution (e.g., x ¼ 0.05) could lead to a decrease in the number of dimeric defect dipoles (Sc Ta 00 ÀV O •• , DC1) and an increase of in the number of trimeric defect complexes 40 The trimeric DC2 almost has no dipole moment due to its symmetric configuration, and is non-dipolar. 42 Therefore, the piezoelectric activity contributing from the reversal of the P D is weakened, and thus an abnormal decrease in d 33 is observed for the NBTO-0.05.…”

Section: A Structure and Phase Transitionmentioning

confidence: 99%

Hole conduction and electro-mechanical properties of Na0.5Bi2.5Ta2O9-based piezoelectric ceramics with the Li+/Ce3+/Sc3+ modification

Long¹,

Fan²,

Wu³

et al. 2014

Journal of Applied Physics

View full text Add to dashboard Cite

Articles you may be interested inElectromechanical strain and bipolar fatigue in Bi(Mg1/2Ti1/2)O3-(Bi1/2K1/2)TiO3-(Bi1/2Na1/2)TiO3 ceramics Na 0.5 Bi 2.5 Ta 2 O 9 -based piezoelectric ceramics, Na 0.5-x Bi 0.5-x Li x Ce x Bi 2 Ta 2-x Sc x O 9-x (NBTO-x, x ¼ 0-0.05), were synthesized by using a solid-state reaction process, and their electro-mechanical properties and electrical conduction behaviors were investigated in detail. The Li þ /Ce 3þ /Sc 3þ modification improved the electro-mechanical properties of the ceramics effectively, whereas further N 2 or O 2 annealing led to no obvious increase in piezoelectric coefficient (d 33 ). The composition x ¼ 0.03 ceramic with high temperature stability had a Curie point (T c ) of 784 C and a d 33 of 25.8 pC/N, and its electromechanical coupling factors, k p and k t , were 11.8% and 20.7%, respectively. Variable-atmosphere (air, O 2 and N 2 ) impedance data suggested that the NBTO-x ceramics were mainly p-type materials contributing from the bulk response, and the conducting species were holes (h • ). Therefore, lower bulk resistivity (q) and lower activation energy (E a ) were associated with the treatment with higher P O2 (oxygen partial pressure). In addition, the O 2 atmosphere had stronger impact on the conductivity of the pure NBTO than those of the acceptor NBTO-x, and the grain and grain boundary contributed to its resistivity together. V C 2014 AIP Publishing LLC. [http://dx.

show abstract

“…The mechanism can be attributed to the effect of the symmetry-conforming principle of point defects [3]. An internal bias field is present in the poling direction after aging in poled ferroelectrics, leading to strong asymmetric P-E loops and polarization-electric field strain (S-E) loops [4,5]. Continuous operating electric field is avoided for keeping a stable strain output in materials with strain memory effect [6], which is advantageous for some actuator applications.…”

mentioning

confidence: 99%

Defect-dipole alignment and strain memory effect in poled Li doped (Bi0.5Na0.4K0.1)0.98Ce0.02TiO3 ceramics

Shi

Fan

Liu

et al. 2015

J Mater Sci: Mater Electron

View full text Add to dashboard Cite

Asymmetric ferroelectric hysteresis (P-E) loops and strain hysteresis (S-E) curves are detected in poled-aged Li doped (Bi 0.5 Na 0.4 K 0.1 ) 0.98 Ce 0.02 TiO 3 ceramics at room temperature. Temperature dependence of electrical and structural analysis is used to study the stability of electrically induced long-range ferroelectric order. Interestingly, this asymmetric characteristic can sustain at 80°C B T B 90°C, where the ferroelectric and non-ergodic relaxor phase coexist. Our results suggest that the preferentially reoriented defect dipoles have the pinning effect on temperature-and electric field-induced phase transition between long-range ferroelectric and relaxor.The aging effect is the time-dependent change of materials in ferroelectric, dielectric and piezoelectric characteristics [1,2]. A large recoverable electro-strain that stems from the reversible domain switching, accompanying with double polarization-electric field (P-E) hysteresis loop, has been observed in many aged acceptor perovskite ferroelectric materials. The mechanism can be attributed to the effect of the symmetry-conforming principle of point defects [3]. An internal bias field is present in the poling direction after aging in poled ferroelectrics, leading to strong asymmetric P-E loops and polarization-electric field strain (S-E) loops [4,5]. Continuous operating electric field is avoided for keeping a stable strain output in materials with strain memory effect [6], which is advantageous for some actuator applications.Bi 0.5 Na 0.5 TiO 3 (BNT) based material have attracted great attention after the recent discovery of the large strain [7][8][9][10][11], which is associated with the reversible phase transitions between relaxor and ferroelectric [12][13][14]. Recently, Fe-doped BNT-BaTiO 3 are reported to present aging effects in the poled state, but are absent in the relaxor state [15]. However, the effect of acceptor doping in BNT based material still need be further studied, due to the existence of relaxors phase with special polar structure at virgin state and the unique field-and temperature-induced phase transition in it. In this paper, strain memory effects are reported in Li 2 CO 3 doped (Bi 0.5 Na 0.4 K 0.1 ) 0.98 Ce 0.02 TiO 3 ceramics. The thermally stimulated depolarization currents (TSDC), temperature-dependent dielectric performance and X-ray diffraction (XRD) are measured to identify the influence of defect dipole on temperature-induced ferroelectric to relaxor phase transition. The asymmetric P-E and S-E loops at a broad temperature range are discussed to clarify the effect of defect dipole on fieldinduced relaxor to ferroelectric phase transition.The 0.5 mol % Li 2 CO 3 doped (Bi 0.5 Na 0.4 K 0.1 ) 0.98 Ce 0.02 TiO 3 (Li, Ce-BNKT) ceramics were prepared by a conventional solid state reaction technique sintered at 1150°C for 4 h. The P-E and S-E loops were measured at 1 Hz using a ferroelectric test unit (TF-2000, aix-ACCT, Aachen, Germany) for 30-120°C. During the polarization procedure, the samples were heated to a polari...

show abstract

Antiferroelectric-like properties and enhanced polarization of Cu-doped K_0.5Na_0.5NbO₃ piezoelectric ceramics

Cited by 74 publications

References 21 publications

Defect‐driven evolution of piezoelectric and ferroelectric properties in CuSb₂O₆‐doped K_0.5Na_0.5NbO₃ lead‐free ceramics

Defect‐driven evolution of piezoelectric and ferroelectric properties in CuSb₂O₆‐doped K_0.5Na_0.5NbO₃ lead‐free ceramics

Hole conduction and electro-mechanical properties of Na0.5Bi2.5Ta2O9-based piezoelectric ceramics with the Li+/Ce3+/Sc3+ modification

Defect-dipole alignment and strain memory effect in poled Li doped (Bi0.5Na0.4K0.1)0.98Ce0.02TiO3 ceramics

Contact Info

Product

Resources

About

Antiferroelectric-like properties and enhanced polarization of Cu-doped K0.5Na0.5NbO3 piezoelectric ceramics

Cited by 74 publications

References 21 publications

Defect‐driven evolution of piezoelectric and ferroelectric properties in CuSb2O6‐doped K0.5Na0.5NbO3 lead‐free ceramics

Defect‐driven evolution of piezoelectric and ferroelectric properties in CuSb2O6‐doped K0.5Na0.5NbO3 lead‐free ceramics

Hole conduction and electro-mechanical properties of Na0.5Bi2.5Ta2O9-based piezoelectric ceramics with the Li+/Ce3+/Sc3+ modification

Defect-dipole alignment and strain memory effect in poled Li doped (Bi0.5Na0.4K0.1)0.98Ce0.02TiO3 ceramics

Contact Info

Product

Resources

About

Antiferroelectric-like properties and enhanced polarization of Cu-doped K_0.5Na_0.5NbO₃ piezoelectric ceramics

Defect‐driven evolution of piezoelectric and ferroelectric properties in CuSb₂O₆‐doped K_0.5Na_0.5NbO₃ lead‐free ceramics

Defect‐driven evolution of piezoelectric and ferroelectric properties in CuSb₂O₆‐doped K_0.5Na_0.5NbO₃ lead‐free ceramics