Antiferroelectric Si:HfO<sub>2</sub> for High Energy Storage using 3D MIM Capacitors

Viegas, Alison E.; Mart, Clemens; Czernohorsky, M.

doi:10.1109/ifcs-isaf41089.2020.9234899

Cited by 4 publications

(2 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…3d). Importantly, the C-V results indicate the antiferroelectric behavior is maintained for the Al 2 O 3 -HZO superlattice in the trench, which is not a trivial assumption due to potential ferroic phase variations introduced by 3D deposition 56,57 (Supplementary Information). Along with the antiferroelectric behavior, the NC behavior also translates to the 3D capacitors (Fig.…”

Section: D-integrated Energy Storage Capacitorsmentioning

confidence: 99%

“…3b) considers areal ESD for the best-performing dielectric electrostatic microcapacitors in 3D-integrated structures, including anodized aluminum oxide, self-rolled structures, nanowires, and Si trenches (Supplementary Table 2). Some of the Si trench results have already integrated antiferroelectric ZrO 2 -based dielectrics [56][57][58] , but conventional fluorite-structure antiferroelectric thickness limitations restricted the films to at most 20 nm 57 . Also included are state-of-the-art electrochemical results, including microsupercapacitors and commercial Li-ion microbatteries (Supplementary Table 3).…”

Section: D-integrated Energy Storage Capacitorsmentioning

confidence: 99%

See 1 more Smart Citation

Giant energy storage ultrafast microsupercapacitors via negative capacitance superlattices

Cheema

Shanker

Hsu

et al. 2023

Preprint

View full text Add to dashboard Cite

Dielectric electrostatic capacitors, due to their ultrafast charge-discharge capability, are attractive for high power energy storage applications. Along with ultrafast operation, on-chip integration can enable miniaturized energy storage devices for emerging autonomous microelectronics and microsystems. Additionally, state-of-the-art electrochemical miniaturized energy storage systems – microsupercapacitors and microbatteries – currently face safety, packaging, materials, and microfabrication challenges preventing on-chip technological readiness, leaving an opportunity for electrostatic microcapacitors. Here we report record-high energy storage density (ESD) and power density (PD) across all electrostatic systems in HfO2-ZrO2 (HZO)-based thin film microcapacitors integrated directly on silicon, through a three-pronged approach. First, to increase intrinsic energy storage, atomic-layer-deposited antiferroelectric HZO films are engineered near a field-driven ferroelectric phase transition to exhibit amplified charge storage via the negative capacitance (NC) effect, which enhances volumetric-ESD beyond the best-known back-end-of-the-line (BEOL) compatible dielectrics (115 J-cm−3). Second, to increase overall stored energy, superlattice engineering of amorphous-templated HZO-Al2O3 heterostructures scales-up the high-storage antiferroelectric-NC behavior to the 100 nm regime, which overcomes the conventional thickness limitations of HZO-based (anti)ferroelectricity (10-nm regime). Third, to increase storage-per-footprint, the superlattices are conformally integrated into three-dimensional (3D) capacitors, which boosts areal-ESD (areal-PD) 9-times (170-times) the best known 3D electrostatic capacitors: 80 mJ-cm−2 (300 kW-cm−2). This simultaneous demonstration of ultrahigh ESD and PD overcomes the traditional capacity-speed trade-off across the electrostatic-electrochemical energy storage hierarchy. Furthermore, integration of ultrahigh-density and ultrafast charging thin films within a BEOL-compatible process enables monolithic integration of on-chip microsupercapacitors, which opens the door for substantial energy storage and power delivery for electronic microsystems.

show abstract

Section: D-integrated Energy Storage Capacitorsmentioning

confidence: 99%