Antiferroelectric thin films phase diagrams

Eliseev, Eugene A.; Glinchuk, M. D.; Morozovska, Anna N.

doi:10.1080/01411590601092654

Cited by 6 publications

(6 citation statements)

References 11 publications

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“…Eliseev et al have considered phenomenological calculation for AFEs and predicted the loss of double hysteresis loops with thin-film thickness. 75 An alternative prediction was made using firstprinciples calculation by Mani et al, where a size-driven phase transition from AFE (PbZrO 3 ) to a FE phase in nanoscale epitaxial thin films under short circuit conditions. These predictions at this time have not been experimentally verified, as sufficiently thin films to test this prediction have not been produced to sufficient quality, and free of strain effects.…”

Section: Size Effects In Afesmentioning

confidence: 99%

“…Cross and Okada formulated a consistent continuum phenomenological description of AFE phase transitions by introducing an AFE vector order parameter (� ⃗ q) in addition to the FE vector order parameter ( � ⃗ p), which can be related to the two-sublattice spontaneous polarizations, that is, 75,82,83 A similar model was presented by Balashova and Tagantsev by coupling a structural and FE order parameter to describe the FE to AFE phase transition and corresponding dielectric responses under applied electric fields. 84 It should be emphasized that it is entirely possible there might exist AFE phases in which there are more than two sublattices that have finite spontaneous polarization values.…”

Section: Sublattice Polarizationmentioning

confidence: 99%

“…Intrinsic size effects are related to changes that are associated with the nature of the phase transition, including the transition temperature, diffuseness of the transitions, and magnitudes of the anomalous properties related to the phase transition. Eliseev et al have considered phenomenological calculation for AFEs and predicted the loss of double hysteresis loops with thin‐film thickness 75 . An alternative prediction was made using first‐principles calculation by Mani et al, where a size‐driven phase transition from AFE (PbZrO 3 ) to a FE phase in nanoscale epitaxial thin films under short circuit conditions.…”

Section: Empirical Property Characteristics Associated With An Afe Phasementioning

confidence: 99%

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Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

et al. 2021

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Antiferroelectric (AFE) materials are of great interest owing to their scientific richness and their utility in high-energy density capacitors. Here, the history of AFEs is reviewed, and the characteristics of antiferroelectricity and the phase transition of an AFE material are described. AFEs are energetically close to ferroelectric (FE) phases, and thus both the electric field strength and applied stress (pressure) influence the nature of the transition. With the comparable energetics between the AFE and FE phases, there can be a competition and frustration of these phases, and either incommensurate and/or a glassy (relaxor) structures may be observed. The phase transition in AFEs can also be influenced by the crystal/grain size, particularly at nanometric dimensions, and may be tuned through the formation of solid solutions. There have been extensive studies on the perovskite family of AFE materials, but many other crystal structures host AFE behavior, such as CuBiP 2 Se 6 . AFE applications include DC-link capacitors for power electronics, defibrillator capacitors, pulse power devices, and electromechanical actuators. The paper concludes with a perspective on the future needs and opportunities with respect to discovery, science, and applications of AFE. K E Y W O R D S applications, dielectric materials/properties, ferroelectricity/ferroelectric materials, phase transition F I G U R E 3 Antiferroelectric double hysteresis loops in (A) Pb(Lu 0.5 Nb 0.5 )O 3 and (B) the temperature-dependent critical field in it (replotted from Ref. [30]). (C) shows the phase diagram of PbZrO 3 as a function of temperature and electrical field (replotted from Ref.

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Section: Size Effects In Afesmentioning

confidence: 99%

Section: Sublattice Polarizationmentioning

confidence: 99%

Section: Empirical Property Characteristics Associated With An Afe Phasementioning

confidence: 99%

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Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

et al. 2021

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“…Various approaches within the mean-field approximation and using Ising-type Hamiltonians have been developed to unveil the possible interactions taking place in crystals showing FE and AFE behaviors including defect related phenomena. [1][2][3][4][5][6][7][8][9][10][11] Moreover, superlattice and bilayer structures containing FE and AFE components have been both experimentally and theoretically analyzed to compare the impact of interfaces on electrical properties and hysteresis loop shapes. [11][12][13][14][15] Phenomenological approaches and mean-field approximation for the Ising model were adopted where the pseudospin of site i is a function of the average internal field due to the presence of neighboring pseudospins, and where the interaction energy of fluctuations of the spin variables around the mean-value is neglected.…”

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confidence: 99%

Antiferroelectric hysteresis loops with two exchange constants using the two dimensional Ising model

Misirlioglu

Pintilie

Boldyreva

et al. 2007

Applied Physics Letters

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Monte-Carlo simulations are carried out to reproduce hysteresis loops of antiferroelectric single crystals using an Ising Hamiltonian in two dimensions where pseudospin interactions are defined by two constants. It is shown that with this approach, hysteresis loops can be obtained in very good qualitative agreement with the experiments. While our approach is similar to that of Milhazes et al. ͓Phys. Status Solidi B 242, 1141 ͑2005͔͒, we also demonstrate that the hysteresis loop shapes heavily depend on the ratio of the electrostaticlike term to the intrinsic Hamiltonian of the system.

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“…A significant number of studies are published focusing on the phase stabilities of AFEs and AFE coupling at interfaces of multicomponent systems through the hysteresis shapes they exhibit as well as coexistence of the FE and AFE phases in a single composition [1][2][3][4][5][6][7][8][9][10][11][12]. In a practical sense, multilayers of FE and AFE components such as PbZr (1-x) Ti x O 3 -PbZrO 3 (PZT-PZ) or PbTiO 3 -PbZrO 3 (PT-PZ) have attracted interest as these structures were shown to exhibit high dielectric constants for critical compositional frequencies when in multilayer form [13][14][15][16][17].…”

Section: Introductionmentioning

confidence: 99%

Influence of long-range dipolar interactions on the phase stability and hysteresis shapes of ferroelectric and antiferroelectric multilayers

et al. 2009

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Phase transition and field driven hysteresis evolution of a two-dimensional Ising grid consisting of ferroelectric-antiferroelectric multilayers that take into account the long range dipolar interactions were simulated by a Monte-Carlo method. Simulations were carried out for a 1 ? 1 bilayer and a 5 ? 5 superlattice. Phase stabilities of components comprising the structures with an electrostatic-like coupling term were also studied. An electrostatic-like coupling, in the absence of an applied field, can drive the ferroelectric layers toward 180°d omains with very flat domain interfaces mainly due to the competition between this term and the dipole-dipole interaction. The antiferroelectric layers do not undergo an antiferroelectric-to-ferroelectric transition under the influence of an electrostatic-like coupling between layers as the ferroelectric layer splits into periodic domains at the expense of the domain wall energy. The long-range interactions become significant near the interfaces. For high periodicity structures with several interfaces, the interlayer long-range interactions substantially impact the configuration of the ferroelectric layers while the antiferroelectric layers remain quite stable unless these layers are near the Neel temperature. In systems investigated with several interfaces, the hysteresis loops do not exhibit a clear presence of antiferroelectricity that could be expected in the presence of anti-parallel dipoles, i.e., the switching takes place abruptly. Some recent experimental observations in ferroelectric-antiferroelectric multilayers are discussed where we conclude that the different electrical properties of bilayers and superlattices are not only due to strain effects alone but also due to long-range interactions. The latter manifests itself particularly in superlattices where layers are periodically exposed to each other at the interfaces.

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Antiferroelectric thin films phase diagrams

Cited by 6 publications

References 11 publications

Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

Antiferroelectrics: History, fundamentals, crystal chemistry, crystal structures, size effects, and applications

Antiferroelectric hysteresis loops with two exchange constants using the two dimensional Ising model

Influence of long-range dipolar interactions on the phase stability and hysteresis shapes of ferroelectric and antiferroelectric multilayers

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