Antiferroelectric titanium-doped zirconia thin films deposited via HiPIMS for highly efficient electrocaloric applications

Liu, Yuhua; Wang, Po-Chun; Lin, Li-Hung; Wang, Jer‐Chyi

doi:10.1016/j.jeurceramsoc.2020.12.041

Cited by 9 publications

(4 citation statements)

References 56 publications

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“…The increase of T/(M + T) ratio is favorable to the enhancement of P max . , Furthermore, the antiferroelectricity in fluorite structure oxides (e.g., HfO 2 and ZrO 2 ) is believed to be originated from the phase transformation from nonpolar T-phase to polar O-phase under an external electric field. , However, the most stable crystal structure in ZrO 2 is the M-phase below 1100 °C . In order to stabilize the O-phase or T-phase in ZrO 2 thin films, impurity doping is usually used to suppress the formation of the most stable M-phase. , Lee et al reported that in their study, the dopant size affected the relative stability of the metastable crystalline phases (T and O phases) in HfO 2 based on computational methods . The dopants smaller than Hf, such as Ti, Al, and Si, decreased the relative free energy of the T-phase more than that of the cubic phase .…”

Section: Resultsmentioning

confidence: 99%

“…33 In order to stabilize the O-phase or T-phase in ZrO 2 thin films, impurity doping is usually used to suppress the formation of the most stable M-phase. 34,35 Lee et al reported that in their study, the dopant size affected the relative stability of the metastable crystalline phases (T and O phases) in HfO 2 based on computational methods. 36 The dopants smaller than Hf, such as Ti, Al, and Si, decreased the relative free energy of the T-phase more than that of the cubic phase.…”

Section: W E P Dmentioning

confidence: 99%

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Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO₂ Antiferroelectric Films for Energy Storage Capacitors

Zheng,

He,

Zhu

et al. 2023

ACS Appl. Electron. Mater.

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Zr-based antiferroelectric (AFE) materials with a fluorite structure are promising candidates for replacing conventional dielectric materials in energy storage devices. However, single ZrO 2 exhibits an unsatisfactory energy storage performance. In this work, AFE Ti-doped ZrO 2 (ZTO) and Ti,Si-doped ZrO 2 (ZTSO) dielectrics are prepared using the plasma-enhanced atomic layer deposition (PEALD) technique. By adjusting the Ti and Si doping content in the dielectric, a significant improvement in the energy storage performance of the ZrO 2 -based AFE dielectric capacitor is achieved. For the ZTSO capacitor with Ti/Zr = 1/12 and Si/(Si + Zr + Ti) = 1/27, the optimal energy storage performance with energy storage density (ESD, 68.59 J/cm 3 ) and energy storage efficiency (ESE, 67.63%) is obtained. Compared with the Si-undoped capacitor, the ESD and ESE are enhanced by 14.49 and 88.89%, respectively. Finally, a three-dimensional (3D) ZTSO dielectric capacitor based on an AAO template with an aspect ratio of 100:1 demonstrates an ESD of up to 3123.53 J/cm 3 and an ESE of 66.19%. Meanwhile, the 3D dielectric capacitor reveals an excellent electric field cycling endurance of up to 10 8 cycles and superior temperature stability.

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Section: Resultsmentioning

confidence: 99%

Section: W E P Dmentioning

confidence: 99%

Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO₂ Antiferroelectric Films for Energy Storage Capacitors

Zheng,

He,

Zhu

et al. 2023

ACS Appl. Electron. Mater.

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“…A HiPIMS process can be characterized by a physical vapor deposition (PVD) technique that utilizes highly-energetic pulses at a low-duty cycle, applied to a conventional PMS magnetron sputtering process. HiPIMS can be characterized by highly ionized fluxes of film-forming particles and enhanced energies of the ions bombarding the growing films, resulting in structural changes and densification without a substrate bias or more effortless scalability to an industrial level [ 18 , 19 , 20 , 21 ]. However, experimental studies of HiPIMS materials and their potential applications in gate dielectric layers for MOS structures and devices are notably lacking.…”

Section: Introductionmentioning

confidence: 99%

Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfOxNy) Thin Films

et al. 2023

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This work demonstrated the optimization of HiPIMS reactive magnetron sputtering of hafnium oxynitride (HfOxNy) thin films. During the optimization procedure, employing Taguchi orthogonal tables, the parameters of examined dielectric films were explored, utilizing optical methods (spectroscopic ellipsometry and refractometry), electrical characterization (C-V, I-V measurements of MOS structures), and structural investigation (AFM, XRD, XPS). The thermal stability of fabricated HfOxNy layers, up to 800 °C, was also investigated. The presented results demonstrated the correctness of the optimization methodology. The results also demonstrated the significant stability of hafnia-based layers at up to 800 °C. No electrical parameters or surface morphology deteriorations were demonstrated. The structural analysis revealed comparable electrical properties and significantly greater immunity to high-temperature treatment in HfOxNy layers formed using HiPIMS, as compared to those formed using the standard pulsed magnetron sputtering technique. The results presented in this study confirmed that the investigated hafnium oxynitride films, fabricated through the HiPIMS process, could potentially be used as a thermally-stable gate dielectric in self-aligned MOS structures and devices.

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“…The main peaks at 530.22 and 531.10 eV were attributed to the Hf–O and Al–O bonding peaks, respectively. The other peaks corresponded to the existence of oxygen vacancies (V O ). − To reveal the correlation between surface morphology and Al content in HfAlO thin films, atomic force microscopy (AFM) images were obtained at different Al contents (Figure S4). Surface morphology was influenced by the lattice structure.…”

mentioning

confidence: 99%

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

Wei

Meng

et al. 2023

Nano Lett.

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Hafnium oxide (HfO 2 )-based ferroelectric tunnel junctions (FTJs) have been extensively evaluated for high-speed and low-power memory applications. Herein, we investigated the influence of Al content in HfAlO thin films on the ferroelectric characteristics of HfAlO-based FTJs. Among HfAlO devices with different Hf/Al ratios (20:1, 34:1, and 50:1), the HfAlO device with Hf/Al ratio of 34:1 exhibited the highest remanent polarization and excellent memory characteristics and, thereby, the best ferroelectricity among the investigated devices. Furthermore, first-principal analyses verified that HfAlO thin films with Hf/Al ratio of 34:1 promoted the formation of the orthorhombic phase against the paraelectric phase as well as alumina impurities and, thus, enhanced the ferroelectricity of the device, providing theoretical support for supporting experimental results. The findings of this study provide insights for developing HfAlO-based FTJs for next-generation in-memory computing applications.

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Antiferroelectric titanium-doped zirconia thin films deposited via HiPIMS for highly efficient electrocaloric applications

Cited by 9 publications

References 56 publications

Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO₂ Antiferroelectric Films for Energy Storage Capacitors

Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO₂ Antiferroelectric Films for Energy Storage Capacitors

Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfOxNy) Thin Films

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

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Antiferroelectric titanium-doped zirconia thin films deposited via HiPIMS for highly efficient electrocaloric applications

Cited by 9 publications

References 56 publications

Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO2 Antiferroelectric Films for Energy Storage Capacitors

Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO2 Antiferroelectric Films for Energy Storage Capacitors

Studies of Electrical Parameters and Thermal Stability of HiPIMS Hafnium Oxynitride (HfOxNy) Thin Films

The Doping Effect on the Intrinsic Ferroelectricity in Hafnium Oxide-Based Nano-Ferroelectric Devices

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Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO₂ Antiferroelectric Films for Energy Storage Capacitors

Plasma-Enhanced Atomic Layer-Deposited Ti,Si-Doped ZrO₂ Antiferroelectric Films for Energy Storage Capacitors