Antiferromagnetic Domain Wall Motion Induced by Spin Waves

Tveten, Erlend Grytli; Qaiumzadeh, Alireza; Brataas, Arne

doi:10.1103/physrevlett.112.147204

Cited by 169 publications

(176 citation statements)

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“…When circularly polarized, the transfer of angular momentum causes the wall to precess away from the magnon source, resulting in reflection and redshift at high and low magnon intensities, respectively. With linear polarized magnons, no spin transfer occurs (both circularly polarized magnon states are equally populated) and instead a viscous force associated with magnon damping drags the wall toward the magnon source (Tveten, Qaiumzadeh, and Brataas, 2014).…”

Section: Thermally Induced Domain-wall Motionmentioning

confidence: 99%

“…A onedimensional domain wall in an easy-axis antiferromagnet possesses not only the kinetic energy and inertia associated with its translational motion, but also rotational energy and moment of inertia associated with the precession of the order parameter at the domain-wall center about the easy axis (Kim, Tserkovnyak, and Tchernyshyov, 2014). The coupled rotational and translational dynamics of such domain walls, as well as their interactions with spin waves [which can induce their motion (Kim, Tserkovnyak, and Tchernyshyov, 2014;Tveten, Qaiumzadeh, and Brataas, 2014)], have the Lorentz symmetry [see Eq. (17) and related text].…”

Section: Moving Magnetic Textures By Spin-transfer Torquementioning

confidence: 99%

“…Tveten, Qaiumzadeh, and Brataas (2014) and Kim, Tserkovnyak, and Tchernyshyov (2014) addressed the motion of a uniaxial antiferromagnetic wall driven by magnons. They identified three main mechanisms responsible for driving domain-wall motion: transfer of angular momentum (¼2ℏ), reflection against the wall, and redshift of the magnon frequency corresponding to a net transfer of momentum (Kim, Tserkovnyak, and Tchernyshyov, 2014).…”

Section: Thermally Induced Domain-wall Motionmentioning

confidence: 99%

“…When the antiferromagnetic texture couples to electronic (Hals, Tserkovnyak, and Brataas, 2011;Swaving and Duine, 2011; or magnonic (Kim, Tserkovnyak, and Tchernyshyov, 2014;Tveten, Qaiumzadeh, and Brataas, 2014) spin flows j S , the dynamic equations derived from the Lagrangian, Eq. (14), acquire additional torques τ…”

Section: Moving Magnetic Textures By Spin-transfer Torquementioning

confidence: 99%

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Antiferromagnetic spintronics

et al. 2018

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Antiferromagnetic materials could represent the future of spintronic applications thanks to the numerous interesting features they combine: they are robust against perturbation due to magnetic fields, produce no stray fields, display ultrafast dynamics, and are capable of generating large magnetotransport effects. Intense research efforts over the past decade have been invested in unraveling spin transport properties in antiferromagnetic materials. Whether spin transport can be used to drive the antiferromagnetic order and how subsequent variations can be detected are some of the thrilling challenges currently being addressed. Antiferromagnetic spintronics started out with studies on spin transfer and has undergone a definite revival in the last few years with the publication of pioneering articles on the use of spin-orbit interactions in antiferromagnets. This paradigm shift offers possibilities for radically new concepts for spin manipulation in electronics. Central to these endeavors are the need for predictive models, relevant disruptive materials, and new experimental designs. This paper reviews the most prominent spintronic effects described based on theoretical and experimental analysis of antiferromagnetic materials. It also details some of the remaining bottlenecks and suggests possible avenues for future research. This review covers both spin-transfer-related effects, such as spin-transfer torque, spin penetration length, domain-wall motion, and "magnetization" dynamics, and spin-orbit related phenomena, such as (tunnel) anisotropic magnetoresistance, spin Hall, and inverse spin galvanic effects. Effects related to spin caloritronics, such as the spin Seebeck effect, are linked to the transport of magnons in antiferromagnets. The propagation of spin waves and spin superfluids in antiferromagnets is also covered.

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Section: Thermally Induced Domain-wall Motionmentioning

confidence: 99%

Section: Moving Magnetic Textures By Spin-transfer Torquementioning

confidence: 99%

Section: Thermally Induced Domain-wall Motionmentioning

confidence: 99%

Section: Moving Magnetic Textures By Spin-transfer Torquementioning

confidence: 99%

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Antiferromagnetic spintronics

et al. 2018

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“…[4][5][6][7][8] These proposals have led to an intense research activity in the area of current-induced DW dynamics in both antiand ferromagnets. [9][10][11][12][13] However, to manipulate DWs one needs to first create them. Currently, DWs are injected from one end into a nano-wire by applying a magnetic field.…”

mentioning

confidence: 99%

Current-driven periodic domain wall creation in ferromagnetic nanowires

et al. 2016

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We predict the electrical generation and injection of domain walls into a ferromagnetic nano-wire without the need of an assisting magnetic field. Our analytical and numerical results show that above a critical current jc domain walls are injected into the nano-wire with a period T ∼ (j − jc) −1/2 . Importantly, domain walls can be produced periodically even in a simple exchange ferromagnet with uniaxial anisotropy, without requiring any standard "twisting" interaction like DzyaloshinskiiMoriya or dipole-dipole interactions. We show analytically that this process and the period exponents are universal and do not depend on the peculiarities of the microscopic Hamiltonian. Finally we give a specific proposal for an experimental realization.Recent proposals for the next generation of magnetic memory devices 1-3 rely on the ability to manipulate the position and orientation of domain walls (DW) in ferromagnetic nano-wires by electric current.4-8 These proposals have led to an intense research activity in the area of current-induced DW dynamics in both antiand ferromagnets.9-13 However, to manipulate DWs one needs to first create them. Currently, DWs are injected from one end into a nano-wire by applying a magnetic field. In this work we propose a technique to controllably and reliably inject the DWs into nano-wires by just applying a DC electric current without the need of magnetic fields. Our finding leads to the possibility to make an "all electric" DW-dynamics-based spintronic devices.Within this paper we consider a magnetic nano-wire where at one end the magnetization is fixed (e.g., by an adjacent permanent ferromagnet) along a different direction than the anisotropy direction of the wire (see Fig. 1). Close to the fixed end, the magnetization will twist naturally on a length scale defined by the interplay of the fixed magnetization and the anisotropy strength and in the plane defined by the direction of the fixed magnetization and the anisotropy direction. We show analytically and numerically that for DC currents larger than a critical current j c even such a simple structure becomes unstable, and DWs are produced periodically with a periodThe instability and the phenomena of periodic, current-induced DW production can be easily explained (see Fig. 1): When ramping up the current strength, the current will i) twist the magnetic structure around the anisotropy direction and ii) elongate the texture close the pinned end. For currents j > j c the magnetic structure is "twisted off" and produces a DW which then moves along the wire.We demonstrate that under broad conditions this effect does not depend on the details of the microscopic magnetic Hamiltonian and does not require any "twisting" terms in the Hamiltonian such as Dzyaloshinskii-Moriya (DMI) or dipole-dipole interactions. We compute the critical current analytically and confirm the results numerically for a specific microscopic Hamiltonian. In the Without current (j = 0, top) the configuration is half of a planar DW centered at x = 0; for j < jc the domai...

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Anomalous Anisotropic Magnetoresistance of Antiferromagnetic Epitaxial Bimetallic Films: Mn₂Au and Mn₂Au/Fe Bilayers

Abid

Kalitsov

et al. 2016

Adv Funct Materials

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wileyonlinelibrary.comtraditional wholly ferromagnetic (FM) spintronic devices. [1][2][3] The reduced stray fi elds and faster spin dynamics of antiferomagnitic elements would allow further miniaturization with less cross-talk leading to faster higher density memory. The fast-evolving fi eld of antiferromagnetic spintronics is being pursued on many fronts, Núñez et al. studied spin torque and giant magnetoresistance (MR) in antiferromagnetic metals, [ 4 ] Hals et al. derived a phenomenological theory for current-induced dynamics in antiferromagnets, [ 5 ] and Shvets et al. [ 6 ] and Chshiev and co-workers [ 7 ] discussed the use of an antiferromagnetic dielectric layer as a tunneling barrier. More recently theoretical studies have been supported and complemented by steady experimental progress, the antiferromagnetic material IrMn has been utilized in demonstrating the possibility of producing a 100% spin-valve-like signal in an IrMnbased tunnel junction [ 8 ] and in the electrical measurement of antiferromagnetic moments in IrMn/NiFe stacks. [ 9 ] Lately, signifi cant strides have been made showing the practicality and versatility of antiferromagnetic spintronics. Pan and co-workers Recently intensive efforts have been devoted to the emerging fi eld of antiferromagnetic (AFM) spintronics, where ferromagnetic electrodes are substituted by antiferromagnets. This study investigates the anisotropic magnetoresistance (AMR) of epitaxial tetragonal antiferromagnetic bimetallic fi lms: Mn 2 Au and Mn 2 Au/Fe bilayers. An anomalous AMR effect with additional peaks is observed. This study theoretically and experimentally demonstrates that the AFM spins of Mn 2 Au can be viewed and controlled at room temperature, and this is achievable with a notably relatively small magnetic fi eld of 200 mT. Strong hybridization between Au and Mn, and strong modifi cation of the intrinsic quadratic anisotropy of Mn 2 Au from interfacial biquadratic anisotropy result in an additional anomalous AMR component of 1%. The fi ndings suggest that Mn 2 Au fi lms can be used in room temperature antiferromagnetic spintronics.

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Antiferromagnetic Domain Wall Motion Induced by Spin Waves

Cited by 169 publications

References 46 publications

Antiferromagnetic spintronics

Antiferromagnetic spintronics

Current-driven periodic domain wall creation in ferromagnetic nanowires

Anomalous Anisotropic Magnetoresistance of Antiferromagnetic Epitaxial Bimetallic Films: Mn₂Au and Mn₂Au/Fe Bilayers

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Antiferromagnetic Domain Wall Motion Induced by Spin Waves

Cited by 169 publications

References 46 publications

Antiferromagnetic spintronics

Antiferromagnetic spintronics

Current-driven periodic domain wall creation in ferromagnetic nanowires

Anomalous Anisotropic Magnetoresistance of Antiferromagnetic Epitaxial Bimetallic Films: Mn2Au and Mn2Au/Fe Bilayers

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Anomalous Anisotropic Magnetoresistance of Antiferromagnetic Epitaxial Bimetallic Films: Mn₂Au and Mn₂Au/Fe Bilayers