Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

Napari, Mari; Huq, Tahmida N.; Maity, Tuhin; Gomersall, Daisy; Niang, Kham M.; Barthel, Armin; Thompson, Juliet; Kinnunen, Sami; Arstila, Kai; Sajavaara, Timo; Hoye, Robert L. Z.; Flewitt, Andrew J.; MacManus‐Driscoll, Judith L.

doi:10.1002/inf2.12076

Cited by 22 publications

(18 citation statements)

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“…with Li) or by creating a Ni vacancies by increasing the oxygen concentration in the films (vide supra). 19 We are confident however that with respect to the process that we report here, of the possible the variables which will impact p-type behaviour and stoichiometry (e.g. pulse lengths, plasma power etc), the temperature at which deposition occurs is by far the most critical: High enough to enable complete surface reactions but low enough to prevent precursor decomposition and contamination.…”

Section: Resultsmentioning

confidence: 77%

“…The strongly oxidising plasma facilitates ALD reactions for precursors which are volatile but lack the required chemical reactivity for thermal ALD, such as nickel metallocenes and acetylacetonates. 19 To the best of our knowledge, only four studies have been completed using the cyclopentadienyl based systems; specifically nickelocene, [Ni{η 5…”

Section: Introductionmentioning

confidence: 99%

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Atomic scale surface modification of TiO₂ 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

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Section: Resultsmentioning

confidence: 77%

Section: Introductionmentioning

confidence: 99%

Atomic scale surface modification of TiO₂ 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

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“…Despite non‐stoichiometric composition and differences in microstructure, all the measured films showed antiferromagnetic behavior, measured as an exchange bias shift in in‐plane magnetic hysteresis at 2 K temperature (Figure 3D). 44 …”

Section: Effect Of Non‐stoichiometry On the Electrical And Magnetic Properties Of Nioxmentioning

confidence: 99%

“…D, In‐plane magnetic hysteresis loops of 6 nm Ni 80 Fe 20 / PEALD NiO x bi‐layer at 2 K. The field cooled (FC) hysteresis shows an exchange bias H x of −400/+500 Oe. Reproduced with permission from Napari et al 44 Copyright Wiley 2020…”

Section: Effect Of Non‐stoichiometry On the Electrical And Magnetic Properties Of Nioxmentioning

confidence: 99%

“…The resistivity of the films was ∼10 3 Ω cm, and the carrier concentration, determined by Mott‐Schottky analysis, was 1.6·10 18 cm −3 , with the corresponding hole mobility 3·10 −3 cm 2 V −1 second −1 46 . NiO x films grown with the same deposition system using a NiCpAllyl precursor and O 2 at 300°C were measured to be nonstoichiometric with Ni/O ratio of ~0.6 44 . The electrical properties of the films were determined with Hall effect measurements, and the carrier concentration was found to be ∼10 16 cm −3 , and mobility on the order of 0.1 cm 2 V −1 second −1 44 .…”

Section: Chemical Deposition Of Nickel Oxide Thin Filmsmentioning

confidence: 99%

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Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

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Nickel oxide (NiOx), a p‐type oxide semiconductor, has gained significant attention due to its versatile and tunable properties. It has become one of the critical materials in wide range of electronics applications, including resistive switching random access memory devices and highly sensitive and selective sensor applications. In addition, the wide band gap and high work function, coupled with the low electron affinity, have made NiOx widely used in emerging optoelectronics and p‐n heterojunctions. The properties of NiOx thin films depend strongly on the deposition method and conditions. Efficient implementation of NiOx in next‐generation devices will require controllable growth and processing methods that can tailor the morphological and electronic properties of the material, but which are also compatible with flexible substrates. In this review, we link together the fundamental properties of NiOx with the chemical processing methods that have been developed to grow the material as thin films, and with its application in electronic devices. We focus solely on thin films, rather than NiOx incorporated with one‐dimensional or two‐dimensional materials. This review starts by discussing how the p‐type nature of NiOx arises and how its stoichiometry affects its electronic and magnetic properties. We discuss the chemical deposition techniques for growing NiOx thin films, including chemical vapor deposition, atomic layer deposition, and a selection of solution processing approaches, and present examples of recent progress made in the implementation of NiOx thin films in devices, both on rigid and flexible substrates. Furthermore, we discuss the remaining challenges and limitations in the deposition of device‐quality NiOx thin films with chemical growth methods.

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Recent Advances in 2D Superconductors

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The emergence of superconductivity in 2D materials has attracted much attention and there has been rapid development in recent years because of their fruitful physical properties, such as high transition temperature (Tc), continuous phase transition, and enhanced parallel critical magnetic field (Bc). Tremendous efforts have been devoted to exploring different physical parameters to figure out the mechanisms behind the unexpected superconductivity phenomena, including adjusting the thickness of samples, fabricating various heterostructures, tuning the carrier density by electric field and chemical doping, and so on. Here, different types of 2D superconductivity with their unique characteristics are introduced, including the conventional Bardeen–Cooper–Schrieffer superconductivity in ultrathin films, high‐Tc superconductivity in Fe‐based and Cu‐based 2D superconductors, unconventional superconductivity in newly discovered twist‐angle bilayer graphene, superconductivity with enhanced Bc, and topological superconductivity. A perspective toward this field is then proposed based on academic knowledge from the recently reported literature. The aim is to provide researchers with a clear and comprehensive understanding about the newly developed 2D superconductivity and promote the development of this field much further.

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Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

Cited by 22 publications

References 36 publications

Atomic scale surface modification of TiO₂ 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

Atomic scale surface modification of TiO₂ 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

Recent Advances in 2D Superconductors

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Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

Cited by 22 publications

References 36 publications

Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

Atomic scale surface modification of TiO2 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

Nickel oxide thin films grown by chemical deposition techniques: Potential and challenges in next‐generation rigid and flexible device applications

Recent Advances in 2D Superconductors

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Atomic scale surface modification of TiO₂ 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis

Atomic scale surface modification of TiO₂ 3D nano-arrays: plasma enhanced atomic layer deposition of NiO for photocatalysis