Antilocalization at an oxide interface

Seiler, Patrick; Zabaleta, Jone; Wanke, R.; Mannhart, J.; Kopp, Thilo; Braak, Daniel

doi:10.1103/physrevb.97.075136

Cited by 18 publications

(28 citation statements)

References 86 publications

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“…We would like to mention that it will be interesting to see the effect of multiple carrier nature on magnetoresistance by tuning the carrier density through applied pressure or electrostatic gate. [60] We have already demonstrated the existence of non-trivial Berry's phase in EuO-KTO from the analysis of SdH oscillations. Non-trivial Berry's phase is usually realized for the charge carriers having reciprocal space cyclotron orbits enclosing a Dirac point.…”

Section: Doi: 101002/qute202000081mentioning

confidence: 83%

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Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Kumar

Wadehra²,

Tomar³

et al. 2020

Adv Quantum Tech

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The momentum‐dependent splitting of spin‐bands in an electronic system is known as the “Rashba effect.” Systems with the Rashba effect possess a Dirac point in momentum space, which may act as a source of Berry's phase for the conduction electrons of such system. Herein, the Shubnikov–de Haas oscillations (SdH) at the conducting interface of EuO–KTaO3 (KTO) are reported. The observed SdH oscillations suggest the presence of two Fermi surfaces. For both Fermi surfaces, the presence of a Berry's phase is seen. Strong spin–orbit coupling is also observed in this system. The existence of two Fermi surfaces with Berry's phase along with the signature of strong spin–orbit coupling suggest the formation of Rashba spin‐split bands. As in topological insulators, two‐fold planar Hall effect and anisotropic magnetoresistance are also observed in EuO–KTO. Analyzing the SdH, Hall, and magnetoresistance data, the authors draw a possible band diagram near the Fermi surface.

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Section: Doi: 101002/qute202000081mentioning

confidence: 83%

Section: Figurementioning

confidence: 99%

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Kumar

Wadehra²,

Tomar³

et al. 2020

Adv Quantum Tech

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“…Magnetotransport data taken on various BaPbO 3 thin film samples show no indication of multi-band behavior (see Appendix A). This is an advantage over the more complicated evaluation of multi-band systems, where not only the Hall effect 30 , but also supervening aspects of quantum corrections have to be considered 39,40 . The logarithmic dependences we find in the progression of the resistance towards lower temperatures are analyzed and quantitatively described by the quantum corrections discussed in Sec.…”

Section: Resultsmentioning

confidence: 99%

Electronic transport in thin films of BaPbO3 : Unraveling two-dimensional quantum effects

et al. 2019

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Recently, perovskite related BaPbO3 has attracted attention due to its hidden topological properties and, moreover, has been used as a thin layer in heterostructures to induce two-dimensional superconductivity. Here we investigate the normal state electronic transport properties of thin films of BaPbO3. Temperature and magnetic field dependent sheet resistances are strongly affected by two-dimensional quantum effects. Our analysis decodes the interplay of spin-orbit coupling, disorder, and electron-electron interaction in this compound. Similar to recently discussed topological materials, we find that weak antilocalization is the dominant protagonist in magnetotransport, whereas electron-electron interactions play a pronounced role in the temperature dependence. A systematic understanding of these quantum effects is essential to allow for an accurate control of properties not only of thin films of BaPbO3, but also of topological heterostructures.

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“…However, in the case of a non-zero single winding contribution N S = 1, which is typical for Rashba and Dresselhaus effects, the results deviate considerably from Hikami-Larkin-Nagaoka theory [20], caused by transitions between dense Landau levels in a magnetic field. Correspondingly, the specifics of the Fermi surface have a strong impact on the magneto-conductivity for twodimensional electron systems with SOC [15].…”

mentioning

confidence: 99%

“…Previous fits for experimental data gained at LaAlO 3 /SrTiO 3 interfaces identified a spin winding N S = 3 in the multi-band regime [15]. More recently, experiments near the Lifshitz transition in LaAlO 3 /SrTiO 3 found indications for a dominant spin winding N S = 1 in the single-band regime, jointly with a considerable N S = 3 contribution beyond the Lifshitz transition in the multi-band regime [42].…”

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confidence: 99%

Antilocalization in oxides: Effective spin- 32 model

et al. 2019

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Weak anti-localization offers an experimental tool to address spin-orbit coupling of twodimensional oxide surfaces and interfaces via magneto-transport. To overcome the shortcomings of the formulation for single-band spin-1 /2 electrons, we consider an effective three-band model that allows a decomposition into a pseudo-spin representation 1 /2 ⊕ 3 /2. Whereas the well-established spin-1 /2 transport signature results from the singlet and triplet sectors in the Cooperon equation, a new structure originates from the quintet and septet sectors generated by the spin 3 /2 ⊗ 3 /2 representation.

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Antilocalization at an oxide interface

Cited by 18 publications

References 86 publications

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Electronic transport in thin films of BaPbO3 : Unraveling two-dimensional quantum effects

Antilocalization in oxides: Effective spin- 32 model

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Antilocalization at an oxide interface

Cited by 18 publications

References 86 publications

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO3

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO3

Electronic transport in thin films of BaPbO3 : Unraveling two-dimensional quantum effects

Antilocalization in oxides: Effective spin- 32 model

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Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃

Observation of Shubnikov–de Haas Oscillations, Planar Hall Effect, and Anisotropic Magnetoresistance at the Conducting Interface of EuO–KTaO₃