Antimonide Type-II “W” Lasers

Vurgaftman, I.; Bewley, W. W.; Canedy, C. L.; Kim, C. S.; Lindle, J. R.; Kim, M.; Meyer, J. R.

doi:10.1007/1-84628-209-8_5

Cited by 6 publications

(8 citation statements)

References 101 publications

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“…Type-II devices progressed more quickly due to the reduced Auger recombination rates stemming from the spatial separation of electrons and holes in the staggered type-II band alignments [46]. ICLs lend themselves well to cascaded designs, much like QCLs, the difference being that the optical transitions occur band-to-band [40], [47], [48]. The development of these devices has been rapid.…”

Section: Highly Strained Mid-infrared Type-i Diode Lasers On Gasbmentioning

confidence: 99%

“…Continuous wave ICLs were limited to cryogenic operation as late as 2004 [49]. Current devices now operate continuous wave at room temperature over much of the 3-5 µm range [29], [30], [48], [55]- [57]. However, the stability of device performance with temperature remains poor, as evidenced by the relatively low characteristic temperatures (T 0 ), suggesting significant Auger recombination effects at long wavelengths.…”

Section: Highly Strained Mid-infrared Type-i Diode Lasers On Gasbmentioning

confidence: 99%

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Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb

Sifferman

Nair

Salas

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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We describe how growth at low temperatures can enable increased active layer strain in GaSb-based type-I quantum-well diode lasers, with emphasis on extending the emission wavelength. Critical thickness and roughening limitations typically restrict the number of quantum wells that can be grown at a given wavelength, limiting device performance through gain saturation and related parasitic processes. Using growth at a reduced substrate temperature of 350 °°°°C, compressive strains of up to 2.8% have been incorporated into GaInAsSb quantum wells with GaSb barriers; these structures exhibited peak room-temperature photoluminescence out to 3.96 μm. Using this growth method, low-threshold ridge waveguide lasers operating at 20 °C and emitting at 3.4 μm in pulsed mode were demonstrated using 2.45% compressively strained GaInAsSb/GaSb quantum wells. These devices exhibited a characteristic temperature of threshold current of 50 K, one of the highest values reported for type-I quantum-well laser diodes operating in this wavelength range. This temperature stability is attributable to the increased valence band offset afforded by the high strain values, due to the simultaneously high quantum well indium and antimony mole fractions. Exploratory experiments using bismuth both as a surfactant during quantum well growth, as well as in dilute amounts incorporated into the crystal were also studied. Both methods appear promising avenues to surmount current strain-related limitations to laser performance and emission wavelength.

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Section: Highly Strained Mid-infrared Type-i Diode Lasers On Gasbmentioning

confidence: 99%

Section: Highly Strained Mid-infrared Type-i Diode Lasers On Gasbmentioning

confidence: 99%

Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb

Sifferman

Nair

Salas

et al. 2015

IEEE J. Select. Topics Quantum Electron.

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“…9 Pioneering work in this field has been presented by Meyer et al, Kudo et al, and Vurgaftman et al who introduced type-II "W"-material systems as active region of a laser setup. [10][11][12] These structures consist of a sandwich configuration involving two different materials (see Fig. 1) whose composition and well width can be adjusted independently to achieve the desired type-II transition energy.…”

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confidence: 99%

Novel type-II material system for laser applications in the near-infrared regime

et al. 2015

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The design and experimental realization of a type-II “W”-multiple quantum well heterostructure for emission in the λ > 1.2 μm range is presented. The experimental photoluminescence spectra for different excitation intensities are analyzed using microscopic quantum theory. On the basis of the good theory–experiment agreement, the gain properties of the system are computed using the semiconductor Bloch equations. Gain values comparable to those of type-I systems are obtained.

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“…Over the last years, interband cascade lasers (ICLs) 1 have shown their ability to cover the wavelength region between 3.4 and 5.6 lm with devices operating in continuous wave (CW) mode at room temperature. 2,3 This was mainly achieved by a reduction of the threshold current density, which resulted from various design changes and optimal doping of the active region as well as the waveguide. A major breakthrough was reported in 2008: the first cw operation at room temperature.…”

mentioning

confidence: 99%

“…Right after the SCL growth, the substrate temperature was ramped down to 450 C. The cascade region published in Ref. 2 InAs. In order to rebalance the internally generated carriers, the four inner electron injector quantum wells were heavily n-type doped with Si to 5 Â 10 18 cm À3 .…”

mentioning

confidence: 99%

Interband cascade lasers with room temperature threshold current densities below 100 A/cm2

Weih¹,

Kamp²,

Höfling³

2013

Applied Physics Letters

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Interband Cascade Lasers (ICLs) with threshold current densities below 100 A/cm2 in pulsed operation at room temperature are presented. The laser structure comprises 10 active stages of 41 nm length, each stage containing a W-quantum well active region for emission in the spectral region around 3.6 μm. A comparison of devices with 6 and 10 stages shows that the latter have a reduced threshold due to an increased optical confinement factor, very competitive threshold power densities of 428 W cm−2 despite an increased threshold voltage and large differential slope efficiencies of 1390 mW/A. For a narrow ridge device, continuous wave operation is observed up to 65 °C.

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Antimonide Type-II “W” Lasers

Cited by 6 publications

References 101 publications

Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb

Highly Strained Mid-Infrared Type-I Diode Lasers on GaSb

Novel type-II material system for laser applications in the near-infrared regime

Interband cascade lasers with room temperature threshold current densities below 100 A/cm2

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