Antireflective characteristics of disordered GaAs subwavelength structures by thermally dewetted Au nanoparticles

Leem, Jung Woo; Yu, Jae Su; Song, Young Min; Lee, Y.T.

doi:10.1016/j.solmat.2010.09.038

Cited by 40 publications

(30 citation statements)

References 23 publications

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“…2b substantiates the conclusions already made in view of aforementioned narrowing and shift of plasmonic band in the reflection spectrum caused by annealing. For gold deposited on GaAs substrates similar behavior was reported in Leem et al 2011 25 . This is not surprising as the cohesive energy of gold (3.82 eV) is larger than that of silver (2.95 eV) 26 .…”

Section: Resultssupporting

confidence: 85%

Fabrication and characterization of the noble metal nanostructures on the GaAs surface

Gladskikh

Toropov

et al. 2016

SPIE Proceedings

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Self-assembled silver, gold, and copper nanostructures on the monocrystalline GaAs (100) wafer surface were obtained via physical vapor deposition and characterized by optical reflection spectroscopy, scanning electron microscopy, and current-voltage curve measurements. Reflection spectra of the samples with Ag equivalent thicknesses of 2, 5, 7.5, and 10 nm demonstrated wide plasmonic bands in the visible range of spectra. Thermal annealing of the nanostructures led to narrowing of the plasmonic bands of Au and Ag nanostructures caused by major transformations of the film morphology. While the as prepared films predominantly had a small scale labyrinth structure, after annealing well-separated nanoislands are formed on the gallium arsenide surface. A clear correlation between films morphology and their optical and electrical properties is elucidated. Annealing of the GaAs substrate with Ag nanostructures at 100 °C under control of the resistivity allowed us to obtain and fix the structure at the percolation threshold. It is established that the samples at the percolation threshold possess the properties of resistance switching and hysteresis.

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Section: Resultssupporting

confidence: 85%

Fabrication and characterization of the noble metal nanostructures on the GaAs surface

Gladskikh

Toropov

et al. 2016

SPIE Proceedings

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show abstract

“…2b substantiates the conclusions already made in view of aforementioned narrowing and shift of plasmonic band in the reflection spectrum caused by annealing. For gold deposited on GaAs substrates, similar behavior was reported in (Leem et al 2011). This is not surprising as the cohesive energy of gold (3.82 eV) is larger than that of silver (2.95 eV) (Kambe 1955).…”

Section: Resultssupporting

confidence: 81%

Correlation between structural, optical, and electrical properties of self-assembled plasmonic nanostructures on the GaAs surface

Gladskikh

Toropov

et al. 2015

J Nanopart Res

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Self-assembled silver nanostructures on the industry-grade monocrystalline GaAs (100) wafer surface were obtained via physical vapor deposition and characterized by optical reflection spectroscopy, scanning electron microscopy, and current-voltage curve measurements. Reflection spectra of the samples with Ag equivalent thicknesses of 5, 7.5, and 10 nm demonstrated wide plasmonic bands in the visible range of spectra. Thermal annealing of the nanostructures led to narrowing of the plasmonic bands caused by major transformations of the film morphology. While the As prepared films predominantly had a small-scale labyrinth structure, after annealing wellseparated silver nanoislands are formed on the gallium arsenide surface. A clear correlation between films morphology and their optical and electrical properties is elucidated. Annealing of the GaAs substrate with Ag nanostructures at 100°C under control of the resistivity allowed us to obtain and fix the structure at the percolation threshold. It is established that the samples at the percolation threshold possess the properties of resistance switching and hysteresis.

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“…1,4 It has been demonstrated that introducing nanostructures on semiconductor surfaces can significantly change the optical properties of the surfaces. For example, ordered/disordered nanostructures can dramatically reduce the reflectance of semiconductor surfaces [5][6][7] or improve the light extraction efficiency from light-emitting diodes. 8 THz waves interact very little with nanostructures because their wavelengths are much longer than the sizes of the structures.…”

Section: Characteristics Of Terahertz Pulses From Antireflective Gaasmentioning

confidence: 99%

“…The antireflective effect was explained well by the graded-refractive index profile of the tapered nano-pillars between air and a GaAs substrate. 7 Figure 4(a) shows the measured time-domain waveforms of THz pulses from the six samples and bare GaAs. Their spectral amplitudes are presented in Fig.…”

Section: Characteristics Of Terahertz Pulses From Antireflective Gaasmentioning

confidence: 99%

Characteristics of terahertz pulses from antireflective GaAs surfaces with nanopillars

Kang

Leem

Lee

et al. 2013

Journal of Applied Physics

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We investigated the characteristics of terahertz pulses generated from antireflective GaAs surfaces with nanopillars under femtosecond laser excitation. Although the antireflective nanostructures contribute to the enhancement of free photocarrier excitation in GaAs, they could reduce the transient photocurrent density and advance the start time of the photocurrent decay. Thus, the relative amplitudes of the high-frequency spectral components of terahertz pulses increased, whereas the energies of the pulses decreased. However, we showed that thinly distributed nanopillar structures could generate a short terahertz pulse without a reduction in the pulse energy.

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Antireflective characteristics of disordered GaAs subwavelength structures by thermally dewetted Au nanoparticles

Cited by 40 publications

References 23 publications

Fabrication and characterization of the noble metal nanostructures on the GaAs surface

Fabrication and characterization of the noble metal nanostructures on the GaAs surface

Correlation between structural, optical, and electrical properties of self-assembled plasmonic nanostructures on the GaAs surface

Characteristics of terahertz pulses from antireflective GaAs surfaces with nanopillars

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