Antiskyrmions and their electrical footprint in crystalline mesoscale structures

Abstract

Skyrmionics materials hold the potential for future information technologies, such as racetrack memories. Key to that advancement are skyrmionics systems that exhibit high tunability and scalability, with stored information being easy to read and write by means of all-electrical techniques. Topological magnetic excitations, such as skyrmions and antiskyrmions give rise to a characteristic topological Hall effect (THE) in electrical transport. However, an unambiguous transport signature of antiskyrmions, in both thin films and bulk samples has been challenging to date. Here we apply magnetosensitive microscopy combined with electrical transport to directly detect the emergence of antiskyrmions in crystalline microstructures of Mn1.4PtSn at room temperature. We reveal the THE of antiskyrmions and demonstrate its tunability by means of finite sizes, field orientation, and temperature. Our atomistic simulations and experimental anisotropy studies demonstrate the link between antiskyrmions and a complex magnetism that consists of competing ferro- and antiferromagnetic as well as chiral exchange interactions.