Antisolvent free deposition of lead–tin-based MAPbxSn1−x(I0.75Br0.25)3 perovskite with a wide range of bandgap variation

Howlader, C. Q.; Geerts, W.; Chen, Y. M.

doi:10.1557/s43579-024-00569-w

MRS Communications

2024

DOI: 10.1557/s43579-024-00569-w

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Antisolvent free deposition of lead–tin-based MAPbxSn1−x(I0.75Br0.25)3 perovskite with a wide range of bandgap variation

C. Q. Howlader,

W. Geerts,

Y. M. Chen

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Antisolvent free deposition of lead–tin-based MAPbxSn1−x(I0.75Br0.25)3 perovskite with a wide range of bandgap variation

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References 41 publications

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