AOC moving forward: the impact of materials behavior

Mathes, David T.; Guenter, James K.; Tatum, Jim A.; Johnson, R.H.; Hawkins, Bobby; Johnson, Chris J.; Hawthorne, Bobby

doi:10.1117/12.646447

Cited by 6 publications

(4 citation statements)

References 16 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A series of ESD tests on oxide VCSELs using a human body model [11], a machine model, and a charged device model were performed in order to grasp a material-level understanding of ESD-induced behavior. The VCSELs subjected to ESD were analyzed using focused ion beam microscopy together with transmission electron microscopy [12]- [14]. It was reported that the ESD events generated dislocation tangles with different shapes and locations, and most of the ESD-induced degradation originated from the oxide layer.…”

Section: Introductionmentioning

confidence: 99%

Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge

Kim¹,

Kim²,

Kim³

et al. 2008

ETRI Journal

View full text Add to dashboard Cite

Taeyong Kim et al. 833 The effect of forward and reverse electrostatic discharge (ESD) on the electro-optical characteristics of oxide vertical-cavity surface-emitting lasers is investigated using a human body model for the purpose of understanding degradation behavior. Forward ESD-induced degradation is complicated, showing three degradation phases depending on ESD voltage, while reverse ESD-induced degradation is relatively simple, exhibiting two phases of degradation divided by a sudden distinctive change in electro-optical characteristics. We demonstrate that the increase in the threshold current is mainly due to the increase in leakage current, nonradiative recombination current, and optical loss. The decrease in the slope efficiency is mainly due to the increase in optical loss.

show abstract

Section: Introductionmentioning

confidence: 99%

Degradation Behavior of 850 nm AlGaAs/GaAs Oxide VCSELs Suffered from Electrostatic Discharge

Kim¹,

Kim²,

Kim³

et al. 2008

ETRI Journal

View full text Add to dashboard Cite

show abstract

“…The 1310 nm long-wavelength VCSELs with InGaAsN quantum well were aged for 75 hours at 7.5mA and 150°C, and the dislocation arrays were observed by TEM. Furthermore, the arrays appear to lie along a line, and were larger in the oxide aperture and increasingly smaller farther from the oxide aperture [11] . In 2008, JDSU/Picolight has developed a commercial InGaNAs based long wavelength VCSEL for 10Gbps applications.…”

Section: Introductionmentioning

confidence: 95%

Degradation mechanism of 1310nm vertical cavity surface emission laser

Liao,

Zhang,

Liu

et al. 2023

AOPC 2023: AI in Optics and Photonics

View full text Add to dashboard Cite

“…PEM and OBIRCH can reveal damage locations, and their spot pattern can be differentiated simply. After fault isolation, P-V TEM can be performed to show the burnout locations [3].…”

Section: A Burnout Due To Esd Damagementioning

confidence: 99%