APEXRAD: low altitude orbit dose as a function of inclination, magnetic activity and solar cycle

Gussenhoven, M. S.; Mullen, E.G.; Bell, Jonathan; Madden, D.; Holeman, E.

doi:10.1109/23.659031

Cited by 14 publications

(8 citation statements)

References 11 publications

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“…From the APEXRAD mission, Gussenhoven [19] reports the yearly dose accumulation due to trapped protons and electrons to be 18.4 rad(Si) per hemisphere-which means 36.8 rad(Si) all around-for a satellite at 300 km altitude, 60 • inclination, and with 82 mil aluminum shielding. We can use these data to approximate the radiation environment for 200 km altitude and 100 mil shielding.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications

Allen

Petrosky

Orlando

2014

NAECON 2014 - IEEE National Aerospace and Electronics Conference

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This research predicts the effects of the natural radiation environment in low earth orbit on a 6T SRAM cell designed using the CMOS portion of a 130 nm BiCMOS technology. It is determined that this technology is quite sensitive to single event upset (SEU): at 200 km altitude and without shielding, the predicted SEU rate is 6.7×10 −3 bit −1 yr −1 ; at 2000 km altitude, the rate increases to 1.9×10 1 bit −1 yr −1 . Nonetheless, these results compare favorably to previously published SEU data [1], [2] regarding the bipolar portion of similar BiCMOS technology.

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Section: Simulation Results and Discussionmentioning

confidence: 99%

Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications

Allen

Petrosky

Orlando

2014

NAECON 2014 - IEEE National Aerospace and Electronics Conference

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“…Nevertheless, there have been reports that the NASA model might underestimate the dose and the radiation flux at low altitudes [8], [9]. It has also been noted that it is increasingly difficult to make comparisons of applications with AP8 and AE8 models at points more distant in time from the acquisition of the AP8 and AE8 data [8]. It should be interesting in this regard to compare the APEXRAD results with NASA models [8].…”

Section: Discussionmentioning

confidence: 94%

“…It may not be possible to accurately estimate the geospace radiation environment from the present dose experiment because it involves the conversion model of the threshold voltage change to the accumulated dose and the chord-length estimation has to be precise. Nevertheless, there have been reports that the NASA model might underestimate the dose and the radiation flux at low altitudes [8], [9]. It has also been noted that it is increasingly difficult to make comparisons of applications with AP8 and AE8 models at points more distant in time from the acquisition of the AP8 and AE8 data [8].…”

Section: Discussionmentioning

confidence: 98%

Model-data comparison of total dose experiment on KITSAT-1

SungJoon

Min

Shin³

et al. 2002

IEEE Trans. Nucl. Sci.

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Using a model developed for temperature-dependent irradiations, we analyze the results of the KITSAT-1 total dose experiment (TDE) accumulated during more than two years from September 1992 through December 1994. Monte Carlo simulations are adopted for the calculation of effective shielding thickness of the spacecraft at the position of TDE. With parameters obtained from a laboratory Co 60 -ray experiment, the model reproduces the observed threshold voltage changes quite successfully, including peculiar oscillations caused by temperature variations. The total dose received by TDE is estimated to be about 40% larger than the NASA predictions, in general agreement with the APEXRAD model.Index Terms-Magnetosphere, RADFET, shielding effect, temperature variation, total ionizing dose (TID).

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“…Yet the decisive determination of the exact total dose rate, separating the effect of oxide and interface traps from the thermal effects, has not been possible due to the lack of instrument capabilities. [15][16][17] We expect that SSRM can remove these assumptions and limitations and, in turn, improve estimations of the total ionizing dose to compare with the existing models and theories.…”

Section: Discussionmentioning

confidence: 99%

A Small Space Radiation Monitor Capable of Measuring Multiple I_SD-V_GSValues of MOSFET

Seon

Kim²,

SUNG³

et al. 2010

Journal of Nuclear Science and Technology

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A small space radiation monitor capable of taking measurements of gate voltages of MOSFET for various drain currents has been developed for flight experiments aboard satellites. Measuring multiple I SD -V GS values of MOSFET is expected to provide better understanding of the electronic response to ionizing radiation in space. In particular, separating the effects of oxide charge densities, interface charge densities, and temperatures is anticipated for the accurate determination of total ionizing dose. Description of the instrumentation for space-borne measurements is given, along with a summary of the anticipated results from this experiment.

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APEXRAD: low altitude orbit dose as a function of inclination, magnetic activity and solar cycle

Cited by 14 publications

References 11 publications

Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications

Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications

Model-data comparison of total dose experiment on KITSAT-1

A Small Space Radiation Monitor Capable of Measuring Multiple I_SD-V_GSValues of MOSFET

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APEXRAD: low altitude orbit dose as a function of inclination, magnetic activity and solar cycle

Cited by 14 publications

References 11 publications

Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications

Effects of non-ionizing radiation on a 130 nm CMOS SRAM for low earth orbit applications

Model-data comparison of total dose experiment on KITSAT-1

A Small Space Radiation Monitor Capable of Measuring Multiple ISD-VGSValues of MOSFET

Contact Info

Product

Resources

About

A Small Space Radiation Monitor Capable of Measuring Multiple I_SD-V_GSValues of MOSFET