Apparatus for Seebeck coefficient and electrical resistivity measurements of bulk thermoelectric materials at high temperature

Zhou, Zhenhua; Uher, Ctirad

doi:10.1063/1.1835631

Cited by 98 publications

(62 citation statements)

References 12 publications

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“…Using this device, we overcame possible sources of design and measurement errors such as the cold-finger effect, thermal-emf, and lead resistance [51,52]. The steady-state differential method was applied for the Seebeck coefficient measurements; a detailed description of this method is provided elsewhere [53,54].…”

Section: Methodsmentioning

confidence: 99%

Effect of grain size and porosity on phonon scattering enhancement of Ca3Co4O9

Gunes

Özenbaş

2015

Journal of Alloys and Compounds

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Section: Methodsmentioning

confidence: 99%

Effect of grain size and porosity on phonon scattering enhancement of Ca3Co4O9

Gunes

Özenbaş

2015

Journal of Alloys and Compounds

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“…This technique is quite important because GeTe undergoes a phase transition. The resistivity and Hall coefficient were measured using the Van der Pauw technique under a reversible magnetic field of 1.5 T. The Seebeck coefficient was obtained from the slope of the thermopower vs temperature gradient from 0 to 5 K. 68 The thermal diffusivity (D) was measured by a laser flash technique (model: LFA-457, Netzsch, Selb, Germany). A Dulong-Petit limit of the heat capacity (C p ) is used, which is consistent with the measurements 40 for GeTe alloys and with those in many recent reports 47,69,70 The thermal conductivity is determined via κ = dC p D, where d is Table 1 Calculated band parameters for GeTe, PbTe and SnTe Thermoelectric performance of p-type GeTe J Li et al the density.…”

Section: Methodsmentioning

confidence: 99%

Electronic origin of the high thermoelectric performance of GeTe among the p-type group IV monotellurides

et al. 2017

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PbTe and SnTe in their p-type forms have long been considered high-performance thermoelectrics, and both of them largely rely on two valence bands (the first band at L point and the second one along the Σ line) participating in the transport properties. This work focuses on the thermoelectric transport properties inherent to p-type GeTe, a member of the group IV monotellurides that is relatively less studied. Approximately 50 GeTe samples have been synthesized with different carrier concentrations spanning from 1 to 20 × 10 20 cm − 3 , enabling an insightful understanding of the electronic transport and a full carrier concentration optimization for the thermoelectric performance. When all of these three monotellurides (PbTe, SnTe and GeTe) are fully optimized in their p-type forms, GeTe shows the highest thermoelectric figure of merit (zT up to 1.8). This is due to its superior electronic performance, originating from the highly degenerated Σ band at the band edge in the low-temperature rhombohedral phase and the smallest effective masses for both the L and Σ bands in the high-temperature cubic phase. The high thermoelectric performance of GeTe that is induced by its unique electronic structure not only provides a reference substance for understanding existing research on GeTe but also opens new possibilities for the further improvement of the thermoelectric performance of this material.

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“…In practical cases, the measurement geometry deviates from ideal measurement geometry that introduces errors in the experimental data. There are many earlier reports [8,17] on fabrication of instrument set-up for measuring the TE properties of bulk material. Martin et al [18] has reviewed different techniques and apparatus designs to address the uncertainty in Seebeck co-efficient measurement.…”

Section: Introductionmentioning

confidence: 99%