The isothermal crystal growth in Se 100−x Te x bulk glasses (x = 10, 20, and 30) was studied directly using infrared microscopy. The crystals grew spherulitically and linearly in the course of time, which is typical for crystal growth controlled by liquid-crystal interface kinetics. An operative growth model was found using a combination of growth and viscosity data, and using two different approaches for calculations of the Gibbs free energy change between the undercooled melt and crystalline phase. The study shows that the exact knowledge of the Gibbs free energy change calculated from both, heat capacities, and the simple approximation proposed by Turnbull, can provide comparable results regarding determination of an operative crystal growth model. A detailed discussion about the relationship between the kinetic coefficient of crystal growth rate and viscosity (u kin ∝ η −ξ ) is presented. Moreover, the activation energies of crystal growth were found to be higher than the activation energies of the overall crystallization process obtained by differential scanning calorimetry. The relation between these two quantities is considered under the experimental conditions.
■ INTRODUCTIONChalcogenide glasses and thin films are very interesting materials that exhibit unique physical properties. Because of their diverse active properties, chalcogenide materials can be used in various optical and optoelectronical devices or in various electronic thresholds and switches. 1−3 Interesting applications of chalcogenide materials also are found in modern high-tech memory devices. 4−6 Thermal stability and crystallization play a key role in processing and usage of the materials. In particular, the crystallization process needs to be considered from two points of viewin order to obtain an ideal glass the crystallization has to be prevented, and, on the other hand, the controlled amorphous-to-crystalline transformation is a fundamental process of considered technology (modern phase change materials, PCM). Thus, knowledge and understanding of crystal growth kinetics and nucleation in such materials are essential for their future applications. The crystallization studies 7−11 focus on evaluation of mechanism of crystal growth and nucleation, and on prediction of crystallization behavior in a wide temperature range. Such a description can be useful for tailoring and optimization of new high-tech materials as they provide a possibility to predict the crystallization behavior in similar materials by revealing the basic mechanisms and properties of the material.Selenium-based materials have been commercially applied in photoreceptors, photovoltaic materials, etc. 12 The properties of pure selenium can be significantly improved by alloying with other elements such as tellurium, germanium, antimony, arsenic, etc. Se−Te glasses and thin films are very attractive materials that exhibit an intermediate behavior between pure selenium and tellurium. The Se−Te mixtures exhibit numerous advantages in comparison with pure Se, for example, great...