Applicability of double Channel Technique in AlGaN/GaN HEMT for future biosensing applications

Arivazhagan, L.; Nirmal, D.; Jarndal, Anwar; Huq, Hasina F.; Chander, Subhash; Bhagyalakshmi, Sankaramangalam Balachandran; Reddy, P. Siva Kota; Ajayan, J.; Varghese, Arathy

doi:10.1016/j.spmi.2021.107086

Cited by 13 publications

(7 citation statements)

References 26 publications

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“…The presence of biomolecules is simulated by introducing different dielectric constants in the embedded cavities. The simulation was performed in the ideal case (cavity 100% fill rate of the biomolecules in the cavity), which is similar to the previous reports [30,31]. The dielectric constants of various neutral biomolecules used in this work are depicted in table 1 [32,33].…”

Section: Device Structure and Theoretical Modelmentioning

confidence: 98%

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The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

Liu,

Ma,

Guo

et al. 2023

J. Phys. D: Appl. Phys.

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The sensing performance of N-polar GaN/InAlN MOS-HEMT biosensors for neutral biomolecules was investigated and compared with the Ga-polar MOS-HEMT and N-polar T-gate HEMT by numerical simulation. The results indicate that the N-polar GaN/InAlN MOS-HEMT biosensor has higher sensing sensitivity than the Ga-polar MOS-HEMT and N-polar T-gate HEMT biosensors. Furtherly, to improve the sensing performance of N-polar MOS-HEMT, the influence of cavity dimensions, GaN channel layer thickness, and InAlN back barrier layer thickness on device performance was investigated. It is demonstrated that the sensitivity of the biosensor increases as the cavity height decreases and the cavity length increases. Therefore, the sensing performance of the N-polar MOS-HEMT device will be enhanced by thinning the GaN channel layer thickness or increasing the InAlN back barrier thickness, which can be mainly attributed to the variation of the energy band structure and 2DEG concentration in the HEMT heterostructure. Finally, the highest sensitivity can be obtained for the N-polar MOS-HEMT with 6-nm-thick GaN channel layer, 30-nm-thick InAlN back barrier layer, and two 0.9-μm-long and 5-nm-high cavities. This work provides structural optimal design guidance for the N-polar HEMT biosensor.

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Section: Device Structure and Theoretical Modelmentioning

confidence: 98%

“…The representation of biomolecules with different dielectric constants was suggested by Arivazhagan et al [30]. The absence of target biomolecules from the embedded cavity region means the cavity is filled with air which has a dielectric constant K = 1.…”

Section: Device Structure and Theoretical Modelmentioning

confidence: 99%

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

Liu,

Ma,

Guo

et al. 2023

J. Phys. D: Appl. Phys.

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“…In this work, the source - drain contacts were characterized with work function (WF)−4 eV, equivalent to Ti/Al/Ni/Au stackWF. The Schottky type gate is represented with WF5.15 eV, corresponding to WFof Ni/Au [22].…”

Section: Device and Simulation Approachmentioning

confidence: 99%

“…In addition to the aforementioned advantages, double-channel HEMTs offer higher mobility owing to a wider distribution of carrier concentration, resulting in an enhanced response to changes [11]. It has been reported that DCHEMT enhances sensitivity from 62% to 136% for given biomarker and investigation conditions compared with singlechannel HEMT [22]. The enhancement of electrostatic performance is attributed to two factors: the presence of two high carrier concentration channels and the upper-to-lower channel coupling.…”

Section: Introductionmentioning

confidence: 99%

Deep insight of inter-channel coupling in AlGaN/GaN double channel HEMT and its application in C-ERB2 sensing

Kanrar,

Sarkar

2024

Phys. Scr.

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AlGaN/GaN Double Channel High Electron Mobility Transistors (DCHEMTs) have emerged as promising biosensors, leveraging the unique properties of inter-channel coupling. This paper investigates the influence of mole fraction variations in the AlGaN layer on inter-channel coupling and explores its implications for C-ERB2 biosensing. The study reveals the potential of inter-channel coupling to enhance sensitivity in biosensing applications, particularly for detecting C-ERB2, a crucial protein associated with various cancers. The device architecture, simulation models, electrostatics, and sensitivity analysis are comprehensively examined. The findings underscore the significance of inter-channel coupling in optimizing biosensor performance, offering valuable insights for the advancement of biosensing technologies.

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“…Various design improvements have been developed in recent years to overcome the limitations of these heterojunction-based HEMTs as biosensors in order to achieve their optimum potential. These structural design improvements and advancements were thoroughly investigated to determine which could provide better stability and sensitivity to the biosensor [ 29 , 30 , 31 ].…”

Section: Introductionmentioning

confidence: 99%

Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors

et al. 2023

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High electron mobility transistor (HEMT) biosensors hold great potential for realizing label-free, real-time, and direct detection. Owing to their unique properties of two-dimensional electron gas (2DEG), HEMT biosensors have the ability to amplify current changes pertinent to potential changes with the introduction of any biomolecules, making them highly surface charge sensitive. This review discusses the recent advances in the use of AlGaN/GaN and AlGaAs/GaAs HEMT as biosensors in the context of different gate architectures. We describe the fundamental mechanisms underlying their operational functions, giving insight into crucial experiments as well as the necessary analysis and validation of data. Surface functionalization and biorecognition integrated into the HEMT gate structures, including self-assembly strategies, are also presented in this review, with relevant and promising applications discussed for ultra-sensitive biosensors. Obstacles and opportunities for possible optimization are also surveyed. Conclusively, future prospects for further development and applications are discussed. This review is instructive for researchers who are new to this field as well as being informative for those who work in related fields.

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Applicability of double Channel Technique in AlGaN/GaN HEMT for future biosensing applications

Cited by 13 publications

References 26 publications

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

The study of N-polar GaN/InAlN MOS-HEMT and T-gate HEMT biosensors

Deep insight of inter-channel coupling in AlGaN/GaN double channel HEMT and its application in C-ERB2 sensing

Status and Prospects of Heterojunction-Based HEMT for Next-Generation Biosensors

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