Application of a flexible memristor in self-color electronics and its depth mechanism analysis

In-Depth Investigation of the Mechanism of Dehydration-Induced Phase Transformation from Nb3O7(OH) to H-Nb2O5: A Theoretical and Experimental Approach

“…The red shift of SPV onset under positive bias is mainly affected by the high density of surface states, including tail states, resulting from its small crystal size and disorder of octahedral NbO 6 . 37 As a negative bias is applied, the SPV signal intensity of Nb 3 O 7 (OH)-M became weaker first and took a reversal (Figure 6d 2 ). The SPV inversion further illustrates the weak built-in field due to many defects in Nb 3 O 7 (OH)-M. The photoinduced charge transfer paths in the three H-Nb 2 O 5 samples are proposed in Figure 6e,f.…”

“…Figure d 1 shows that the SPV onset for the Nb 3 O 7 (OH)-M presented a red shift and the intensity of SPV signal became stronger under positive bias. The red shift of SPV onset under positive bias is mainly affected by the high density of surface states, including tail states, resulting from its small crystal size and disorder of octahedral NbO 6 . As a negative bias is applied, the SPV signal intensity of Nb 3 O 7 (OH)-M became weaker first and took a reversal (Figure d 2 ).…”

Transmission Mechanism and Logical Operation of Graphene-Doped Poly(vinyl alcohol) Composite-Based Memristor

“…Comparisons with other representative polymer-based and 2D memristors are presented in Table S1. The resistive switching window of the device is sufficient for data storage and logic operations in the information technology field. , …”

“…The resistive switching window of the device is sufficient for data storage and logic operations in the information technology field. 33,34 When HRS is defined as logic "0" and LRS is defined as logic "1", memristor devices can be used for logic operations and information storage. 35 As shown in Figure 3a, the polarity of the memristor device is indicated by a thick black line.…”

Oxygen-Vacancy-Mediated Large Binding Energy Exciton Dissociation in Nb3O7(OH) Nanorods with High Electron Mobility for CO2 Photoreduction

“…The prominent SPV peaks mainly arise from the electron transition from the valence band to the conduction band, specifically, from O 2p orbital to Nb 4d orbital, based on the band structure of Nb 3 O 7 (OH). Additionally, when the positive bias was applied, the threshold of photovoltage response was extended to longer wavelength. , This phenomenon suggests that the defects (such as OH groups, surface states, or bulk oxygen vacancies) in Nb 3 O 7 (OH) form a series of interfacial states with an energy distribution within the band gap, located close to the bottom of the conduction band. Some of the interfacial states can be occupied by electrons, which actually affects the carrier transport.…”