Application of a Nonlinear Drift Memristor Model in Analogue Reconfigurable Devices

Mladenov, Valeri; Zaykov, Ivan; Kirilov, Stoyan

doi:10.1109/ieeeconf55059.2022.9810389

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Cited by 3 publications

References 16 publications

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Application of New Metal-Oxide Memristor Models in Digital and Analog Electronic Circuits

Kirilov,

Mladenov

2023

2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (

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Application of New Metal-Oxide Memristor Models in Digital and Analog Electronic Circuits

Kirilov,

Mladenov

2023

2023 19th International Conference on Synthesis, Modeling, Analysis and Simulation Methods and Applications to Circuit Design (

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On a Hypothetical Model with Second Kind Chebyshev’s Polynomial–Correction: Type of Limit Cycles, Simulations, and Possible Applications

Kyurkchiev

Илиев

2022

Algorithms

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In this article, we explore a new extended Lienard-type planar system with “corrections” of the second kind Chebyshev’s polynomial Un. The number and type of limit cycles are also studied. The discussion on the y(t)—component of the solution of the Lienard system is connected to searching for the solution of the synthesis of filters and electrical circuits. Numerical experiments, depicting our outcomes using CAS MATHEMATICA, are presented.

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Application of Metal Oxide Memristor Models in Logic Gates

Mladenov

2023

Electronics

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Memristors, as new electronic elements, have been under rigorous study in recent years, owing to their good memory and switching properties, low power consumption, nano-dimensions and a good compatibility to present integrated circuits, related to their promising applications in electronic circuits and chips. The main purpose of this paper is the application and analysis of the operations of metal–oxide memristors in logic gates and complex schemes, using several standard and modified memristor models and a comparison between their behavior in LTSPICE at a hard-switching, paying attention to their fast operation and switching properties. Several basic logic gates—OR, AND, NOR, NAND, XOR, based on memristors and CMOS transistors are considered. The logic schemes based on memristors are applicable in electronic circuits with artificial intelligence. They are analyzed in LTSPICE for pulse signals and a hard-switching functioning of the memristors. The analyses confirm the proper, fast operation and good switching properties of the considered modified memristor models in logical circuits, compared to several standard models. The modified models are compared to several classical models, according to some significant criteria such as operating frequency, simulation time, accuracy, complexity and switching properties. Based on the basic memristor logic gates, a more complex logic scheme is analyzed.

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Application of a Nonlinear Drift Memristor Model in Analogue Reconfigurable Devices

Cited by 3 publications

References 16 publications

Application of New Metal-Oxide Memristor Models in Digital and Analog Electronic Circuits

Application of New Metal-Oxide Memristor Models in Digital and Analog Electronic Circuits

On a Hypothetical Model with Second Kind Chebyshev’s Polynomial–Correction: Type of Limit Cycles, Simulations, and Possible Applications

Application of Metal Oxide Memristor Models in Logic Gates

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