Application of Ag-Cu-Ti active metal composite filler in ceramic joining: a review

Li, Yuhang; Wang, Jun; Shen, Ziyan; Qian, Hangli; Zhang, Wanliang; Zhang, Kaiyu; Ying, Danqing; Zhou, Qihang; Zhou, Chengshuang; Zhang, Lin

doi:10.1007/s11706-023-0664-6

Front. Mater. Sci.

2023

DOI: 10.1007/s11706-023-0664-6

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Application of Ag-Cu-Ti active metal composite filler in ceramic joining: a review

Yuhang Li,

Jun Wang,

Ziyan Shen

et al.

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2024

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Cited by 2 publications

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Effect of different joining temperatures on IN600/SiC brazed joints

Wei

2024

Mater. Res. Express

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IN600 superalloy and SiC ceramics has been conducted using an active AgCuTi filler, and the composite joints were characterized using scanning electron microscopy coupled with energy-dispersive X-ray spectrometry (SEM–EDS). The results demonstrate successful joining by carefully selecting brazing temperatures and holding times to produce high-integrity joints. The interfacial microanalysis revealed the formation of TiC and Ti5Si3 near the SiC side due to the reaction between titanium, carbon, and silicon. On the IN600 superalloy side, a Ti-Ni compound (TiNi3) was formed as a result of titanium reacting with nickel. The typical microstructure of the brazing joint interface includes: TiC+TiNi3, TiC, Cu(s,s)+Ag(s,s) and TiC+Ti5Si3. Furthermore, the shear strength evaluation of the joints was also conducted at ambient temperatures using a shear test. The experimental findings showed that the sample exhibited the highest shear strength (38 MPa) when subjected to brazing at 910 ℃ for 10 min. Fracture occurred at the interface between the base material and AgCuTi filler at higher brazing temperature (930 ℃).

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Effect of different joining temperatures on IN600/SiC brazed joints

Wei

2024

Mater. Res. Express

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Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

Janabi,

Shillaber,

Ying

et al. 2024

IEEE Trans. Power Electron.

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This paper proposes a new power electronic packaging for discrete dies, namely Standard Cell which consists of a step-etched active metal brazed (AMB) substrate and a flexible printed circuit board (flex-PCB). The standard cell exhibits high thermal conductivity, complete electrical insulation, and low stray inductance, thereby enhancing the performance of SiC MOSFET devices. The standard cell has a stray power loop inductance of less than 1 nH and a gate loop inductance of less than 1.5 nH.The standard cell has a flat body with surface-mounting electrical connections on one side and direct thermal connections on the other. The use of flex-PCB die interconnection enables maximum utilization of source pads while providing a flexible gate-source connection and the converter PCB. This paper presents the design concept of the standard cell and experimentally validates its effectiveness in a converter system.

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Application of Ag-Cu-Ti active metal composite filler in ceramic joining: a review

Cited by 2 publications

References 117 publications

Effect of different joining temperatures on IN600/SiC brazed joints

Effect of different joining temperatures on IN600/SiC brazed joints

Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets

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