Application of CdZnTe Quasi-Hemispherical Detectors in Strong Gamma-Radiation Fields

Loutchanski, A.; Fjodorovs, V.; Іванов, В.І.; Ogorodniks, V.

doi:10.1051/epjconf/202022507004

Cited by 6 publications

(6 citation statements)

References 6 publications

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Among all the electrode geometries, the quasi-hemispherical [11][12][13][14] configuration allows to collect charges over large detector volumes (up to 4 cm 3 ) with a single readout channel. Quasi Hemispherical Detectors (QHDs) do not need Pulse Shaping Analysis algorithm, as opposed to coplanar and VFG, and their state-of-the-art performances are achieved by using the raw spectrum only.

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mentioning

confidence: 99%

Optimization of quasi-hemispherical CdZnTe detectors by means of first principles simulation

Vicini

Zanettini²,

Amadé³

et al. 2023

Sci Rep

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In this paper we present the development of quasi-hemispherical gamma-ray detectors based on CdZnTe. Among the possible single-polarity electrode configurations, such as coplanar, pixelated, or virtual Frisch-grid geometries, quasi-hemispherical detectors are the most cost-effective alternative with comparable raw energy resolution in the high and low energy range. The optimal configuration of the sensor in terms of dimension of the crystals and electrode specifications has been first determined by simulations, and successively validated with experimental measures. Spectra from different sources have been acquired to evaluate the detectors performances. Three types of detectors with different CZT volumes have been fabricated, namely 10 × 10 × 5 mm3, 15 × 15 × 10 mm3 and 20 × 20 × 10 mm3. In the case of 10 × 10 × 5 mm3 crystals, the optimum pixel size determined by our simulation tool was confirmed by experiments: the best spectroscopic resolution of 1.3% at 662 keV has been found for a 750 μm diameter pixel detector. The best energy resolution values obtained for the 15 × 15 × 10 mm3 and 20 × 20 × 10 mm3 detectors were respectively 1.7% and 2.7% at 662 keV.

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“…

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mentioning

confidence: 99%

Optimization of quasi-hemispherical CdZnTe detectors by means of first principles simulation

Vicini

Zanettini²,

Amadé³

et al. 2023

Sci Rep

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show abstract

“…The effect of IR illumination on the characteristics of the output pulses of the quasi-hemispherical detector obtained under alpha-particle irradiation was investigated. As shown in [ 36 ], IR illumination has a significant impact on the characteristics of quasi-hemispherical detectors. We studied in more detail the processes occurring in quasi-hemispherical detectors under the influence of IR radiation to clarify the features of charge-carrier collection in them in comparison with CZT detectors of other types.…”

Section: Resultsmentioning

confidence: 99%

“…Temperature [ 16 , 17 , 18 ], high radiation fluxes [ 19 , 20 , 21 ], above-bandgap [ 22 , 23 ] and sub-bandgap [ 24 , 25 , 26 , 27 , 28 , 29 , 30 , 31 , 32 , 33 , 34 , 35 , 36 ] illuminations and other external influences can have both negative and positive effects on the performance of the detectors. Our investigations are focused on the influence of sub-bandgap near-infrared illumination (IR) on the performance of quasi-hemispherical detectors.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of the Influence of Infrared Illumination on the Pulse Shapes of Output Signals of CdZnTe Detectors

Ivanov,

Fjodorovs,

Hinoverovs

et al. 2023

Sensors

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The spectrometric characteristics of CdZnTe detectors are largely determined by the nonuniformity of the material and the influence of the negative polarization effects associated with the formation of space charges in the sensitive volume of the detector. They change the electric field distribution in the detector and affect the efficiency of the charge carrier collection. An analysis of the waveforms of the output pulses was used to investigate the uniformity of the charge collection and electric field distribution in the detectors when irradiated by the alpha particles. The influence of infrared (IR) illumination on these parameters was evaluated. IR illumination had no positive effect on the planar detector but greatly improved the charge collection in quasi-hemispherical detectors in the peripheral (corner) regions. The output pulse amplitude increased, and the rise time notably decreased. Polarization that occurred predominantly in the corner regions at low temperatures (from −30 °C to −20 °C) was eliminated using IR illumination.

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“…Attempts to use IR illumination to improve the characteristics of different types of CZT detectors have been described in [14][15][16][17]. In [18,19], it was shown that the correctly chosen intensity and wavelength of IR illumination could significantly affect the characteristics of CZT quasi-hemispherical detectors operating at high-radiation fluxes.…”

Section: Introductionmentioning

confidence: 99%

Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes

Ivanov,

Fjodorovs,

Loutchanski

et al. 2023

Sensors

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This article discusses the possibilities and limitations of CdZnTe (CZT) quasi-hemispherical detectors operating over a wide temperature range and at high-gamma radiation fluxes. The results of the negative influence of low- and high-operating temperatures, as well as high-radiation fluxes on spectrometric characteristics of CZT detectors and possible ways to eliminate performance deterioration, are presented. The impact of infrared (IR) illumination parameters, such as wavelength and irradiation intensity on the spectroscopy performance of detectors, was investigated. A correctly chosen IR illumination wavelength and intensity were shown to significantly improve the energy resolution of CZT quasi-hemispherical detectors, allowing their stable operation in high-gamma radiation fluxes and extend the operating temperature range toward low temperatures. The influences of bias voltage values and temperatures on the quasi-hemispherical CZT detectors’ operating ability at high-gamma radiation fluxes were studied.

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Application of CdZnTe Quasi-Hemispherical Detectors in Strong Gamma-Radiation Fields

Cited by 6 publications

References 6 publications

Optimization of quasi-hemispherical CdZnTe detectors by means of first principles simulation

Optimization of quasi-hemispherical CdZnTe detectors by means of first principles simulation

Investigation of the Influence of Infrared Illumination on the Pulse Shapes of Output Signals of CdZnTe Detectors

Use of CdZnTe Quasi-Hemispherical Detectors under the Impact of Low Temperatures and High-Gamma Radiation Fluxes

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