Application of Conformal Mapping Approximation Techniques: Parallel Conductors of Finite Dimensions

Pesonen, Nadine; Kahn, W.K.; Allen, Richard A.; Cresswell, Michael W.; Zaghloul, Mona

doi:10.1109/tim.2004.827065

Cited by 19 publications

(11 citation statements)

References 1 publication

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“…The conformal-mapping method is most helpful for fringing electric fields in simple two-dimensional boundary problems (which is just our case) by transforming the boundary to a soluble form [20]. A series of simulations (described below) allow us to conclude that for the C ox (x) consideration a simplified structure can be used.…”

Section: A Local Oxide Capacitancementioning

confidence: 99%

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Analysis of the threshold voltage turn-around effect in high-voltage n-MOSFETs due to hot-carrier stress

Starkov

Enichlmair

Tyaginov

2012

2012 IEEE International Reliability Physics Symposium (IRPS)

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The turn-around effect of the threshold voltage shift during hot-carrier stress has been investigated. Such a phenomenon is explained by the interplay between interface states and oxide traps, i.e. by the compensation of the rapidly created oxide charges by the more slowly created interface states. To prove this idea, a refined extraction scheme for the defect distribution from charge-pumping measurements has been employed. The obtained results are in a good agreement with the findings of our physics-based model of hot-carrier degradation. This approach considers not only damage produced by channel electrons but also by secondary generated channel holes. Although the contribution of the holes to the total defect creation is smaller compared to that of electrons, their impact on the threshold voltage shift is comparable with the electronic contribution. The reason behind this trend is that hole-induced traps are shifted towards the source, thereby more severely affecting the device behavior.

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Section: A Local Oxide Capacitancementioning

confidence: 99%

“…4 and reduces the original problem to the Laplace problem between two parallel infinitely long metallic plates at different potentials [20]. The local oxide capacitance is then defined as the ratio between the interface charge density and the interface potential and can be written as [19] x…”

Section: A Local Oxide Capacitancementioning

confidence: 99%

Analysis of the threshold voltage turn-around effect in high-voltage n-MOSFETs due to hot-carrier stress

Starkov

Enichlmair

Tyaginov

2012

2012 IEEE International Reliability Physics Symposium (IRPS)

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“…7 A series of simulations based on the Lee et al approach 3 (described below) allow us to come to a conclusion that for a local oxide capacitance consideration a simplified structure can be used. 7 A series of simulations based on the Lee et al approach 3 (described below) allow us to come to a conclusion that for a local oxide capacitance consideration a simplified structure can be used.…”

Section: Conformal-mapping Methodsmentioning

confidence: 99%

Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel n-MOSFETs

Starkov

Enichlmair

2013

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inHole injection-reduced hot carrier degradation in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric Appl. Phys. Lett. 102, 073507 (2013); 10.1063/1.4791676 Processing dependences of channel hot-carrier degradation on strained-Si p -channel metal-oxide semiconductor field-effect transistors J. Vac. Sci. Technol. B 29, 01AB07 (2011); 10.1116/1.3523396 1/f noise in n-channel metal-oxide-semiconductor field-effect transistors under different hot-carrier stresses Hot-carrier effects on the scattering parameters of lightly doped drain n -type metal-oxide-semiconductor field effect transistors J. Vac. Sci. Technol. B 16, 628 (1998); 10.1116/1.589873Hot-carrier effects on the scattering parameters of lightly doped drain n -type metal-oxide-semiconductor field effect transistor A theoretical model for the MOSFET local oxide capacitance as a crucial parameter for the characterization of hot-carrier degradation has been developed. For this purpose, the conformal mapping technique is used. On the basis of the proposed approach a refined extraction scheme for the defect distribution from charge-pumping measurements has been employed. Assuming the extracted spatial trap distributions at different stress times as input, the transfer characteristics and linear drain current degradation are numerically calculated and compared with the experimental results. A very good agreement is achieved. These results demonstrate that the coordinate dependence of the oxide capacitance is extremely important for an accurate extraction of the defect profile particularly for large stress times. Additionally, the obtained results confirm the findings of our physics-based model of hot-carrier degradation.

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“…The signal line width which influences leakage field is changed according to the aperture width ( ) and substrate height (ℎ). Points A and J are determined by line of flux departing from Points C and H, respectively [14]. The signal line width influencing leakage field is determined by the following relations:…”

Section: Analysis Of the Characteristic Impedance Of The Transitionmentioning

confidence: 99%

A New Design Method for Ultrawideband Microstrip-to-Suspended Stripline Transitions

Kim¹,

Kim

2013

International Journal of Antennas and Propagation

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A clear and efficient design method for ultra-wideband microstrip-to-suspended stripline transition, which is based on the analytical expressions of the whole transitional structure, is presented. The conformal mapping is applied to obtain the characteristic impedance of the transitional structure within 2.85% accuracy as compared with the EM-simulation results. The transition is designed to provide broadband impedance matching and smooth field conversion. The implemented transition performs less than 0.6 dB insertion loss per transition for frequencies up to 30 GHz.

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Application of Conformal Mapping Approximation Techniques: Parallel Conductors of Finite Dimensions

Cited by 19 publications

References 1 publication

Analysis of the threshold voltage turn-around effect in high-voltage n-MOSFETs due to hot-carrier stress

Analysis of the threshold voltage turn-around effect in high-voltage n-MOSFETs due to hot-carrier stress

Local oxide capacitance as a crucial parameter for characterization of hot-carrier degradation in long-channel n-MOSFETs

A New Design Method for Ultrawideband Microstrip-to-Suspended Stripline Transitions

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