Application of conversion coatings to the growth of TTF–TCNQ thin films by CVD and conducting nanowires by dipping process

de, Dominique; Sakah, Jamal; Basso-Bert, Mario; Faulmann, Christophe; Legros, Jean-Pierre; Ondarçuhu, Thierry; Joachim, Christian; Aries, L.; Valade, Lydie; Cassoux, P.

doi:10.1016/s1387-1609(00)01152-x

Cited by 12 publications

(17 citation statements)

References 19 publications

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“…SSCCs preparation follows a controlled oxidation method already described (10,14). SiCC and SiMR surfaces are prepared by procedures similar to that used for SSCC (15).…”

Section: Methodsmentioning

confidence: 99%

“…Previous, non-exhaustive, examples of reports on thin-film preparation of molecule-based materials include the use of Langmuir-Blodgett (1), high vacuum evaporation (2-4), electrochemical deposition (5), molecular beam deposition (6), CVD (7,8), and reticulate doping (9) techniques. We recently reported the preparation of TTF Á TCNQ (TTF = tetrathiafulvalene, TCNQ = tetracyanoquinodimethane) thin films and nanowires using stainless-steel conversion coatings (SSCCs) substrates (10). We could evidence the interest of using such substrates in terms of surface coverage, adhesion, and nanowires growth when performing CVD and dipping process.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

TTF[Ni(dmit)2]2: Now as Thin Films and Nanowires

Valade

Casellas

Roques

et al. 2002

Journal of Solid State Chemistry

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“…SSCCs preparation follows a controlled oxidation method already described (10,14). SiCC and SiMR surfaces are prepared by procedures similar to that used for SSCC (15).…”

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

TTF[Ni(dmit)2]2: Now as Thin Films and Nanowires

Valade

Casellas

Roques

et al. 2002

Journal of Solid State Chemistry

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“…[36,37] In such cases, and opposite to metal or ceramic deposition, decomposition of the precursors is not the basis of material formation, and should be avoided. Therefore, the substrate temperature is generally set lower than the vaporization temperature.…”

Section: Ligand Role In Omcvdmentioning

confidence: 99%

Ligand Influence on Connectivity and Processing: Magnetic Crystals Based on Metalloceniums and Films of TCNE‐Based Magnets (TCNE=Tetracyanoethylene)

Faulmann

Valade

2007

Chemistry A European J

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Molecular materials built from coordination complexes exhibit properties that can be explained through intermolecular electronic interactions driven by the ligand moieties. The nature of the ligand in the precursor molecules governs the connectivity of the magnetic phases and the possibility of producing them by using a gas-phase process. Metallocenium, metal bisdithiolate materials, and solvated and solvent-free [M(tcne)2] (tcne=tetracyanoethylene) magnets illustrate such features.

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“…Its conductivity at room temperature (s RT = 600 S cm À1 ) is the highest along the needle axis which corresponds to the molecular stacking direction. 1 TTFÁTCNQ was prepared and studied in numerous forms such as single crystals, 1 crystalline powders, 2 thin films, 3,4 molecular wires, 5,6 and, more recently, nanoparticles (NPs) through the addition of a growth controller to the reaction medium. 7,8 TTFÁTCNQ NPs were isolated by using (i) stearic or octanoic acid, (ii) butyl-, octyl-or hexadecyl-amine, (iii) 1-butyl-3-methylimidazolium salts 9 ([BMIM]X with X = BF 4 À or [N(CF 3 SO 2 ) 2 ] À ) or (iv) poly(vinylpyrrolidone).…”

Section: Introductionmentioning

confidence: 99%