Application of deposited by ALD HfO2 and Al2O3 layers in double-gate dielectric stacks for non-volatile semiconductor memory (NVSM) devices

Reactive magnetron sputtered hafnium oxide layers for nonvolatile semiconductor memory devices

“…3,4 Undoubtedly, hafnium oxide or oxynitride layers are the most commonly investigated high-k dielectrics that already have found applications in nowadays semiconductor devices, such as: a gate dielectric in metal-oxide-semiconductor field-effect transistors (MOSFETs) devices, 5 resistive random access memories, 6 for improvement of NVSM devices properties. 7,8 Moreover, they can also be used as a passivation layer in devices dedicated for special applications such as high temperature and high power electronics based on silicon carbide (SiC) 9,10 or InGaAs/InP heterostructure bipolar transistors. 11 Hafnium oxide is also one of the functional layers in gas sensors, in particular, CO 2 (Ref.…”

Investigations of Structural and Electrical Properties of ALD Films Formed with the Ozone Precursor

“…This feature makes ALD suitable for use in electronic and photonic devices based on transparent and flexible substrates, including polymers or hybrid structures with organic or low-dimensional materials [ 3 , 4 , 5 ]. Furthermore, ALD is commonly used for the fabrication of high- k dielectrics, transparent conductive oxides (TCOs), or conductive materials as gate-dielectrics in metal-oxide-semiconductor (MOS) devices [ 6 , 7 ], materials for non-volatile memory (NVSM) structures [ 8 , 9 ], optical coatings in lasers or light-emitting devices (LEDs) [ 10 , 11 ], membranes [ 12 ], sensing devices [ 13 ], waveguides [ 14 ], or photovoltaics [ 15 , 16 ].…”

Tunneling oxide engineering for improving retention in nonvolatile charge-trapping memory with TaN/Al2O3/HfO2/SiO2/Al2O3/SiO2/Si structure

“…16,17) Although lots of investigations have been performed to enhance the initial threshold voltage window of HfO 2 -based CTM by Al doping or stacking with Al 2 O 3 , the improvement of retention characteristics has not been widely studied. [18][19][20][21][22][23] Furthermore, memory devices with low power consumption have been broadly investigated as the portable device market increases. [24][25][26][27][28][29][30][31] Since tunnel FETs (TFETs) derive current by band-to-band tunneling (BTBT) instead of thermionic emission, TFETs can reduce power consumption compared to conventional MOSFETs and have advantages for portable devices and synaptic devices.…”