Application of electro optical frequency mapping (EOFM) in scan chain failure analysis for ASIC

Sheng, Foo Loke; Ling, Leow Jack

doi:10.1109/ipfa.2017.8060220

Cited by 1 publication

(2 citation statements)

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“…where R V p is the reflectivity of the DUT, P inc and P out are, respectively, the incident and reflected laser powers, R 0 is the static reflectivity of the DUT without power, and ∆R(V p ) is the change in reflectivity due to the external voltage on the DUT, namely the EOFM signal of the DUT. Equation (3) shows that the EOFM signal of the DUT is essentially caused by the variation of the reflectivity of the DUT with the applied voltage. Therefore, we only need to build a physical model to calculate the reflectivity of the DUT, and then the corresponding EOFM signal values of the DUT under different voltages can be obtained using the proposed model.…”

Section: Theoretical Modelmentioning

confidence: 99%

“…The Electro-Optical Frequency Mapping (EOFM) technique, an optical contactless probing, is undeniably powerful in the integrated circuit (IC) failure analysis realm, owing to the applications in distinguishing transistor toggling at a specific frequency through the backside of silicon ICs and reducing electrical failure analysis time [1][2][3][4]. Recently, EOFM has also been treated as a new class of physical attack that is fast becoming a key instrument in the hardware security community [5,6].…”

Section: Introductionmentioning

confidence: 99%

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Preliminary Study on Detecting the Internal Voltage Values of Integrated Circuits Based on Electro-Optical Frequency Mapping

Liu

Han

2022

Applied Sciences

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Electro-optical frequency mapping (EOFM) technology can detect node signals from the backside of integrated circuits (ICs). In the past, the detected signal only qualitatively represented the electrical activity strength inside the device. In this paper, the electro-optical signal generation mechanism of the device is systematically studied, and a concise physical model of laser beam modulation based on the optical transmission matrix is proposed. Firstly, the influence of the bandwidth of the laser and each structure covered by the laser spot on the electro-optical signal of the device is well described by the model. Secondly, the model quantifies the electro-optical signal strength, and shows it is positively correlated with the laser wavelength and the reverse bias voltage. Finally, the model is used to quantitatively calculate the accurate voltage level of the internal node inside the device using the detected signal, and the calculation results match well with the experimental results. The model provides theoretical guidance for the efficient and accurate extraction of internal voltage values of devices by EOFM technology.

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Section: Theoretical Modelmentioning

confidence: 99%