Application of Field-Enhanced Rapid Thermal Annealing to Activation of Doped Polycrystalline Si Thin Films

Abstract

Activation of polycrystalline silicon (poly-Si) thin films doped as n-type using selective ion implantation of phosphorous was performed employing field-enhanced rapid thermal annealing where rapid thermal annealing of halogen lamps is combined with alternating magnetic fields. The ion activation was evaluated using Hall effect measurements incorporating the resistivity, the charge carrier concentration, and the mobility. Statistical design of experiments is attempted in order to clarify the effects and interactions of processes variables on field-enhanced rapid thermal annealing towards ion activation: the three processing variables are furnace temperature, power of halogen lamp, and the alternating magnetic field. Hall effect measurements indicate that the furnace temperature and RTA power are found to be dominant in activating the doped polycrystalline Si in dose. The activation process results from the competition between charge carrier concentration and mobility: the increase in mobility is larger than the decrease in charge carrier concentration.

Asymmetric source/drain offset structure for reduced leakage current in polycrystalline‐silicon thin‐film transistors

“…Recently, alternating magneticfield-enhanced rapid thermal annealing (AMFERTA) on a glass substrate has been reported. [6][7][8] A detailed explanation of the AMFERTA method was provided in our previous work, 8 which successfully lowered crystallization temperature as well as reduced the process time. However, when the drain bias (V DS ) of AMFERTA poly-Si TFT is 10.1 V, the off-state drain current (leakage current) is above 10 -11 A, which is too large to use as a pixel TFT in an AMOLED display.…”

The characteristics of solid phase crystallized (SPC) polycrystalline silicon thin film transistors employing amorphous silicon process

“…There were considerable numbers of reports on decreasing the crystallization temperature and shortening the crystallization time [6,7]. Recently, results of FESPC on the glass substrate have been reported [8,9]. The FESPC employs field-enhanced rapid thermal annealing where rapid thermal annealing by halogen lamps is combined with alternating magnetic fields.…”

The Characteristics of New n-Type Polycrystalline Silicon Thin-Film Transistors Employing Alternating Magnetic-Field-Enhanced Rapid Thermal Annealing

“…However, the heat treatment of the SPC requires a high temperature above 600 • C and a long annealing time (typically longer than 10 h), which prevent its use on a thermally susceptible glass substrate [3], [4]. Recently, the results of alternating magnetic-field-enhanced rapid Manuscript thermal annealing (AMFERTA) on a glass substrate have been reported [5], [6]. AMFERTA employs field-enhanced rapid thermal annealing in which the rapid thermal annealing induced by halogen lamps is combined with alternating magnetic fields.…”