Application of GeO<sub>2</sub> nanoparticle as electrically erasable memory and its photo catalytic behaviour

Seal, Mrinal; Bose, Navonil; Mukherjee, Sampad

doi:10.1088/2053-1591/aac66b

Cited by 9 publications

(4 citation statements)

References 46 publications

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“…It has been reported that GeO 2 glass generates various color centers under ultraviolet (UV) irradiation. In particular, the Ge-E ′ center is a typical color center originating from the oxygen vacancies initially existing in GeO 2 and through the generation of the electron-trapped germanium and hole-trapped oxygen pair [37,38]. It is believed that the latter mechanism is induced by UV irradiation at an energy higher than the GeO 2 bandgap and is accompanied by the dissociation of the Ge-O bond [39,40].…”

Section: Geo 2 Reduction Behaviormentioning

confidence: 99%

Solution-based coating and printing of polycrystalline Ge films using GeO₂ solution by moderate-pressure hydrogen plasma reduction

Ohmi¹,

Yasutake²,

Kakiuchi³

2021

Flex. Print. Electron.

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A printable-formation method for Ge films using a GeO 2 solution was developed in this study. The GeO 2 film was prepared by applying GeO 2 ink on a glass substrate and reducing it using high-pressure H 2 -based plasma. The crystallinity, electrical conductivity, and photosensitivity of the films were examined before and after the plasma treatment. The film transformed from amorphous GeO 2 to crystalline Ge after treatment with the H 2 -based plasma. The Ge film obtained after H 2 plasma reduction exhibited an electrical resistivity of 4000 Ω cm and a photosensitivity of 1.9 under AM 1.5G illumination of 100 mW cm −2 . In addition, the dependence of the reduction behavior of the GeO 2 film on the process parameters, such as the input power, substrate temperature, treatment time, and hydrogen concentration, were investigated systematically. The reduction of GeO 2 by H 2 plasma proceeded with an increase in the input power. The thickness of the reduced Ge film depended strongly on the substrate temperature, and the plasma reduction process required a low reduction temperature and short reaction time as compared to those of the thermal reduction process. The presence of only 4% H 2 gas in the process atmosphere played an important role in the reduction and crystallization of the Ge film, although pure He plasma could also reduce the GeO 2 film. Thus, we demonstrated the position-controlled preparation of Ge films using a commercial inkjet printer loaded with a GeO 2 ink solution.

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Section: Geo 2 Reduction Behaviormentioning

confidence: 99%

Solution-based coating and printing of polycrystalline Ge films using GeO₂ solution by moderate-pressure hydrogen plasma reduction

Ohmi¹,

Yasutake²,

Kakiuchi³

2021

Flex. Print. Electron.

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“…These types of germanium oxide were attractive materials such as both amorphous-form GeO x and crystalline-form GeO 2 owing to their optical and electrical properties. GeO 2 is used as a high-κ interlayer dielectric material and is useful in high-frequency applications because of its high carrier mobility. − In particular, GeO 2 can be used as a blocking layer with a reasonable band gap (5.81 eV) and a higher dielectric constant (κ ≈ 6) than SiO 2 (κ ≈ 3.9). , In addition, GeO 2 is commonly used in various applications such as electro-optical modulators, fiber optic materials, , nonlinear optics, , and piezoelectric glass materials and can be applied in batteries for rapid charging or discharging in lithium or sodium batteries. − GeO 2 nanoparticles can be used as memory devices or photocatalysts, and previous research has demonstrated the typical properties of the charge-storage effect of GeO 2 nanoparticles. − Amorphous GeO 2 is a good glass former and competitive with α-SiO 2 or amorphous boron oxide. , Furthermore, germanium is an attractive substitute for SiO 2 in metal-oxide-semiconductor field-effect transistors. − Germanium oxide-based electronic devices are of interest to researchers because of their broad range of applications. Additionally, hexagonal GeO 2 and amorphous GeO 2 possess water solubility, prompting research into their potential utilization in emerging applications such as secure elements and eco-friendly processes. ,, Consequently, the development of germanium oxides with tuned defects, vacancies, and high stoichiometries is necessary to increase their potential for various applications.…”

Section: Introductionmentioning

confidence: 99%

New Heteroleptic Germanium Precursors for GeO₂Thin Films by Atomic Layer Deposition

Choi,

Park,

Lee

et al. 2023

ACS Omega

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This study describes the synthesis of 12 new germanium complexes containing β-diketonate and/or N-alkoxy carboxamidate-type ligands as precursors for GeO 2 through atomic layer deposition (ALD). A series of Ge(β-diketonate)Cl complexes such as Ge(acac)Cl (1) and Ge(tmhd)Cl (2) were synthesized by using acetylacetone (acacH) and 2,2,6,6-tetramethyl-3,5-heptanedione (tmhdH). N-Alkoxy carboxamidate-type ligands such as N-methoxypropanamide (mpaH), N-methoxy-2,2dimethylpropanamide (mdpaH), N-ethoxy-2-methylpropanamide (empaH), N-ethoxy-2,2-dimethylpropanamide (edpaH), and N-methoxybenzamide (mbaH) were used to afford further substituted complexes Ge(acac)(mpa) (3), Ge(acac)(mdpa) (4), Ge(acac)(empa) (5), Ge(acac)(edpa) (6), Ge(acac)(mba) (7), Ge(tmhd)(mpa) (8), Ge(tmhd)(mdpa) (9), Ge(tmhd)(empa) (10), Ge(tmhd)(edpa) (11), and Ge(tmhd)-(mba) (12), respectively. Thermogravimetric analysis curves, which mostly exhibited single-step weight losses, were used to determine the evaporation properties of complexes 1−12. Interestingly, liquid complex 2 has no residue at 198 °C and therefore exhibits excellent vaporization properties and high volatility. Single-crystal X-ray diffraction studies of 1 and 7 demonstrated that the complexes had monomeric molecular structures with germanium chelated by the oxygen atoms of one or two bidentate ligands, respectively. An ALD process was developed for the growth of GeO 2 using Ge(tmhd)Cl (2) as a new precursor and H 2 O 2 as an oxidant. This study demonstrates the achievement of self-limiting growth of GeO 2 films by varying the duration of injection/purge, with an observed ALD window at deposition temperatures ranging from 300 to 350 °C. The saturated growth per cycle of the GeO 2 film was determined as 0.27 Å/ cycle at a deposition temperature of 300 °C. The deposited films were observed to be amorphous consisting of GeO 2 .

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“…Germanium oxide (GeOx) has shown great promise in various applications, such as catalysis, [24] lithium-ion batteries, [25,26] optical fibers, [27] solar cells, [28] and lightemitting diodes, [29] due to its high specific gravity, high volumetric capacity, excellent catalytic activity, and good electrochemical performance. [25] However, similar to other metal oxide HMSs (such as Fe 3 O 4 , [30] Ni 3 (VO 4 ) 2 , [31] and Nb 2 O 5 32 ), the synthesis of GeOx hollow frameworks usually requires surfactant-assisted hydrothermal methods, [33] bubble-assisted hydrothermal methods [34,35] or hard template-assisted calcination.…”

Section: Introductionmentioning

confidence: 99%

Denatured proteins show new vitality: Green synthesis of germanium oxide hollow microspheres with versatile functions by denaturing proteins around bubbles

et al. 2022

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The hollow structure has long attracted great attention because of its excellent properties. However, this special structure is usually synthesized through some complex approaches. Herein, we discovered that denatured bovine serum albumin (BSA) can trigger unusual biomineralization for the simple, green and shape‐controllable synthesis of germanium oxide (GeOx) hollow microsphere (HMS). At high temperature (60°C), BSA was denatured, and a compact BSA layer was formed around the H2 bubbles. The denatured BSA layer was stable and suitable for anchoring and growing GeOx. By simply changing the BSA concentration and temperature, various morphologies of GeOx could be obtained. Due to the denatured protein skeletons and microenvironment‐regulated collapse, GeOx HMS showed great potential for intelligently responsive pesticide delivery in the insect gut, showing superiority over traditional delivery systems, which early release pesticides in the mouth and stomach. Inspired by its large specific surface area, excellent biocompatibility, modifiable functional groups, and high electrocatalytic activity, GeOx HMS was also applied to versatile sensors for H2O2 assays at physiological pH and rapid coronavirus COVID‐19 detection. This work not only provides some evidence for understanding proteins in depth but also paves a new avenue for the biomineralization‐inspired synthesis of hollow structures with versatile functions.

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Application of GeO₂ nanoparticle as electrically erasable memory and its photo catalytic behaviour

Cited by 9 publications

References 46 publications

Solution-based coating and printing of polycrystalline Ge films using GeO₂ solution by moderate-pressure hydrogen plasma reduction

Solution-based coating and printing of polycrystalline Ge films using GeO₂ solution by moderate-pressure hydrogen plasma reduction

New Heteroleptic Germanium Precursors for GeO₂Thin Films by Atomic Layer Deposition

Denatured proteins show new vitality: Green synthesis of germanium oxide hollow microspheres with versatile functions by denaturing proteins around bubbles

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Application of GeO2 nanoparticle as electrically erasable memory and its photo catalytic behaviour

Cited by 9 publications

References 46 publications

Solution-based coating and printing of polycrystalline Ge films using GeO2 solution by moderate-pressure hydrogen plasma reduction

Solution-based coating and printing of polycrystalline Ge films using GeO2 solution by moderate-pressure hydrogen plasma reduction

New Heteroleptic Germanium Precursors for GeO2Thin Films by Atomic Layer Deposition

Denatured proteins show new vitality: Green synthesis of germanium oxide hollow microspheres with versatile functions by denaturing proteins around bubbles

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Application of GeO₂ nanoparticle as electrically erasable memory and its photo catalytic behaviour

Solution-based coating and printing of polycrystalline Ge films using GeO₂ solution by moderate-pressure hydrogen plasma reduction

Solution-based coating and printing of polycrystalline Ge films using GeO₂ solution by moderate-pressure hydrogen plasma reduction

New Heteroleptic Germanium Precursors for GeO₂Thin Films by Atomic Layer Deposition