Application of Graphene within Optoelectronic Devices and Transistors

Kusmartsev, F. V.; Wu, W. M.; Pierpoint, Michael P.; Yung, K. C.

doi:10.48550/arxiv.1406.0809

Cited by 1 publication

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“…Since its discovery, graphene has attracted lot of attention due to its the outstanding electronic properties, such as high mobility and ballistic transport at room temperature, mechanical flexibility, transparency and high thermal conductivity, contrasting to bulk material [1][2][3][4]. Furthermore, the discovery of graphene started a new research field dedicated to two-dimensional (2D) materials: in nature there are many layered materials that can be exfoliated to single-and few-layers [5].…”

Section: Introductionmentioning

confidence: 99%

In situ probing of the thermal treatment of h-BN towards exfoliation

et al. 2020

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Two-dimensional (2D) hexagonal boron nitride (h-BN) is becoming increasingly interesting for wider engineering applications. Thermal exfoliation is being suggested as a facile technology to produce large quantities of 2D h-BN. Further optimization of the process requires fundamental understanding of the exfoliation mechanism, which is hardly realized by ex situ techniques. In this study, in situ synchrotron x-ray powder diffraction experiments are conducted while heat treating bulk h-BN up to 1273 K. During the heating process, linear expansion of c-axis is observed and the contraction of a-axis up to around 750 K is consistent with previous research. However, a changing behavior from contraction to expansion in a-axis direction is newly observed when heating over 750 K. With the consideration of previous thermally oxidation studies, a hypothesis of thermal assisted exfoliation with oxygen interstitial and substitution of nitrogen at high temperature is proposed.

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