1997
DOI: 10.1117/12.277268
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Application of image-processing software to characterize the photomask key parameters for future technologies

Abstract: The intent of photomask metrology has always been to understand the relationship between the features on the photomask and the design data. This desire has been actuated by the necessity to close the loop between the photomask process steps and the wafer lithography. As the Si technology approaches 0.25 micron and beyond, and the employment of resolution enhancement techniques (OPC and phase shifting mask) to extend the capability of optical lithography, both the photomask critical dimension control and patter… Show more

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